Inventor · disambiguated record
Wei-Hao Wu
Also filed as: WU WEI · Wu wei-hao
80 granted patents·17 pending applications·3,526 citations·filing 2008–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD84TAIWAN SEMICONDUCTOR MFG3CENTER FOR EXCELLENCE IN MOLECULAR CELL SCIENCE CHINESE ACAD OF SCIENCES2NATIONAL UNIV OF DEFENSE TECHNOLOGY2APPLIED MATERIALS INC1
Top patents by PatentIndex Score
97 records- 0198US11545400B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·4 cites·20 claims
- 0298US10490458B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·18 cites·20 claims
- 0398US10157790B1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·29 cites·20 claims
- 0498US9520482B1Method of cutting metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·3.2k cites·20 claims
- 0597US10861752B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·9 cites·20 claims
- 0697US8614127B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 24, 2013·41 cites·20 claims
- 0796US8497171B1FinFET method and structure with embedded underlying anti-punch through layerWu wei-hao·Filed 2012·Granted Jul 30, 2013·138 cites·20 claims
- 0895US9698261B2Vertical device architectureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 4, 2017·12 cites·20 claims
- 0994US11848326B2Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 19, 2023·2 cites·20 claims
- 1094US11626506B2Reducing pattern loading in the etch-back of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·2 cites·20 claims
- 1194US9564363B1Method of forming butted contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·12 cites·20 claims
- 1293US11791161B2Pattern fidelity enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·2 cites·20 claims
- 1393US10872891B2Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·5 cites·20 claims
- 1492US11217585B2Forming dielectric dummy fins with different heights in different regions of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 4, 2022·5 cites·20 claims
- 1592US10998421B2Reducing pattern loading in the etch-back of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 4, 2021·5 cites·19 claims
- 1692US10861698B2Pattern fidelity enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 8, 2020·5 cites·19 claims
- 1792US10388771B1Method and device for forming cut-metal-gate featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 20, 2019·5 cites·20 claims
- 1892US10269914B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·6 cites·20 claims
- 1991US12009253B2Semiconductor structure with staggered selective growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 11, 2024·2 cites·20 claims
- 2091US11264288B2Gate structure and patterning methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·4 cites·20 claims
- 2191US11152267B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 19, 2021·4 cites·20 claims
- 2291US11094556B2Method of manufacturing semiconductor devices using directional processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·4 cites·20 claims
- 2389US10763365B2Metal rail conductors for non-planar semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·3 cites·20 claims
- 2489US2025386593A1Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2588US10930763B2Method and device for forming metal gate electrodes for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·3 cites·20 claims
- 2687US9929245B2Semiconductor structures and methods for multi-level work functionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 27, 2018·4 cites·20 claims
- 2787US2025308892A1Pattern fidelity enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2887US2024371940A1Semiconductor device having dopant deactivation underneath gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2986US12453173B2Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 3086US10157985B2MOSFET with selective dopant deactivation underneath gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 18, 2018·3 cites·20 claims
- 3185US12334342B2Pattern fidelity enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 3285US11495687B2Metal rail conductors for non-planar semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·1 cites·20 claims
- 3385US9564431B2Semiconductor structures and methods for multi-level work functionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 7, 2017·6 cites·19 claims
- 3484US12230507B2Method of manufacturing semiconductor devices using directional processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 3584US11566836B2Device for isolating vibrationsNATIONAL UNIV OF DEFENSE TECHNOLOGY·Filed 2020·Granted Jan 31, 2023·3 cites·15 claims
- 3684US10840133B2Semiconductor structure with staggered selective growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·3 cites·20 claims
- 3784US10096706B2Vertical device architectureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 9, 2018·3 cites·20 claims
- 3883US12237418B2Liner for a bi-layer gate helmet and the fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·17 claims
- 3983US11037824B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 15, 2021·1 cites·20 claims
- 4083US2024322041A1Liner for a bi-layer gate helmet and the fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4182US12009410B2Semiconductor device and method fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 4281US12438043B2Semiconductor structure with staggered selective growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 4380US12205819B2Method and device for forming metal gate electrodes for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 4480US12034059B2Reducing pattern loading in the etch-back of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 4580US9960085B2Multiple patterning techniques for metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 1, 2018·3 cites·20 claims
- 4680US9200306B2Methods for production and purification of polypeptidesUNIV TSINGHUA·Filed 2013·Granted Dec 1, 2015·5 cites·34 claims
- 4779US10032759B2High-density semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 24, 2018·2 cites·20 claims
- 4878US10374058B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 6, 2019·2 cites·20 claims
- 4978US2024234214A1Gate structure and patterning methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5078US2025308990A1Semiconductor Structure with Staggered Selective GrowthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 97 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →