Inventor · disambiguated record
Wenyu Xu
Also filed as: XU WENYU
180 granted patents·10 pending applications·777 citations·filing 2012–2025
99Inventor score
Files withIBM183NEUBORON MEDTECH LTD3TECHNOLOGY BIOLOGY CORP NANJINGJINSIRUI SCIENCE &1TESSERA INC1TESSERA LLC1
Top patents by PatentIndex Score
190 records- 0199US9899515B1Fabrication of a pair of vertical fin field effect transistors having a merged top source/drainIBM·Filed 2016·Granted Feb 20, 2018·46 cites·13 claims
- 0299US9859409B2Single-electron transistor with wrap-around gateIBM·Filed 2016·Granted Jan 2, 2018·28 cites·17 claims
- 0399US9859166B1Vertical field effect transistor having U-shaped top spacerIBM·Filed 2017·Granted Jan 2, 2018·52 cites·20 claims
- 0499US9853028B1Vertical FET with reduced parasitic capacitanceIBM·Filed 2017·Granted Dec 26, 2017·33 cites·20 claims
- 0598US10424639B1Nanosheet transistor with high-mobility channelIBM·Filed 2018·Granted Sep 24, 2019·33 cites·20 claims
- 0698US10229971B1Integration of thick and thin nanosheet transistors on a single chipIBM·Filed 2017·Granted Mar 12, 2019·36 cites·20 claims
- 0798US9972542B1Hybrid-channel nano-sheet FETsIBM·Filed 2017·Granted May 15, 2018·22 cites·20 claims
- 0898US9799655B1Flipped vertical field-effect-transistorIBM·Filed 2016·Granted Oct 24, 2017·21 cites·7 claims
- 0998US9761728B1Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the sameIBM·Filed 2016·Granted Sep 12, 2017·33 cites·20 claims
- 1098US9741717B1FinFETs with controllable and adjustable channel dopingIBM·Filed 2016·Granted Aug 22, 2017·23 cites·17 claims
- 1197US10328286B2Beam shaping assembly for neutron capture therapyNEUBORON MEDTECH LTD·Filed 2017·Granted Jun 25, 2019·19 cites·7 claims
- 1297US10141448B1Vertical FETs with different gate lengths and spacer thicknessesIBM·Filed 2017·Granted Nov 27, 2018·22 cites·20 claims
- 1397US10083871B2Fabrication of a vertical transistor with self-aligned bottom source/drainIBM·Filed 2016·Granted Sep 25, 2018·16 cites·20 claims
- 1497US9768085B1Top contact resistance measurement in vertical FETsIBM·Filed 2016·Granted Sep 19, 2017·17 cites·14 claims
- 1597US9721845B1Vertical field effect transistors with bottom contact metal directly beneath finsIBM·Filed 2016·Granted Aug 1, 2017·21 cites·20 claims
- 1697US9653458B1Integrated device with P-I-N diodes and vertical field effect transistorsIBM·Filed 2016·Granted May 16, 2017·18 cites·20 claims
- 1797US9607899B1Integration of vertical transistors with 3D long channel transistorsIBM·Filed 2016·Granted Mar 28, 2017·22 cites·20 claims
- 1896US10566445B2Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gatesIBM·Filed 2018·Granted Feb 18, 2020·11 cites·10 claims
- 1996US9865705B2Vertical field effect transistors with bottom source/drain epitaxyIBM·Filed 2016·Granted Jan 9, 2018·10 cites·20 claims
- 2095US10176997B1Direct gate patterning for vertical transport field effect transistorIBM·Filed 2017·Granted Jan 8, 2019·12 cites·13 claims
- 2195US10032676B1Vertical field effect transistor having U-shaped top spacerIBM·Filed 2017·Granted Jul 24, 2018·9 cites·20 claims
- 2295US9653602B1Tensile and compressive fins for vertical field effect transistorsIBM·Filed 2016·Granted May 16, 2017·14 cites·20 claims
- 2394US10340364B2H-shaped VFET with increased current drivabilityIBM·Filed 2017·Granted Jul 2, 2019·11 cites·20 claims
- 2494US10312350B1Nanosheet with changing SiGe percentage for SiGe lateral recessIBM·Filed 2017·Granted Jun 4, 2019·7 cites·15 claims
- 2594US10103246B2Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edgesIBM·Filed 2016·Granted Oct 16, 2018·8 cites·20 claims
- 2694US9722125B1Radiation sensor, method of forming the sensor and device including the sensorIBM·Filed 2016·Granted Aug 1, 2017·8 cites·25 claims
- 2793US10615256B2Nanosheet transistor gate structure having reduced parasitic capacitanceIBM·Filed 2018·Granted Apr 7, 2020·7 cites·20 claims
- 2893US10361200B1Vertical fin field effect transistor with integral U-shaped electrical gate connectionIBM·Filed 2018·Granted Jul 23, 2019·8 cites·20 claims
- 2993US9960164B2Flipped vertical field-effect-transistorIBM·Filed 2017·Granted May 1, 2018·5 cites·15 claims
- 3093US9595605B1Vertical single electron transistor formed by condensationIBM·Filed 2016·Granted Mar 14, 2017·7 cites·20 claims
- 3192US11798852B2Hybrid-channel nano-sheet FETsTESSERA LLC·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
- 3292US11621348B2Vertical transistor devices with composite high-K and low-K spacers with a controlled top junctionIBM·Filed 2020·Granted Apr 4, 2023·2 cites·17 claims
- 3392US10617893B2Beam shaping assembly for neutron capture therapyNEUBORON MEDTECH LTD·Filed 2019·Granted Apr 14, 2020·4 cites·20 claims
- 3492US10615258B2Nanosheet semiconductor structure with inner spacer formed by oxidationIBM·Filed 2019·Granted Apr 7, 2020·5 cites·20 claims
- 3592US10505048B1Self-aligned source/drain contact for vertical field effect transistorIBM·Filed 2018·Granted Dec 10, 2019·7 cites·15 claims
- 3692US10505019B1Vertical field effect transistors with self aligned source/drain junctionsIBM·Filed 2018·Granted Dec 10, 2019·6 cites·13 claims
- 3792US10388577B1Nanosheet devices with different types of work function metalsIBM·Filed 2018·Granted Aug 20, 2019·6 cites·19 claims
- 3892US10002803B2Flipped vertical field-effect-transistorIBM·Filed 2017·Granted Jun 19, 2018·4 cites·10 claims
- 3991US10957601B2Self-aligned fin recesses in nanosheet field effect transistorsIBM·Filed 2018·Granted Mar 23, 2021·6 cites·15 claims
- 4091US10134874B2Vertical field effect transistors with bottom source/drain epitaxyIBM·Filed 2017·Granted Nov 20, 2018·4 cites·17 claims
- 4191US9698266B1Semiconductor device strain relaxation buffer layerIBM·Filed 2016·Granted Jul 4, 2017·5 cites·15 claims
- 4290US11430864B2VFET device with controllable top spacerIBM·Filed 2020·Granted Aug 30, 2022·2 cites·20 claims
- 4390US10559502B2Fabrication of a pair of vertical fin field effect transistors having a merged top source/drainIBM·Filed 2017·Granted Feb 11, 2020·4 cites·20 claims
- 4490US10504793B2Hybrid-channel nano-sheet FETsIBM·Filed 2018·Granted Dec 10, 2019·3 cites·19 claims
- 4590US10141234B2Flipped vertical field-effect-transistorIBM·Filed 2017·Granted Nov 27, 2018·3 cites·10 claims
- 4689US10985161B2Single diffusion break isolation for gate-all-around field-effect transistor devicesIBM·Filed 2019·Granted Apr 20, 2021·5 cites·12 claims
- 4789US10930756B2Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gatesIBM·Filed 2020·Granted Feb 23, 2021·2 cites·20 claims
- 4889US10381468B2Method and structure for forming improved single electron transistor with gap tunnel barriersIBM·Filed 2017·Granted Aug 13, 2019·5 cites·16 claims
- 4989US10332962B2Nanosheet semiconductor structure with inner spacer formed by oxidationIBM·Filed 2017·Granted Jun 25, 2019·4 cites·20 claims
- 5089US10236355B2Fabrication of a vertical fin field effect transistor with a reduced contact resistanceIBM·Filed 2017·Granted Mar 19, 2019·4 cites·20 claims
Showing the top 50 of 190 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →