Inventor · disambiguated record
Yoo-Cheol Shin
Also filed as: SHIN YOO-CHEOL
32 granted patents·4 pending applications·571 citations·filing 1996–2021
97Inventor score
Top patents by PatentIndex Score
36 records- 0198US10381370B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 13, 2019·50 cites·17 claims
- 0297US7480178B2NAND flash memory device having dummy memory cells and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 20, 2009·59 cites·5 claims
- 0396US9431415B2Semiconductor device with vertical memorySHIN YOO-CHEOL·Filed 2014·Granted Aug 30, 2016·24 cites·20 claims
- 0493US7881114B2NAND flash memory device having dummy memory cells and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 1, 2011·25 cites·14 claims
- 0591US9905570B2Semiconductor device with vertical memorySAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 27, 2018·5 cites·14 claims
- 0691US7399672B2Methods of forming nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 15, 2008·19 cites·14 claims
- 0790US6642105B2Semiconductor device having multi-gate insulating layers and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 4, 2003·63 cites·6 claims
- 0889US8575680B2Semiconductor device having air gap and method of fabricating the sameSHIN YOO-CHEOL·Filed 2012·Granted Nov 5, 2013·11 cites·20 claims
- 0989US6867453B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 15, 2005·28 cites·8 claims
- 1087US6326270B1Methods of forming integrated circuit memory devices using masking layers to inhibit overetching of impurity regions and conductive linesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 4, 2001·101 cites·17 claims
- 1186US7776687B2Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 17, 2010·9 cites·21 claims
- 1283US10685708B2Semiconductor device including volatile and non-volatile memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·4 cites·19 claims
- 1383US7223659B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·6 cites·18 claims
- 1482US8228738B2NAND flash memory device having dummy memory cells and methods of operating samePARK KI-TAE·Filed 2010·Granted Jul 24, 2012·6 cites·13 claims
- 1582US7778082B2Non-volatile memory device and programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 17, 2010·13 cites·13 claims
- 1681US8030738B2Semiconductor device with resistor pattern and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 4, 2011·7 cites·15 claims
- 1780US10644019B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 5, 2020·1 cites·12 claims
- 1879US10109644B2Memory deviceSHIN YOO CHEOL·Filed 2016·Granted Oct 23, 2018·3 cites·20 claims
- 1979US5834427ACasein phosphopeptide, casein containing same and process for the preparation thereofHAN SANG KEE·Filed 1996·Granted Nov 10, 1998·51 cites·15 claims
- 2078US7605430B2Nonvolatile memory devices having a fin shaped active region and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 20, 2009·6 cites·14 claims
- 2175US11991879B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 21, 2024·0 cites·11 claims
- 2275US7538385B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 26, 2009·3 cites·20 claims
- 2374US8085592B2Charge-trap flash memory device with reduced erasure stress and related programming and erasing methods thereofYUN SUNG-WON·Filed 2009·Granted Dec 27, 2011·9 cites·5 claims
- 2473US10903226B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 26, 2021·0 cites·19 claims
- 2569US8218363B2Flash memory device and methods programming/reading flash memory deviceKIM JAEHONG·Filed 2010·Granted Jul 10, 2012·4 cites·20 claims
- 2668US6028001AMethods of fabricating contact holes for integrated circuit substrates by etching to define a sidewall and concurrently forming a polymer on the sidewallSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Feb 22, 2000·35 cites·20 claims
- 2765US7109566B2Semiconductor device with resistor pattern and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 19, 2006·9 cites·9 claims
- 2864US7863686B2Nonvolatile memory devices having a fin shaped active regionSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 4, 2011·2 cites·8 claims
- 2961US7772654B2Methods of fabricating nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 10, 2010·1 cites·16 claims
- 3058US7977730B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·0 cites·13 claims
- 3149US2008246073A1Nonvolatile Memory Devices Including a Resistor RegionLEE CHANG-HYUN·Filed 2008·Application pending·0 cites
- 3248US6180761B1Casein from Korean cattleHAN SANG KEE·Filed 1997·Granted Jan 30, 2001·17 cites·1 claims
- 3346US2011309433A1Semiconductor Device With Resistor Pattern And Method Of Fabricating The SameSHIN YOO-CHEOL·Filed 2011·Application pending·0 cites
- 3443US2010264481A1Nonvolatile Memory Devices and Related MethodsSHIN YOO-CHEOL·Filed 2010·Application pending·0 cites
- 3541US8188532B2Semiconductor device having a gate contact structure capable of reducing interfacial resistanceKANG CHANG-SEOK·Filed 2010·Granted May 29, 2012·0 cites·9 claims
- 3639US2006208302A1Non-volatile memory device having charge trap layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →