Semiconductor treatment composition and treatment method

Abstract

A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content M K (ppm) and a sodium content M Na (ppm) that satisfy M K /M Na =1×10 −1 to 1×10 4 .

What is claimed is: 
     
       1. A treatment method, comprising:
 treating a wiring board that contains tungsten as a wiring material by using a concentrated semiconductor treatment composition, after subjecting the wiring board to chemical mechanical polishing by using a composition comprising iron ions and peroxides, 
 wherein the concentrated semiconductor treatment composition comprises: 
 potassium; 
 sodium; 
 a water-soluble polymer having a weight average molecular weight of 1,000 to 1,500,000; and 
 a compound A represented by the following general formula (1), 
 wherein the concentrated semiconductor treatment composition has a potassium content M K  (ppm) and a sodium content M Na  (ppm) that satisfy M K /M Na =1×10 −1  to 1×10 4 : 
 
       
         
           
           
               
               
           
         
         wherein each of R 1  to R 4  is a hydrogen atom or an organic group, independently, and M −  is an anion. 
       
     
     
       2. The treatment method according to  claim 1 , wherein the concentrated semiconductor treatment composition is used in a 20 to 500-fold diluted state. 
     
     
       3. The treatment method according to  claim 1 , wherein the concentrated semiconductor treatment composition has a viscosity of less than 5 mPa·s at 25° C. 
     
     
       4. The treatment method according to  claim 1 , wherein the concentrated semiconductor treatment composition further comprises an amino acid. 
     
     
       5. The treatment method according to  claim 1 , wherein the water-soluble polymer in the concentrated semiconductor treatment composition has a weight average molecular weight of 3,000 to 1,200,000. 
     
     
       6. The treatment method according to  claim 1 , wherein the potassium content M K  (ppm) is 1×10 −4  to 5×10 3  ppm, and the sodium content M Na  (ppm) is 1×10 −6  to 1×10 2  ppm. 
     
     
       7. A treatment method, comprising:
 treating a wiring board that contains tungsten as a wiring material by using a semiconductor treatment composition, after subjecting the wiring board to chemical mechanical polishing by using a composition comprising iron ions and peroxides, 
 wherein the semiconductor treatment composition comprises: 
 potassium; 
 sodium; 
 a water-soluble polymer having a weight average molecular weight of 1,000 to 1,500,000; and 
 a compound A represented by the following general formula (1), 
 wherein the semiconductor treatment composition is suitable for being used without being diluted, and 
 the semiconductor treatment composition has a potassium content M K  (ppm) and a sodium content M Na  (ppm) that satisfy M K /M Na =1×10 −1  to 1×10 4 : 
 
       
         
           
           
               
               
           
         
         wherein each of R 1  to R 4  is a hydrogen atom or an organic group, independently, and M −  is an anion. 
       
     
     
       8. The treatment method according to  claim 7 , wherein the semiconductor treatment composition has a viscosity of less than 5 mPa·s at 25° C. 
     
     
       9. The treatment method according to  claim 7 , wherein the semiconductor treatment composition further comprises an amino acid. 
     
     
       10. The treatment method according to  claim 7 , wherein the water-soluble polymer in the semiconductor treatment composition has a weight average molecular weight of 3,000 to 1,200,000. 
     
     
       11. The treatment method according to  claim 7 , wherein the potassium content M K  (ppm) is 1×10 −6  to 5×10 3  ppm, and the sodium content M Na  (ppm) is 1×10 −8  to 1×10 2  ppm.