Inventor · disambiguated record
Xikun Wang
Also filed as: WANG XIKUN
50 granted patents·10 pending applications·4,818 citations·filing 1997–2021
99Inventor score
Top patents by PatentIndex Score
60 records- 0199US10049891B1Selective in situ cobalt residue removalAPPLIED MATERIALS INC·Filed 2017·Granted Aug 14, 2018·101 cites·19 claims
- 0299US9607856B2Selective titanium nitride removalAPPLIED MATERIALS INC·Filed 2015·Granted Mar 28, 2017·126 cites·18 claims
- 0399US9520303B2Aluminum selective etchAPPLIED MATERIALS INC·Filed 2014·Granted Dec 13, 2016·131 cites·14 claims
- 0499US9449846B2Vertical gate separationAPPLIED MATERIALS INC·Filed 2015·Granted Sep 20, 2016·133 cites·15 claims
- 0599US9190293B2Even tungsten etch for high aspect ratio trenchesAPPLIED MATERIALS INC·Filed 2014·Granted Nov 17, 2015·251 cites·14 claims
- 0699US9040422B2Selective titanium nitride removalAPPLIED MATERIALS INC·Filed 2013·Granted May 26, 2015·194 cites·19 claims
- 0798US9947549B1Cobalt-containing material removalAPPLIED MATERIALS INC·Filed 2016·Granted Apr 17, 2018·103 cites·20 claims
- 0898US9711366B2Selective etch for metal-containing materialsAPPLIED MATERIALS INC·Filed 2016·Granted Jul 18, 2017·115 cites·13 claims
- 0998US9553102B2Tungsten separationAPPLIED MATERIALS INC·Filed 2014·Granted Jan 24, 2017·46 cites·13 claims
- 1098US9478434B2Chlorine-based hardmask removalAPPLIED MATERIALS INC·Filed 2014·Granted Oct 25, 2016·134 cites·14 claims
- 1198US9472417B2Plasma-free metal etchAPPLIED MATERIALS INC·Filed 2014·Granted Oct 18, 2016·138 cites·9 claims
- 1298US9412608B2Dry-etch for selective tungsten removalAPPLIED MATERIALS INC·Filed 2015·Granted Aug 9, 2016·134 cites·17 claims
- 1398US9373522B1Titanium nitride removalAPPLIED MATERIALS INC·Filed 2015·Granted Jun 21, 2016·140 cites·13 claims
- 1498US9355856B2V trench dry etchAPPLIED MATERIALS INC·Filed 2014·Granted May 31, 2016·146 cites·15 claims
- 1598US9355862B2Fluorine-based hardmask removalAPPLIED MATERIALS INC·Filed 2014·Granted May 31, 2016·147 cites·12 claims
- 1698US9309598B2Oxide and metal removalAPPLIED MATERIALS INC·Filed 2014·Granted Apr 12, 2016·560 cites·18 claims
- 1798US9299575B2Gas-phase tungsten etchAPPLIED MATERIALS INC·Filed 2014·Granted Mar 29, 2016·163 cites·15 claims
- 1898US9299582B2Selective etch for metal-containing materialsAPPLIED MATERIALS INC·Filed 2014·Granted Mar 29, 2016·154 cites·8 claims
- 1998US9299583B1Aluminum oxide selective etchAPPLIED MATERIALS INC·Filed 2014·Granted Mar 29, 2016·160 cites·15 claims
- 2098US9287134B2Titanium oxide etchAPPLIED MATERIALS INC·Filed 2014·Granted Mar 15, 2016·153 cites·15 claims
- 2198US8980763B2Dry-etch for selective tungsten removalAPPLIED MATERIALS INC·Filed 2013·Granted Mar 17, 2015·206 cites·14 claims
- 2298US8951429B1Tungsten oxide processingAPPLIED MATERIALS INC·Filed 2013·Granted Feb 10, 2015·221 cites·15 claims
- 2398US6699399B1Self-cleaning etch processAPPLIED MATERIALS INC·Filed 2000·Granted Mar 2, 2004·500 cites·72 claims
- 2497US10465294B2Oxide and metal removalAPPLIED MATERIALS INC·Filed 2016·Granted Nov 5, 2019·25 cites·17 claims
- 2597US6527968B1Two-stage self-cleaning silicon etch processAPPLIED MATERIALS INC·Filed 2000·Granted Mar 4, 2003·268 cites·29 claims
- 2696US9659791B2Metal removal with reduced surface roughnessAPPLIED MATERIALS INC·Filed 2015·Granted May 23, 2017·101 cites·20 claims
- 2794US8016948B2Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metalAPPLIED MATERIALS INC·Filed 2008·Granted Sep 13, 2011·14 cites·18 claims
- 2894US6136211ASelf-cleaning etch processAPPLIED MATERIALS INC·Filed 1997·Granted Oct 24, 2000·160 cites·43 claims
- 2988US10256112B1Selective tungsten removalAPPLIED MATERIALS INC·Filed 2017·Granted Apr 9, 2019·4 cites·19 claims
- 3086US10727080B2Tantalum-containing material removalAPPLIED MATERIALS INC·Filed 2018·Granted Jul 28, 2020·4 cites·18 claims
- 3186US9540736B2Methods of etching films with reduced surface roughnessAPPLIED MATERIALS INC·Filed 2015·Granted Jan 10, 2017·2 cites·19 claims
- 3285US7368394B2Etch methods to form anisotropic features for high aspect ratio applicationsAPPLIED MATERIALS INC·Filed 2006·Granted May 6, 2008·11 cites·20 claims
- 3383US9896770B2Methods of etching films with reduced surface roughnessAPPLIED MATERIALS INC·Filed 2016·Granted Feb 20, 2018·2 cites·16 claims
- 3483US6787054B2Two-stage etching processFiled 2003·Granted Sep 7, 2004·26 cites·14 claims
- 3580US7846264B2Cleaning method used in removing contaminants from a solid yttrium oxide-containing substrateAPPLIED MATERIALS INC·Filed 2006·Granted Dec 7, 2010·7 cites·19 claims
- 3676US11488812B2Method and apparatus for reducing particle defects in plasma etch chambersAPPLIED MATERIALS INC·Filed 2019·Granted Nov 1, 2022·1 cites·9 claims
- 3776US10658161B2Method and apparatus for reducing particle defects in plasma etch chambersWANG XIKUN·Filed 2011·Granted May 19, 2020·4 cites·18 claims
- 3876US10163696B2Selective cobalt removal for bottom up gapfillAPPLIED MATERIALS INC·Filed 2016·Granted Dec 25, 2018·2 cites·18 claims
- 3974US6649532B1Methods for etching an organic anti-reflective coatingAPPLIED MATERIALS INC·Filed 2002·Granted Nov 18, 2003·16 cites·14 claims
- 4073US11004687B2Gate contact over active processesAPPLIED MATERIALS INC·Filed 2019·Granted May 11, 2021·1 cites·20 claims
- 4172US11062887B2High temperature RF heater pedestalsAPPLIED MATERIALS INC·Filed 2018·Granted Jul 13, 2021·1 cites·20 claims
- 4269US10699953B2Method for creating a fully self-aligned viaMICROMATERIALS LLC·Filed 2019·Granted Jun 30, 2020·1 cites·20 claims
- 4368US11462411B2Gate contact over active regionsAPPLIED MATERIALS INC·Filed 2021·Granted Oct 4, 2022·0 cites·20 claims
- 4467US7780862B2Device and method for etching flash memory gate stacks comprising high-k dielectricAPPLIED MATERIALS INC·Filed 2006·Granted Aug 24, 2010·2 cites·11 claims
- 4566US7964512B2Method for etching high dielectric constant materialsAPPLIED MATERIALS INC·Filed 2005·Granted Jun 21, 2011·3 cites·30 claims
- 4663US10233547B2Methods of etching films with reduced surface roughnessAPPLIED MATERIALS INC·Filed 2018·Granted Mar 19, 2019·0 cites·19 claims
- 4763US2011036874A1Solid yttrium oxide-containing substrate which has been cleaned to remove impuritiesAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 4857US10770346B2Selective cobalt removal for bottom up gapfillAPPLIED MATERIALS INC·Filed 2018·Granted Sep 8, 2020·0 cites·20 claims
- 4957US7270761B2Fluorine free integrated process for etching aluminum including chamber dry cleanAPPLEID MATERIALS INC·Filed 2002·Granted Sep 18, 2007·7 cites·34 claims
- 5054US11024537B2Methods and apparatus for hybrid feature metallizationAPPLIED MATERIALS INC·Filed 2019·Granted Jun 1, 2021·0 cites·20 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →