Inventor · disambiguated record
Zhenxing Bi
Also filed as: BI ZHENXING
180 granted patents·5 pending applications·910 citations·filing 2015–2023
99Inventor score
Top patents by PatentIndex Score
185 records- 0199US10741456B2Vertically stacked nanosheet CMOS transistorIBM·Filed 2018·Granted Aug 11, 2020·27 cites·15 claims
- 0299US10263100B1Buffer regions for blocking unwanted diffusion in nanosheet transistorsIBM·Filed 2018·Granted Apr 16, 2019·145 cites·20 claims
- 0399US9984937B1Vertical silicon/silicon-germanium transistors with multiple threshold voltagesIBM·Filed 2017·Granted May 29, 2018·26 cites·15 claims
- 0499US9735253B1Closely packed vertical transistors with reduced contact resistanceIBM·Filed 2016·Granted Aug 15, 2017·48 cites·15 claims
- 0598US10236364B1Tunnel transistorIBM·Filed 2018·Granted Mar 19, 2019·26 cites·10 claims
- 0698US10043900B1Vertical transport Fin field effect transistors on a substrate with varying effective gate lengthsIBM·Filed 2017·Granted Aug 7, 2018·29 cites·14 claims
- 0798US9972542B1Hybrid-channel nano-sheet FETsIBM·Filed 2017·Granted May 15, 2018·22 cites·20 claims
- 0898US9935102B1Method and structure for improving vertical transistorIBM·Filed 2016·Granted Apr 3, 2018·28 cites·19 claims
- 0998US9899372B1Forming on-chip metal-insulator-semiconductor capacitorIBM·Filed 2016·Granted Feb 20, 2018·31 cites·6 claims
- 1098US9818875B1Approach to minimization of strain loss in strained fin field effect transistorsIBM·Filed 2016·Granted Nov 14, 2017·35 cites·14 claims
- 1198US9799749B1Vertical transport FET devices with uniform bottom spacerIBM·Filed 2016·Granted Oct 24, 2017·30 cites·15 claims
- 1297US10134859B1Transistor with asymmetric spacersIBM·Filed 2017·Granted Nov 20, 2018·16 cites·5 claims
- 1397US10002795B1Method and structure for forming vertical transistors with shared gates and separate gatesIBM·Filed 2017·Granted Jun 19, 2018·16 cites·14 claims
- 1497US9754798B1Hybridization fin reveal for uniform fin reveal depth across different fin pitchesIBM·Filed 2016·Granted Sep 5, 2017·17 cites·16 claims
- 1597US9647120B1Vertical FET symmetric and asymmetric source/drain formationIBM·Filed 2016·Granted May 9, 2017·21 cites·20 claims
- 1696US11121044B2Vertically stacked nanosheet CMOS transistorIBM·Filed 2019·Granted Sep 14, 2021·11 cites·12 claims
- 1796US10832907B2Gate-all-around field-effect transistor devices having source/drain extension contacts to channel layers for reduced parasitic resistanceIBM·Filed 2019·Granted Nov 10, 2020·16 cites·19 claims
- 1896US10714569B1Producing strained nanosheet field effect transistors using a phase change materialIBM·Filed 2019·Granted Jul 14, 2020·12 cites·20 claims
- 1996US10566445B2Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gatesIBM·Filed 2018·Granted Feb 18, 2020·11 cites·10 claims
- 2096US10395988B1Vertical FET transistor with reduced source/drain contact resistanceIBM·Filed 2018·Granted Aug 27, 2019·16 cites·20 claims
- 2196US10249755B1Transistor with asymmetric source/drain overlapIBM·Filed 2018·Granted Apr 2, 2019·12 cites·4 claims
- 2296US9865598B1FinFET with uniform shallow trench isolation recessIBM·Filed 2017·Granted Jan 9, 2018·11 cites·25 claims
- 2395US10276452B1Low undercut N-P work function metal patterning in nanosheet replacement metal gate processIBM·Filed 2018·Granted Apr 30, 2019·13 cites·14 claims
- 2495US10096524B1Semiconductor fin patterning techniques to achieve uniform fin profiles for fin field effect transistorsIBM·Filed 2017·Granted Oct 9, 2018·10 cites·19 claims
- 2595US10079229B1Resistor finsIBM·Filed 2017·Granted Sep 18, 2018·10 cites·12 claims
- 2695US9837403B1Asymmetrical vertical transistorIBM·Filed 2016·Granted Dec 5, 2017·10 cites·11 claims
- 2795US9691765B1Fin type field effect transistors with different pitches and substantially uniform fin revealIBM·Filed 2016·Granted Jun 27, 2017·12 cites·14 claims
- 2895US9685499B1Nanosheet capacitorIBM·Filed 2016·Granted Jun 20, 2017·10 cites·17 claims
- 2995US9679780B1Polysilicon residue removal in nanosheet MOSFETsIBM·Filed 2016·Granted Jun 13, 2017·11 cites·20 claims
- 3094US11495688B2Source and drain epitaxy and isolation for gate structuresIBM·Filed 2021·Granted Nov 8, 2022·2 cites·17 claims
- 3194US10461154B1Bottom isolation for nanosheet transistors on bulk substrateIBM·Filed 2018·Granted Oct 29, 2019·9 cites·16 claims
- 3294US9761450B1Forming a fin cut in a hardmaskIBM·Filed 2016·Granted Sep 12, 2017·8 cites·3 claims
- 3393US11081546B2Isolation structure for stacked vertical transistorsIBM·Filed 2019·Granted Aug 3, 2021·6 cites·20 claims
- 3493US10930734B2Nanosheet FET bottom isolationIBM·Filed 2018·Granted Feb 23, 2021·6 cites·14 claims
- 3593US10615288B1Integration scheme for non-volatile memory on gate-all-around structureIBM·Filed 2018·Granted Apr 7, 2020·7 cites·10 claims
- 3693US9941352B1Transistor with improved air spacerIBM·Filed 2016·Granted Apr 10, 2018·7 cites·20 claims
- 3792US11798852B2Hybrid-channel nano-sheet FETsTESSERA LLC·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
- 3892US9716142B2Stacked nanowiresIBM·Filed 2015·Granted Jul 25, 2017·6 cites·18 claims
- 3991US10957601B2Self-aligned fin recesses in nanosheet field effect transistorsIBM·Filed 2018·Granted Mar 23, 2021·6 cites·15 claims
- 4091US10211288B1Vertical transistors with multiple gate lengthsIBM·Filed 2017·Granted Feb 19, 2019·5 cites·6 claims
- 4191US9837408B1Forming strained and unstrained features on a substrateIBM·Filed 2016·Granted Dec 5, 2017·6 cites·20 claims
- 4291US9824934B1Shallow trench isolation recess process flow for vertical field effect transistor fabricationIBM·Filed 2016·Granted Nov 21, 2017·7 cites·18 claims
- 4390US11195755B2Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistorsIBM·Filed 2020·Granted Dec 7, 2021·2 cites·20 claims
- 4490US10504793B2Hybrid-channel nano-sheet FETsIBM·Filed 2018·Granted Dec 10, 2019·3 cites·19 claims
- 4590US10263075B2Nanosheet CMOS transistorsIBM·Filed 2017·Granted Apr 16, 2019·5 cites·15 claims
- 4689US10930756B2Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gatesIBM·Filed 2020·Granted Feb 23, 2021·2 cites·20 claims
- 4789US10892328B2Source/drain extension regions and air spacers for nanosheet field-effect transistor structuresIBM·Filed 2019·Granted Jan 12, 2021·5 cites·20 claims
- 4888US10103147B1Vertical transport transistors with equal gate stack thicknessesIBM·Filed 2017·Granted Oct 16, 2018·4 cites·16 claims
- 4988US9748381B1Pillar formation for heat dissipation and isolation in vertical field effect transistorsIBM·Filed 2016·Granted Aug 29, 2017·5 cites·20 claims
- 5087US11164958B2Nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regionsIBM·Filed 2020·Granted Nov 2, 2021·2 cites·17 claims
Showing the top 50 of 185 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →