Semiconductor package with plated metal shielding and a method thereof

Abstract

Methods of manufacturing semiconductor packages with metal-plated shields include roughening surfaces of a molding compound by an abrasion process such that the surfaces have an unnatural surface roughness that is rougher than a natural surface roughness. In one embodiment, the method includes obtaining a molded array including a plurality of dies coupled to a substrate and a molding compound encapsulating the plurality of dies, coating all exposed surfaces of the molding compound with an adhesion promoter material, heating the molded array with an adhesion promoter material such that the adhesion promoter material reacts with a portion of the molding compound, resulting in a baked film, and etching away the baked film, resulting in the molding compound having the roughened surfaces. Preferably, the method also includes depositing a catalyst material on the roughened surfaces before a metal layer is coated on the roughened surfaces to speed up the time for the metal layer to adhere to the roughened surfaces.

What is claimed is: 
     
       1. A method of manufacturing semiconductor devices, comprising:
 obtaining a molded array that includes a package side and an interfacing side, wherein the molded array includes a plurality of dies coupled to a substrate and molding compound encapsulating the plurality of dies, wherein surfaces of the molding compound has have a natural surface roughness; 
 coupling the interfacing side of the molded array with a tape; 
 performing a cut through procedure from the package side to the interfacing side, thereby forming a plurality of singulated semiconductor devices on the tape; 
 performing an abrasion procedure to roughen all surfaces of the molding compound such that, after the abrasion procedure, all surfaces of the molding compound have an unnatural surface roughness that is rougher than the natural surface roughness, wherein the abrasion procedure comprises:
 i. coating all exposed surfaces of the molding compound with an adhesion promoter material; 
 ii. heating the molded array with the adhesion promoter material such that the adhesion promoter material reacts with a portion of the molding compound, resulting in a baked film; and 
 iii. etching away the baked film, resulting in the molding compound having the roughened surfaces; 
 
 adhering a metal layer on the roughened surfaces; and 
 removing the plurality of singulated semiconductor devices from the tape. 
 
     
     
       2. The method of  claim 1 , wherein each of the plurality of singulated semiconductor devices on the tape includes side surfaces of exterior terminals that are substantially aligned with side surfaces of the molding compound. 
     
     
       3. The method of  claim 2 , wherein the adhesion of the metal layer on the roughened surfaces is better than adhesion of the metal layer on the surfaces of the molding compound having the natural surface roughness. 
     
     
       4. The method of  claim 3 , wherein obtaining a molded array includes:
 obtaining the substrate; 
 coupling the plurality of dies to a top surface of the substrate; 
 encapsulating the plurality of dies with the molding compound; 
 etching a portion of a bottom surface of the substrate; and 
 insulation molding etched portions of the substrate. 
 
     
     
       5. The method of  claim 3 , further comprising, after performing the abrasion procedure and before adhering a metal layer, depositing a catalyst material on all surfaces of the molding compound of each of the plurality of singulated semiconductor devices on the tape. 
     
     
       6. The method of  claim 5 , further comprising repeating depositing the catalyst material and adhering a metal layer until a desired metal-plated shield is obtained. 
     
     
       7. The method of  claim 1 , wherein the molding compound comprises fillers and compound resin. 
     
     
       8. A method of manufacturing semiconductor devices, comprising:
 obtaining a substrate; 
 coupling a plurality of dies to a top surface of the substrate; 
 encapsulating the plurality of dies with a molding compound, wherein the molding compound has a natural surface roughness; 
 etching a portion of a bottom surface of the substrate; 
 insulation molding etched portions of the substrate; 
 coupling the bottom surface of the substrate with the etched portions to a tape; 
 performing full singulation cuts, thereby obtaining a plurality of singulated semiconductor devices that is coupled to the tape; 
 roughening surfaces of the molding compound of each of the plurality of singulated semiconductor devices on the tape such that the surfaces have an unnatural surface roughness that is rougher than the natural surface roughness of the molding compound, 
 wherein roughening surfaces of the molding compound comprises: 
 i. coating all exposed surfaces of the molding compound with an adhesion promoter material; 
 ii. heating the adhesion promoter material such that the adhesion promoter material reacts with the exposed surfaces of the molding compound, resulting in a baked film; and 
 iii. etching away the baked film, resulting in the surfaces of the molding compound having the unnatural surface roughness; and 
 depositing a catalyst material on the surfaces of the molding compound of each of the plurality of singulated semiconductor devices on the tape; 
 coating a conductive metal on the catalyst material of each of the plurality of singulated semiconductor devices on the tape; and 
 removing the tape from the plurality singulated semiconductor devices. 
 
     
     
       9. The method of  claim 8 , further comprising repeating depositing the catalyst material and coating the conductive metal until a desired metal-plated shield is obtained. 
     
     
       10. The method of  claim 8 , wherein the performance of the full singulation cuts results in each of the plurality of singulated semiconductors on the tape exposing side surfaces of exterior terminals that are substantially aligned with side surfaces of the molding compound. 
     
     
       11. The method of  claim 8 , wherein the adhesion of the conductive metal on the roughened surfaces is better than adhesion of the metal layer on the surfaces of the molding compound having the natural surface roughness. 
     
     
       12. The method of  claim 8 , wherein the molding compound comprises fillers and compound resin. 
     
     
       13. A method of manufacturing semiconductor devices, comprising:
 obtaining a substrate; 
 coupling a plurality of dies to a top surface of the substrate; 
 encapsulating the plurality of dies with a molding compound, wherein the molding compound has a natural surface roughness; 
 coupling a bottom surface of the substrate to a tape; 
 performing a cut through procedure, thereby forming a plurality of singulated semiconductor devices coupled on the tape; 
 performing an abrasion procedure to roughen all surfaces of the molding compound such that, after the abrasion procedure, all surfaces of the molding compound have an unnatural surface roughness that is rougher than the natural surface roughness, wherein the abrasion procedure comprises:
 i. coating all exposed surfaces of the molding compound with an adhesion promoter material; 
 ii. heating the adhesion promoter material such that the adhesion promoter material reacts with the exposed surfaces of the molding compound, resulting in a baked film; and 
 iii. etching away the baked film; 
 
 adhering a metal layer on the roughened surfaces; and 
 removing the plurality of singulated semiconductor devices from the tape. 
 
     
     
       14. The method of  claim 13 , wherein the performing of the cut through procedure results in each of the plurality of singulated semiconductor devices on the tape exposing side surfaces of exterior terminals that are substantially aligned with side surfaces of the molding compound. 
     
     
       15. The method of  claim 13 , wherein the adhesion of the metal layer on the roughened surfaces is better than adhesion of the metal layer on the surfaces of the molding compound having the natural surface roughness. 
     
     
       16. The method of  claim 13 , further comprising, after performing the abrasion procedure and before adhering the metal layer, depositing a catalyst material on all surfaces of the molding compound of each of the plurality of singulated semiconductor devices on the tape. 
     
     
       17. The method of  claim 16 , further comprising repeating depositing the catalyst material and adhering the metal layer until a desired metal-plated shield is obtained. 
     
     
       18. The method of  claim 13 , wherein the molding compound comprises fillers and compound resin.