Inventor · disambiguated record
Yan Man Tsui
Also filed as: TSUI YAN MAN
31 granted patents·1 pending application·1,333 citations·filing 1996–2004
98Inventor score
Files withGEN SEMICONDUCTOR INC19MEGAMOS CORP7MAGEPOWER SEMICONDUCTOR CORP2GEN SEMICONDUCTOR OF TAIWAN LT1GEN SEMICONDUCTOR TAIWAN LTD1
Top patents by PatentIndex Score
32 records- 0197US5895951AMOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenchesMEGAMOS CORP·Filed 1996·Granted Apr 20, 1999·239 cites·11 claims
- 0296US6593620B1Trench DMOS transistor with embedded trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2000·Granted Jul 15, 2003·123 cites·25 claims
- 0396US6475884B2Devices and methods for addressing optical edge effects in connection with etched trenchesGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 5, 2002·86 cites·11 claims
- 0496US6472708B1Trench MOSFET with structure having low gate chargeGEN SEMICONDUCTOR INC·Filed 2000·Granted Oct 29, 2002·98 cites·9 claims
- 0595US6657254B2Trench MOSFET device with improved on-resistanceGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 2, 2003·86 cites·14 claims
- 0692US6762098B2Trench DMOS transistor with embedded trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2003·Granted Jul 13, 2004·59 cites·6 claims
- 0792US5763915ADMOS transistors having trenched gate oxideMAGEMOS CORP·Filed 1996·Granted Jun 9, 1998·149 cites·7 claims
- 0890US6518127B2Trench DMOS transistor having a double gate structureGEN SEMICONDUCTOR INC·Filed 2001·Granted Feb 11, 2003·48 cites·2 claims
- 0989US6548860B1DMOS transistor structure having improved performanceGEN SEMICONDUCTOR INC·Filed 2000·Granted Apr 15, 2003·47 cites·22 claims
- 1085US6822288B2Trench MOSFET device with polycrystalline silicon source contact structureGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 23, 2004·32 cites·16 claims
- 1185US6445037B1Trench DMOS transistor having lightly doped source structureGEN SEMICONDUCTOR INC·Filed 2000·Granted Sep 3, 2002·37 cites·28 claims
- 1284US6707127B1Trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2000·Granted Mar 16, 2004·30 cites·9 claims
- 1381US6048759AGate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdownMAGEPOWER SEMICONDUCTOR CORP·Filed 1998·Granted Apr 11, 2000·49 cites·19 claims
- 1477US6620691B2Semiconductor trench device with enhanced gate oxide integrity structureGEN SEMICONDUCTOR INC·Filed 2001·Granted Sep 16, 2003·22 cites·14 claims
- 1572US6740951B2Two-mask trench schottky diodeGEN SEMICONDUCTOR INC·Filed 2001·Granted May 25, 2004·17 cites·26 claims
- 1670US5729037AMOSFET structure and fabrication process for decreasing threshold voltageMEGAMOS CORP·Filed 1996·Granted Mar 17, 1998·30 cites·7 claims
- 1769US5923065APower MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savingsMEGAMOS CORP·Filed 1996·Granted Jul 13, 1999·30 cites·6 claims
- 1867US6404025B1MOSFET power device manufactured with reduced number of masks by fabrication simplified processesMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Jun 11, 2002·27 cites·3 claims
- 1967US5668026ADMOS fabrication process implemented with reduced number of masksMEGAMOS CORP·Filed 1996·Granted Sep 16, 1997·34 cites·7 claims
- 2065US5877529AMosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggednessMEGAMOS CORP·Filed 1997·Granted Mar 2, 1999·24 cites·16 claims
- 2163US6713352B2Method of forming a trench MOSFET with structure having increased cell density and low gate chargeGEN SEMICONDUCTOR INC·Filed 2002·Granted Mar 30, 2004·9 cites·13 claims
- 2263US6555895B1Devices and methods for addressing optical edge effects in connection with etched trenchesGEN SEMICONDUCTOR INC·Filed 2000·Granted Apr 29, 2003·6 cites·13 claims
- 2361US6518152B2Method of forming a trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2002·Granted Feb 11, 2003·8 cites·14 claims
- 2460US6576952B2Trench DMOS structure with peripheral trench with no source regionsGEN SEMICONDUCTOR INC·Filed 2002·Granted Jun 10, 2003·5 cites·7 claims
- 2554US7094640B2Method of making a trench MOSFET device with improved on-resistanceGEN SEMICONDUCTOR INC·Filed 2003·Granted Aug 22, 2006·5 cites·6 claims
- 2653US5883416AGate-contact structure to prevent contact metal penetration through gate layer without affecting breakdown voltageMEGAMOS CORP·Filed 1997·Granted Mar 16, 1999·14 cites·8 claims
- 2749US5883410AEdge wrap-around protective extension for covering and protecting edges of thick oxide layerMEGAMOS CORP·Filed 1997·Granted Mar 16, 1999·11 cites·9 claims
- 2846US7015125B2Trench MOSFET device with polycrystalline silicon source contact structureGEN SEMICONDUCTOR INC·Filed 2004·Granted Mar 21, 2006·2 cites·5 claims
- 2946US6576985B2Semiconductor device packaging assemblyGEN SEMICONDUCTOR TAIWAN LTD·Filed 2001·Granted Jun 10, 2003·4 cites·7 claims
- 3045US6781196B2Trench DMOS transistor having improved trench structureGEN SEMICONDUCTOR INC·Filed 2002·Granted Aug 24, 2004·2 cites·14 claims
- 3139US6927094B2Method for assembling a semiconductor chip utilizing conducting bars rather than bonding wiresGEN SEMICONDUCTOR OF TAIWAN LT·Filed 2003·Granted Aug 9, 2005·0 cites·8 claims
- 3230US2001003367A1Trenched dmos device with low gate chargesFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →