Dual plasma pre-clean for selective gap fill

Abstract

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

What is claimed is: 
     
         1 . A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:
 exposing a substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric;   wherein the processing chamber comprises a dual plasma lid performing the dual plasma treatment,   wherein the processing chamber comprises at least one side wall defining an internal volume, the internal volume comprising a remote plasma unit and a direct plasma unit,   wherein the dual plasma treatment comprises simultaneously or sequentially exposing the surface structure to a direct plasma generated by the direct plasma unit and to a remote plasma generated by the remote plasma unit.   
     
     
         2 . The non-transitory computer readable medium of  claim 1 , further including instructions that, when executed by a controller of a processing chamber causes the processing chamber to perform the operations of: exposing the substrate to at least one precursor to form a film on the substrate. 
     
     
         3 . The non-transitory computer readable medium of  claim 1 , further including instructions that, when executed by a controller of a processing chamber causes the processing chamber to perform the operations of: exposing the substrate to a direct plasma of oxygen and to a remote plasma of hydrogen. 
     
     
         4 . The non-transitory computer readable medium of  claim 1 , wherein the direct plasma comprises one or more of a direct oxygen plasma and a direct hydrogen plasma, and the remote plasma comprises one or more of a remote oxygen plasma and a remote hydrogen plasma. 
     
     
         5 . The non-transitory computer readable medium of  claim 1 , further including instructions that, when executed by a controller of a processing chamber causes the processing chamber to perform the operations of: exposing the substrate to a direct plasma of a co-flow of hydrogen and oxygen, and to a remote plasma of a co-flow of hydrogen and oxygen.