Package structure and method of fabricating the same

Abstract

A package structure includes a circuit substrate, a semiconductor package, a thermal interface material, a lid structure and a heat dissipation structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The thermal interface material is disposed on the semiconductor package. The lid structure is disposed on the circuit substrate and surrounding the semiconductor package, wherein the lid structure comprises a supporting part that is partially covering and in physical contact with the thermal interface material. The heat dissipation structure is disposed on the lid structure and in physical contact with the supporting part of the lid structure.

What is claimed is: 
     
       1. A package structure, comprising:
 a circuit substrate; 
 a semiconductor package disposed on and electrically connected to the circuit substrate; 
 a thermal interface material disposed on the semiconductor package; 
 a lid structure disposed on the circuit substrate and surrounding the semiconductor package, wherein the lid structure comprises a supporting part that is partially covering and in physical contact with the thermal interface material; and 
 a heat dissipation structure disposed on the lid structure and in physical contact with the supporting part of the lid structure, wherein the heat dissipation structure is a heat sink comprising:
 fin structures; 
 a fin base supporting the fin structures; 
 a step structure supporting the fin base; and 
 a protruding portion disposed on the step structure, wherein the protruding portion is in physical contact with the thermal interface material. 
 
 
     
     
       2. The package structure according to  claim 1 , wherein the protruding portion is surrounded by the supporting part of the lid structure. 
     
     
       3. The package structure according to  claim 1 , wherein a width of the step structure is smaller than a width of the fin base, and a width of the protruding portion is smaller than the width of the step structure. 
     
     
       4. The package structure according to  claim 1 , wherein the thermal interface material comprises a first thermal interface material having a heat transfer coefficient of greater than 20 W/mK, and a second thermal interface material having a heat transfer coefficient of greater than 3 W/mK and less than 20 W/mK, and wherein the second thermal interface material is surrounding the first thermal interface material. 
     
     
       5. The package structure according to  claim 1 , wherein the lid structure further comprises:
 a sidewall part disposed on the circuit substrate and surrounding the semiconductor package, and wherein the supporting part is disposed on and in physical contact with the sidewall part. 
 
     
     
       6. The package structure according to  claim 5 , wherein the lid structure further comprises:
 a supporting bar disposed on and protruding out from the supporting part, wherein the supporting bar is surrounding and in physical contact with a portion of the heat dissipation structure. 
 
     
     
       7. The package structure according to  claim 1 , wherein the fin structures has a height of H 1 , the fin base has a height of H 2 , the step structure has a height of H 3 , and the protruding portion has a height of H 4 , and wherein H 2 , H 3  and H 4  are smaller than H 1 . 
     
     
       8. The package structure according to  claim 7 , wherein a thickness TH of the thermal interface material is smaller than the heights H 1 , H 2 , H 3  and H 4 . 
     
     
       9. A package structure, comprising:
 a circuit substrate; 
 an interposer structure disposed on and electrically connected to the circuit substrate; 
 a plurality of semiconductor dies disposed on a first surface of the interposer structure and electrically connected to the interposer structure; 
 an insulating encapsulant disposed on the first surface of the interposer structure and surrounding the plurality of semiconductor dies; 
 a lid structure disposed on the circuit substrate and surrounding the interposer structure and the plurality of semiconductor dies, wherein the lid structure comprises a first opening that is partially overlapped with the plurality of semiconductor dies; and 
 a heat dissipation structure disposed on the lid structure, wherein the heat dissipation structure comprises a protruding portion that fills into the first opening of the lid structure, and further comprises a concaved portion surrounding the protruding portion, 
 and wherein the lid structure further comprises a supporting bar protruding towards the concaved portion to surround the protruding portion. 
 
     
     
       10. The package structure according to  claim 9 , further comprising a thermal interface material disposed in between the plurality of semiconductor dies and the heat dissipation structure, wherein the protruding portion that fills into the first opening is in physical contact with the thermal interface material. 
     
     
       11. The package structure according to  claim 10 , wherein the thermal interface material comprises a first thermal interface material having a heat transfer coefficient of greater than 20 W/mK, and a second thermal interface material having a heat transfer coefficient of greater than 3 W/mK and less than 20 W/mK, wherein the second thermal interface material is surrounding the first thermal interface material, and the protruding portion is in physical contact with the first thermal interface material. 
     
     
       12. The package structure according to  claim 9 , wherein the lid structure further comprises a plurality of sectioning parts defining a plurality of sub-openings in the first opening, and wherein a dimension of the plurality of sub-openings corresponds to a dimension of the plurality of semiconductor dies. 
     
     
       13. The package structure according to  claim 9 , wherein the plurality of semiconductor dies comprises a plurality of first semiconductor dies and a plurality of second semiconductor dies, the first opening is overlapped with the plurality of first semiconductor dies, and non-overlapped with the plurality of second semiconductor dies. 
     
     
       14. The package structure according to  claim 13 , wherein the plurality of first semiconductor dies are logic dies, and the plurality of second semiconductor dies are memory dies. 
     
     
       15. The package structure according to  claim 9 , wherein the first opening has a width of WC 1  and a length of LC 1 , and the width WC 1  and the length LC 1  corresponds to a sum of the widths and a sum of the lengths of two of the plurality of semiconductor dies located over a central region of the package structure. 
     
     
       16. A package structure, comprising:
 a circuit substrate; 
 an interposer structure disposed on the circuit substrate; 
 a plurality of first semiconductor dies disposed over a central region of the interposer structure; 
 a plurality of second semiconductor dies disposed over a peripheral region of the interposer structure aside the plurality of first semiconductor dies; 
 a lid structure disposed on the circuit substrate and surrounding the interposer structure, the plurality of first semiconductor dies and the plurality of second semiconductor dies, wherein the lid structure comprises a supporting part that covers the peripheral region while revealing the central region of the interposer structure; and 
 a heat dissipation structure disposed on the lid structure, wherein the heat dissipation structure comprises a protruding portion surrounded by the supporting part of the lid structure,
 and wherein the protruding portion comprises a plurality of protruding sub-portions, and an area of a top surface of each of the plurality of protruding sub-portions substantially corresponds to an area occupied by each of the plurality of first semiconductor dies over the central region of the interposer structure. 
 
 
     
     
       17. The package structure according to  claim 16 , wherein the heat dissipation structure is a heat sink comprising:
 fin structures; 
 a fin base supporting the fin structures; 
 a step structure supporting the fin base; and 
 the protruding portion disposed on the step structure, wherein a height of the protruding portion is smaller than a height of the fin structures. 
 
     
     
       18. The package structure according to  claim 16 , further comprising a thermal interface material disposed in between the plurality of first semiconductor dies and the heat dissipation structure, and in between the plurality of second semiconductor dies and the heat dissipation structure, wherein the protruding portion is in physical contact with the thermal interface material. 
     
     
       19. The package structure according to  claim 18 , wherein the thermal interface material comprises:
 a first thermal interface material in physical contact with the plurality of first semiconductor dies and the protruding portion of the heat dissipation structure; and 
 a second thermal interface material in physical contact with the plurality of second semiconductor dies and the supporting part of the lid structure. 
 
     
     
       20. The package structure according to  claim 16 , wherein the lid structure further comprises a plurality of sectioning parts joined with the supporting part, and separating the plurality of protruding sub-portions from one another.