US11842953B2ActiveUtilityA1

Semiconductor package with wire bond joints and related methods of manufacturing

Assignee: INFINEON TECHNOLOGIES AGPriority: Apr 28, 2021Filed: Apr 28, 2021Granted: Dec 12, 2023

Est. expiryApr 28, 2041(~14.8 yrs left)· nominal 20-yr term from priority

Inventors:Mohd Kahar Bajuri Joel Feliciano Del Rosario Thai Kee Gan Mohd Afiz Hashim Mei Fen Hiew

H10W 72/652H10W 72/60H10W 70/481H10W 20/4421H10W 72/07652H10W 72/627H10W 72/5524H10W 90/766H10W 72/884H10W 90/756H10W 72/871H10W 72/926H10W 72/983H10W 72/07636H10W 72/07631H10W 72/931H10W 72/076H10W 72/016H10W 72/07611H10W 72/07141H10W 72/07131H10W 90/736H10W 72/631H10W 70/466H10W 70/041H10W 72/20H10W 72/50H10W 90/811H10W 72/071H01L 23/49575H01L 23/49562H01L 23/53228H01L 24/40H01L 2224/37147

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Claims

Abstract

A method of attaching a metal clip to a semiconductor die includes: aligning a first bonding region of the metal clip with a first bond pad of the semiconductor die; and while the first bonding region of the metal clip is aligned with the first bond pad of the semiconductor die, forming a plurality of first wire bonds to the first bond pad of the semiconductor die through a plurality of openings in the first bonding region of the metal clip, the plurality of first wire bonds forming a joint between the metal clip and the first bond pad of the semiconductor die. Additional methods and related semiconductor packages produced from such methods are also described.

Claims

exact text as granted — not AI-modified

What is claimed is:

1. A method of attaching a metal clip to a semiconductor die, the method comprising:
aligning a first bonding region of the metal clip with a first bond pad of the semiconductor die; and
while the first bonding region of the metal clip is aligned with the first bond pad of the semiconductor die, forming a plurality of first wire bonds to the first bond pad of the semiconductor die through a plurality of openings in the first bonding region of the metal clip, the plurality of first wire bonds forming a joint between the metal clip and the first bond pad of the semiconductor die.

2. The method of claim 1 , wherein aligning the first bonding region of the metal clip with the first bond pad of the semiconductor die comprises:
seating the first bonding region of the metal clip in an opening of a passivation layer which laterally surrounds the first bond pad of the semiconductor die.

3. The method of claim 1 , wherein aligning the first bonding region of the metal clip with the first bond pad of the semiconductor die comprises:
seating a second bonding region of the metal clip in an alignment feature of a metal lead of a leadframe,
wherein the semiconductor die is attached to a part of the leadframe that is separate and spaced apart from the metal lead.

4. The method of claim 3 , further comprising:
soldering the second bonding region of the metal clip to the metal lead.

5. The method of claim 3 , further comprising:
forming a plurality of second wire bonds to the metal lead through a plurality of openings in the second bonding region of the metal clip, the plurality of second wire bonds forming a joint between the metal clip and the metal lead; and
after forming the plurality of second wire bonds, forming a joint between the plurality of second wire bonds and the metal clip at a side of the metal clip facing away from the metal lead.

6. The method of claim 5 , further comprising:
forming a solder joint between each one of the second wire bonds and the metal clip at the side of the metal clip facing away from the metal lead.

7. The method of claim 5 , further comprising:
forming one or more additional wire bonds between each one of the second wire bonds and the metal clip at the side of the metal clip facing away from the metal lead.

8. The method of claim 1 , wherein aligning the first bonding region of the metal clip with the first bond pad of the semiconductor die comprises:
soldering a second bonding region of the metal clip to a metal lead of a leadframe,
wherein the semiconductor die is attached to a part of the leadframe that is separate and spaced apart from the metal lead.

9. The method of claim 1 , further comprising:
after forming the joint between the metal clip and the first bond pad of the semiconductor die, forming a joint between the plurality of first wire bonds and the metal clip at a side of the metal clip facing away from the semiconductor die.

10. The method of claim 9 , wherein forming the joint between the plurality of first wire bonds and the metal clip at the side of the metal clip facing away from the semiconductor die comprises:
forming a solder joint between each one of the first wire bonds and the metal clip at the side of the metal clip facing away from the semiconductor die.

11. The method of claim 9 , wherein forming the joint between the plurality of first wire bonds and the metal clip at the side of the metal clip facing away from the semiconductor die comprises:
forming one or more additional wire bonds between each one of the first wire bonds and the metal clip at the side of the metal clip facing away from the semiconductor die.

12. The method of claim 1 , wherein the plurality of openings in the first bonding region of the metal clip are countersunk or counterbored for accepting a ball or wedge head of the first wire bonds.

13. The method of claim 1 , wherein the semiconductor die is a power semiconductor die, wherein the first bond pad of the semiconductor die is a source pad of the power semiconductor die, the method further comprising:
forming a wire bond connection to a gate pad of the power semiconductor die which is at the same side of the power semiconductor die as the source pad.

14. A method of attaching a metal clip to a semiconductor die, the method comprising:
forming one or more first wire bonds to a first bond pad of the semiconductor die;
inserting a distal end of each first wire bond through a corresponding opening in a first bonding region of the metal clip; and
after inserting the distal end of each first wire bond through the corresponding opening in the first bonding region of the metal clip, forming a joint between each first wire bond and the metal clip at a side of the metal clip facing away from the semiconductor die.

15. The method of claim 14 , wherein forming the joint between each first wire bond and the metal clip at the side of the metal clip facing away from the semiconductor die comprises:
forming one or more additional wire bonds between each first wire bond and the metal clip at the side of the metal clip facing away from the semiconductor die.

16. The method of claim 14 , wherein forming the joint between each first wire bond and the metal clip at the side of the metal clip facing away from the semiconductor die comprises:
forming a solder joint between each first wire bond and the metal clip at the side of the metal clip facing away from the semiconductor die.

17. The method of claim 14 , wherein the semiconductor die is a power semiconductor die, and wherein the first bond pad of the semiconductor die is a gate pad of the power semiconductor die.

18. The method of claim 14 , wherein the semiconductor die is a power semiconductor die, wherein the first bond pad of the semiconductor die is a source pad of the power semiconductor die, the method further comprising:
before inserting the distal end of each first wire bond through the corresponding opening in the first bonding region of the metal clip, applying solder to the source pad of the power semiconductor; and
forming, via the solder, a joint between the source pad of the power semiconductor and the first bonding region of the metal clip at a side of the metal clip facing the semiconductor die.

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