Method and apparatus for processing substrates

Abstract

A substrate processing apparatus includes a processing chamber and a gas supply line, wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90° to 180°.

What is claimed is:  
     
         1 . A substrate processing apparatus, comprising: 
 a processing chamber and a gas supply line,    wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and    wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90° to 180°.    
     
     
         2 . The apparatus of  claim 1 , wherein the first gas is NF 3  gas and the second gas includes hydrogen gas and nitrogen gas, ammonia gas or a mixture thereof.  
     
     
         3 . The apparatus of  claim 1 , further comprising a distribution device for distributing the natural oxide film removing gas to flow parallel to the wafer.  
     
     
         4 . The apparatus of  claim 3 , wherein the distribution device includes one or more distribution plates, each having at least one gas injection opening.  
     
     
         5 . A substrate processing apparatus comprising; 
 a processing chamber in which a plurality of wafers are processed at a time;    a remote plasma unit disposed outside the processing chamber for supplying an activated natural oxide film removing gas to the processing chamber; and    a distribution device which distributes the natural oxide film removing gas to flow parallel to the wafers.    
     
     
         6 . The apparatus of  claim 5 , wherein the distribution device includes one or more distribution plates, each having at least one gas injection opening.