Processing Chamber With Multiple Plasma Units

Abstract

Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

What is claimed is: 
     
         1 . A processing chamber comprising:
 a lid and sidewalls defining an internal volume;   a remote plasma unit in the internal volume;   a direct plasma unit in the internal volume; and   at least one electrode,   wherein the remote plasma unit generates a remote plasma and the direct plasma unit generates a direct plasma.   
     
     
         2 . The processing chamber of  claim 1 , further comprising an ion filter separating the remote plasma unit and the direct plasma unit. 
     
     
         3 . The processing chamber of  claim 2 , wherein the ion filter comprises a plurality of apertures. 
     
     
         4 . The processing chamber of  claim 3 , wherein the ion filter is a showerhead. 
     
     
         5 . The processing chamber of  claim 1 , further comprising a pedestal. 
     
     
         6 . The processing chamber of  claim 5 , wherein the pedestal comprises the at least one electrode. 
     
     
         7 . The processing chamber of  claim 5 , wherein the at least one electrode is positioned in electrical communication with the remote plasma unit. 
     
     
         8 . The processing chamber of  claim 1 , further comprising an inductively coupled plasma (ICP) coil. 
     
     
         9 . The processing chamber of  claim 8 , wherein the ICP coil is positioned in electrical communication with the remote plasma unit. 
     
     
         10 . The processing chamber of  claim 1 , further comprising a controller. 
     
     
         11 . The processing chamber of  claim 10 , wherein the controller comprises one or more of a central processing unit (CPU), a memory, inputs/outputs (I/O), and support circuits. 
     
     
         12 . A processing method comprising: exposing a substrate to a remote plasma and exposing the substrate to a direct plasma. 
     
     
         13 . The processing method of  claim 12 , wherein exposing the substrate to the remote plasma and to the direct plasma occurs sequentially. 
     
     
         14 . The processing method of  claim 12 , wherein exposing the substrate to the remote plasma and to the direct plasma occurs simultaneously. 
     
     
         15 . The processing method of  claim 12 , wherein exposing the substrate to the remote plasma and to the direct plasma cleans or treats the substrate. 
     
     
         16 . The processing method of  claim 12 , further comprising exposing the substrate to at least one precursor to form a film on the substrate. 
     
     
         17 . The processing method of  claim 12 , wherein the substrate comprises one or more of a trench, a via, or a peak. 
     
     
         18 . The processing method of  claim 17 , wherein the substrate comprises one or more of a residue or a native oxide thereon. 
     
     
         19 . A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:
 exposing substrate to a remote plasma; and   exposing the substrate to a direct plasma.   
     
     
         20 . The non-transitory computer readable medium of  claim 19 , further including instructions that, when executed by a controller of a processing chamber causes the processing chamber to perform the operations of: exposing the substrate to at least one precursor to form a film on the substrate.