Inventor · disambiguated record
Young-Lim Park
Also filed as: PARK YOUNG-LIM
42 granted patents·11 pending applications·241 citations·filing 2006–2024
97Inventor score
Top patents by PatentIndex Score
53 records- 0196US7943502B2Method of forming a phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 17, 2011·26 cites·12 claims
- 0294US11133314B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 28, 2021·4 cites·20 claims
- 0394US7727884B2Methods of forming a semiconductor device including a phase change material layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 1, 2010·19 cites·20 claims
- 0494US7569417B2Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 4, 2009·38 cites·27 claims
- 0592US11069768B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 20, 2021·3 cites·20 claims
- 0690US11244946B2Semiconductor devices and methods for fabricating thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 8, 2022·2 cites·20 claims
- 0789US11488958B2Semiconductor device electrodes including fluorineSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 1, 2022·2 cites·18 claims
- 0889US10453913B2Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 22, 2019·5 cites·21 claims
- 0988US10847603B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 24, 2020·5 cites·20 claims
- 1088US10825893B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 3, 2020·5 cites·11 claims
- 1188US8263455B2Method of forming variable resistance memory devicePARK YOUNG-LIM·Filed 2010·Granted Sep 11, 2012·13 cites·21 claims
- 1288US8034683B2Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formedSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 11, 2011·8 cites·20 claims
- 1388US7759667B2Phase change memory device including resistant materialSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·17 cites·9 claims
- 1487US8263963B2Phase change memory devicePARK YOUNG-LIM·Filed 2011·Granted Sep 11, 2012·3 cites·7 claims
- 1586US7824954B2Methods of forming phase change memory devices having bottom electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 2, 2010·21 cites·36 claims
- 1685US7867880B2Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursorsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 11, 2011·6 cites·14 claims
- 1784US10892345B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 12, 2021·3 cites·18 claims
- 1883US11233118B2Integrated circuit device having dielectric layer, and method and apparatus for manufacturing the integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 25, 2022·3 cites·20 claims
- 1983US8426840B2Nonvolatile memory cells having phase changeable patterns therein for data storageAN HYEONG-GEUN·Filed 2010·Granted Apr 23, 2013·12 cites·10 claims
- 2082US2024397704A1Semiconductor devices and methods for fabricating thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2181US12089397B2Semiconductor devices and methods for fabricating thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·14 claims
- 2281US8278206B2Variable resistance memory device and methods of forming the sameOH GYUHWAN·Filed 2009·Granted Oct 2, 2012·12 cites·21 claims
- 2380US10658454B2Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 19, 2020·2 cites·21 claims
- 2480US8501623B2Method of forming a semiconductor device having a metal silicide and alloy layers as electrodeOH GYUHWAN·Filed 2010·Granted Aug 6, 2013·6 cites·29 claims
- 2580US7807497B2Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 5, 2010·5 cites·32 claims
- 2678US7803654B2Variable resistance non-volatile memory cells and methods of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 28, 2010·6 cites·25 claims
- 2776US8558348B2Variable resistance memory device and methods of forming the sameOH GYUHWAN·Filed 2012·Granted Oct 15, 2013·5 cites·6 claims
- 2875US11764283B2Semiconductor device including capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·19 claims
- 2974US11711915B2Semiconductor devices and methods for fabricating thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 25, 2023·0 cites·11 claims
- 3074US8187918B2Methods of forming multi-level cell of semiconductor memoryOH GYU-HWAN·Filed 2009·Granted May 29, 2012·5 cites·11 claims
- 3173US11621339B2Semiconductor device including capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 4, 2023·0 cites·20 claims
- 3270US11114541B2Semiconductor device including capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 7, 2021·0 cites·19 claims
- 3369US12471300B2Capacitor structure, semiconductor memory device including the structure, and method for manufacturing the structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 3468US11600621B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 3566US11527604B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 3666US8652897B2Semiconductor memory devices and methods of fabricating the sameKIM YOUNGKUK·Filed 2011·Granted Feb 18, 2014·3 cites·54 claims
- 3765US2012319069A1Phase Change Memory DevicePARK YOUNG-LIM·Filed 2012·Application pending·0 cites
- 3862US9685318B2Method of forming semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 20, 2017·1 cites·17 claims
- 3958US8187914B2Methods of forming a phase change memory deviceLEE JIN-IL·Filed 2010·Granted May 29, 2012·1 cites·15 claims
- 4055US2008096386A1Method of forming a phase-changeable layer and method of manufacturing a semiconductor memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4153US2024371863A1Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4252US8133758B2Method of fabricating phase-change memory device having TiC layerOH GYU-HWAN·Filed 2009·Granted Mar 13, 2012·0 cites·12 claims
- 4350US8021977B2Methods of forming contact structures and semiconductor devices fabricated using contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·0 cites·20 claims
- 4449US12080710B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 4549US2014131655A1Semiconductor memory devices and methods of fabricating the sameKIM YOUNG KUK·Filed 2014·Application pending·0 cites
- 4648US2012149166A1METHOD OF FORMING TITANIUM NITRADE (TiN) FILM, NONVOLATILE MEMORY DEVICE USING THE TiN FILM, AND METHOD OF MANUFACTURING THE NONVOLATILE MEMORY DEVICEPARK YOUNG-LIM·Filed 2011·Application pending·0 cites
- 4747US8389408B2Methods of forming a semiconductor device including a metal silicon nitride layerPARK YOUNG-LIM·Filed 2010·Granted Mar 5, 2013·0 cites·14 claims
- 4847US2008272355A1Phase change memory device and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4943US2007148933A1Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 5042US7855145B2Gap filling method and method for forming semiconductor memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 21, 2010·0 cites·14 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →