Package spark gap structure

Abstract

Embodiments may relate to a microelectronic package with an electrostatic discharge (ESD) protection structure within the package substrate. The ESD protection structure may include a cavity that has a contact of a signal line and a contact of a ground line positioned therein. Other embodiments may be described or claimed.

The invention claimed is: 
     
       1. A microelectronic package comprising:
 a package substrate with a signal line and a ground line; and 
 an electrostatic discharge (ESD) protection structure within the package substrate; 
 wherein the ESD protection structure includes a cavity in a layer of the package substrate; 
 wherein a contact of the signal line and a contact of the ground line are within the cavity and separated by a distance d, wherein the distance d is based on a desired voltage of the spark gap, and wherein the desired voltage is between 2 volts (V) and 10 V; and 
 wherein the signal line and the ground line are at least partially within the cavity and, within the cavity, are separated by a distance D that is greater than the distance d. 
 
     
     
       2. The microelectronic package of  claim 1 , wherein the contact of the signal line is a protrusion from the signal line or the contact of the ground line is a protrusion from the ground line. 
     
     
       3. The microelectronic package of  claim 1 , wherein a charge is to transfer between the contact of the signal line and the contact of the ground line when a charge difference between the contact of the signal line and the contact of the ground line is above a charge threshold. 
     
     
       4. The microelectronic package of  claim 1 , wherein the ESD protection structure includes a plurality of contacts of the signal line and a plurality of contacts of the ground line positioned within the cavity. 
     
     
       5. The microelectronic package of  claim 1 , wherein the ESD protection structure further includes a second cavity in the layer of the package substrate, and wherein a second contact of the signal line and a second contact of the ground line are within the second cavity. 
     
     
       6. The microelectronic package of  claim 1 , wherein the signal line is a via in the package substrate. 
     
     
       7. The microelectronic package of  claim 1 , wherein the distance d is between 0.5 micrometers (“microns”) and 5 microns. 
     
     
       8. A microelectronic package comprising:
 a package substrate with a cavity in a face of the package substrate; 
 a lid positioned over the cavity, wherein the lid provides an airtight seal to the cavity; 
 an electrostatic discharge (ESD) apparatus positioned within the cavity, wherein the ESD apparatus includes a spark gap with a contact of a signal line and a contact of a ground line separated by a distance d; and 
 a lid standoff between the lid and the package substrate, wherein a z-height of the lid standoff is based on a desired value for the distance d. 
 
     
     
       9. The microelectronic package of  claim 8 , wherein the contact of the signal line and the contact of the ground line are elements of a layer of the package substrate. 
     
     
       10. The microelectronic package of  claim 8 , wherein the lid is communicatively coupled with a ground of the microelectronic package. 
     
     
       11. The microelectronic package of  claim 10 , wherein the contact of the ground line is an element of the lid. 
     
     
       12. The microelectronic package of  claim 11 , wherein the lid comprises a second contact of the ground line that is separated by the distance d from a contact of a second signal line. 
     
     
       13. The microelectronic package of  claim 8 , wherein the distance d is based on a desired voltage of the spark gap, and wherein the desired voltage is between 2 volts (V) and 10 V. 
     
     
       14. The microelectronic package of  claim 8 , wherein the distance d is based on a desired voltage of the spark gap, and wherein the desired voltage is between 4 volts (V) and 5 V. 
     
     
       15. A microelectronic package comprising:
 a package substrate with a signal line coupled with a signal pad of the microelectronic package; 
 a die communicatively coupled with the signal line; 
 a ground line positioned between a ground pad of the microelectronic package and the signal line; and 
 an electrostatic discharge (ESD) protection structure within the ground line, wherein the ESD protection structure includes a ground contact communicatively coupled with the ground pad and a signal contact communicatively coupled with the signal line, and wherein the ground contact and the signal contact have a spark gap therebetween and are separated by a distance d, wherein the distance d is based on a desired voltage of the spark gap, and wherein the desired voltage is between 2 volts (V) and 10 V. 
 
     
     
       16. The microelectronic package of  claim 15 , wherein the ground contact or the signal contact have a rounded profile. 
     
     
       17. The microelectronic package of  claim 15 , wherein the ground contact or the signal contact have a pointed profile. 
     
     
       18. The microelectronic package of  claim 15 , wherein the ground contact or the signal contact have a squared profile. 
     
     
       19. The microelectronic package of  claim 15 , wherein the distance d that is between 0.5 micrometers (“microns”) and 5 microns. 
     
     
       20. The microelectronic package of  claim 15 , wherein the distance d that is between 1 micrometer (“micron”) and 2 microns.