Method for forming a layer provided with silicon

Abstract

A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500° C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600° C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.

1 . A method for forming a layer provided with silicon on a substrate, comprising:
 positioning a substrate within a processing chamber;   heating the substrate to a first temperature between 300° C. and 600° C.;   introducing a trisilane precursor into the processing chamber to deposit a first layer provided with silicon; and,   heating the substrate to a third temperature between about 600° C. and 1200° C. to anneal the first layer with silicon, wherein the first layer provided with silicon comprises epitaxial grains after heating the processing chamber to the third temperature.   
     
     
         2 . The method according to  claim 1 , wherein the first temperature is lower than 370° C. 
     
     
         3 . The method according to  claim 1 , wherein the first layer comprises more than 1 at % hydrogen when deposited. 
     
     
         4 . The method according to  claim 3 , wherein the first layer comprises more than 2 at % hydrogen when deposited. 
     
     
         5 . The method according to  claim 1 , wherein the first layer is substantially carbon free when deposited. 
     
     
         6 . The method according to  claim 1 , wherein the third temperature is between 610° C. and 800° C. 
     
     
         7 . The method according to  claim 6 , wherein the third temperature is between 620° C. and 700° C. 
     
     
         8 . The method according to  claim 1 , wherein the epitaxial grains have a length between 5 nm and 30 nm. 
     
     
         9 . The method according to  claim 8 , wherein the epitaxial grains have a length between 10 nm and 20 nm. 
     
     
         10 . The method according to  claim 1 , wherein the method further comprises providing a carbon comprising precursor to the processing chamber after heating the substrate to the third temperature. 
     
     
         11 . The method according to  claim 10 , wherein the carbon comprising precursor is an alkane. 
     
     
         12 . The method according to  claim 10 , wherein the first layer is doped with between 0.1% and 4% carbon. 
     
     
         13 . The method according to  claim 1 , wherein the first layer is amorphous. 
     
     
         14 . The method according to  claim 1 , further comprising:
 after depositing the first layer and before heating the substrate to a third temperature, heating the substrate to a second temperature between 400° C. and 600° C.; and,   after heating the substrate to the second temperature and before heating the substrate to a third temperature, introducing a second precursor into the processing chamber to deposit a second layer, wherein the second precursor has less silicon atoms than trisilane.   
     
     
         15 . The method according to  claim 14 , wherein the first layer has a thickness between 1 nm and 10 nm. 
     
     
         16 . The method according to  claim 14 , wherein the second precursor is silane. 
     
     
         17 . The method according to  claim 16 , wherein the second temperature is less than 480° C. 
     
     
         18 . The method according to  claim 14 , wherein the second layer has a thickness between 3 nm and 30 nm. 
     
     
         19 . The method according to  claim 14 , wherein the pressure during depositing the first and second layer is between 0.01 Torr and 100 Torr. 
     
     
         20 . The method according to  claim 14 , further comprising:
 after depositing the first layer and before introducing the second precursor, providing an etchant to the substrate.