Inventor · disambiguated record
Yi Xu
Also filed as: XU YI · Xu yi-yang
62 granted patents·18 pending applications·1,592 citations·filing 1999–2024
99Inventor score
Files withAPPLIED MATERIALS INC44CHARTERED SEMICONDUCTOR MFG33CENTRAL ENERGY SCIENCE TECH LTD1CHINA PETROCHEMICAL CORP1NANJING CHEMISTRY NEW ENERGY TECH CO LTD1
Top patents by PatentIndex Score
80 records- 0198US6348407B1Method to improve adhesion of organic dielectrics in dual damascene interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Feb 19, 2002·250 cites·34 claims
- 0296US6358842B1Method to form damascene interconnects with sidewall passivation to protect organic dielectricsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Mar 19, 2002·141 cites·30 claims
- 0396US6265321B1Air bridge process for forming air gapsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jul 24, 2001·148 cites·37 claims
- 0494US6683002B1Method to create a copper diffusion deterrent interfaceCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jan 27, 2004·71 cites·7 claims
- 0594US6436824B1Low dielectric constant materials for copper damasceneCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Aug 20, 2002·175 cites·28 claims
- 0691US6352921B1Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallizationCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Mar 5, 2002·64 cites·20 claims
- 0790US6350675B1Integration of silicon-rich material in the self-aligned via approach of dual damascene interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Feb 26, 2002·55 cites·44 claims
- 0889US6165891ADamascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layerCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Dec 26, 2000·87 cites·40 claims
- 0987US11404313B2Selective tungsten deposition at low temperaturesAPPLIED MATERIALS INC·Filed 2020·Granted Aug 2, 2022·2 cites·18 claims
- 1086US6417088B1Method of application of displacement reaction to form a conductive cap layer for flip-chip, COB, and micro metal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·44 cites·22 claims
- 1186US6378759B1Method of application of conductive cap-layer in flip-chip, COB, and micro metal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·37 cites·17 claims
- 1286US6124194AMethod of fabrication of anti-fuse integrated with dual damascene processCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Sep 26, 2000·90 cites·13 claims
- 1385US6690091B1Damascene structure with reduced capacitance using a boron carbon nitride passivation layer, etch stop layer, and/or cap layerCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Feb 10, 2004·29 cites·7 claims
- 1485US6627778B2Selective hydrogenation process for removing C10-C16 diolefinsCHINA PETROCHEMICAL CORP·Filed 2001·Granted Sep 30, 2003·23 cites·9 claims
- 1585US6331479B1Method to prevent degradation of low dielectric constant material in copper damascene interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Dec 18, 2001·84 cites·23 claims
- 1684US12230479B2Processing chamber with multiple plasma unitsAPPLIED MATERIALS INC·Filed 2024·Granted Feb 18, 2025·0 cites·5 claims
- 1784US6720204B2Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Apr 13, 2004·38 cites·18 claims
- 1883US6117747AIntegration of MOM capacitor into dual damascene processCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Sep 12, 2000·73 cites·20 claims
- 1980US11380536B2Multi-step pre-clean for selective metal gap fillAPPLIED MATERIALS INC·Filed 2020·Granted Jul 5, 2022·1 cites·18 claims
- 2080US11164780B2Process integration approach for selective metal via fillAPPLIED MATERIALS INC·Filed 2019·Granted Nov 2, 2021·3 cites·15 claims
- 2180US6475810B1Method of manufacturing embedded organic stop layer for dual damascene patterningCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Nov 5, 2002·24 cites·24 claims
- 2278US6429117B1Method to create copper traps by modifying treatment on the dielectrics surfaceCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Aug 6, 2002·21 cites·34 claims
- 2377US11955319B2Processing chamber with multiple plasma unitsAPPLIED MATERIALS INC·Filed 2022·Granted Apr 9, 2024·0 cites·5 claims
- 2476US9947578B2Methods for forming low-resistance contacts through integrated process flow systemsAPPLIED MATERIALS INC·Filed 2016·Granted Apr 17, 2018·2 cites·19 claims
- 2573US10508339B2Blocker plate for use in a substrate process chamberAPPLIED MATERIALS INC·Filed 2017·Granted Dec 17, 2019·1 cites·11 claims
- 2672US11967525B2Selective tungsten deposition at low temperaturesAPPLIED MATERIALS INC·Filed 2022·Granted Apr 23, 2024·0 cites·15 claims
- 2772US6350689B1Method to remove copper contamination by using downstream oxygen and chelating agent plasmaCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Feb 26, 2002·15 cites·40 claims
- 2872US6207554B1Gap filling process in integrated circuits using low dielectric constant materialsCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Mar 27, 2001·39 cites·22 claims
- 2967US10170321B2Aluminum content control of TiAIN filmsAPPLIED MATERIALS INC·Filed 2017·Granted Jan 1, 2019·1 cites·15 claims
- 3066US11948836B2Deposition of metal films with tungsten linerAPPLIED MATERIALS INC·Filed 2021·Granted Apr 2, 2024·0 cites·18 claims
- 3166US11776806B2Multi-step pre-clean for selective metal gap fillAPPLIED MATERIALS INC·Filed 2022·Granted Oct 3, 2023·0 cites·17 claims
- 3266US2022319837A1Dual plasma pre-clean for selective gap fillAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 3365US6705512B2Method of application of conductive cap-layer in flip-chip, cob, and micro metal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Mar 16, 2004·10 cites·17 claims
- 3465US2023343643A1Gradient oxidation and etch for pvd metal as bottom liner in bottom up gap fillAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 3564US2021159052A1Processing Chamber With Multiple Plasma UnitsAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 3662US11776805B2Selective oxidation and simplified pre-cleanAPPLIED MATERIALS INC·Filed 2021·Granted Oct 3, 2023·0 cites·16 claims
- 3762US11721542B2Dual plasma pre-clean for selective gap fillAPPLIED MATERIALS INC·Filed 2020·Granted Aug 8, 2023·0 cites·9 claims
- 3862US6987321B2Copper diffusion deterrent interfaceCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Jan 17, 2006·7 cites·20 claims
- 3961US11421322B2Blocker plate for use in a substrate process chamberAPPLIED MATERIALS INC·Filed 2019·Granted Aug 23, 2022·0 cites·16 claims
- 4061US6261955B1Application of vapor phase HFACAC-based compound for use in copper decontamination and cleaning processesCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jul 17, 2001·6 cites·16 claims
- 4160US6415973B1Method of application of copper solution in flip-chip, COB, and micrometal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·9 cites·25 claims
- 4259US11515200B2Selective tungsten deposition within trench structuresAPPLIED MATERIALS INC·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 4359US6391783B1Method to thin down copper barriers in deep submicron geometries by using alkaline earth element, barrier additives, or self assembly techniqueCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted May 21, 2002·6 cites·22 claims
- 4459US6309982B1Method for minimizing copper diffusion by doping an inorganic dielectric layer with a reducing agentCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 30, 2001·6 cites·19 claims
- 4559US2021384035A1Fluorine-Free Tungsten ALD And Tungsten Selective CVD For DielectricsAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 4658US12394619B2Metal oxide preclean for bottom-up gapfill in MEOL and BEOLAPPLIED MATERIALS INC·Filed 2023·Granted Aug 19, 2025·0 cites·13 claims
- 4758US12272659B2Methods for forming metal gapfill with low resistivityAPPLIED MATERIALS INC·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 4858US6569770B2Method for improving oxide erosion of tungsten CMP operationsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted May 27, 2003·8 cites·21 claims
- 4958US2025357117A1Doped tungsten carbide low-k etch hard maskAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 5057US12469747B2Selective metal selectivity improvement with RF pulsingAPPLIED MATERIALS INC·Filed 2023·Granted Nov 11, 2025·0 cites·15 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →