Method of depositing silicon film and film deposition apparatus

Abstract

To provide a method of depositing a silicon film that can crystallize the silicon film at low temperature and in a short time, and also can deposit the silicon film with high flatness. A method of depositing a silicon film includes supplying a silicon-containing gas on a seed layer, depositing an amorphous silicon film on the seed layer, supplying chlorosilane gas to the amorphous silicon film, and crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film.

What is claimed is: 
     
       1. A method of depositing a silicon film, the method comprising:
 supplying a silicon-containing gas on a seed layer; 
 depositing an amorphous silicon film on the seed layer, wherein the amorphous silicon film is deposited at a first temperature; 
 supplying chlorosilane gas to the amorphous silicon film; 
 crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film, wherein the chlorosilane cap layer is formed at a second temperature higher than the first temperature; and 
 annealing the chlorosilane cap layer and the amorphous silicon film at a third temperature higher than the second temperature. 
 
     
     
       2. The method of depositing a silicon film according to  claim 1 ,
 wherein the first temperature is less than 540° C., and 
 wherein the second temperature is 500° C. or higher and 700° C. or lower. 
 
     
     
       3. The method of depositing a silicon film according to  claim 2 ,
 wherein the first temperature is 450° C. or higher and 500° C. or lower, and 
 wherein the second temperature is 560° C. or higher and 580° ° C. or lower. 
 
     
     
       4. The method of depositing a silicon film according to  claim 1 ,
 wherein the silicon-containing gas is monosilane or disilane, and 
 wherein the chlorosilane gas is dichlorosilane.