Wash water or immersion water used during semiconductor manufacturing

Abstract

A hydrogen dissolving device 2 is connected to a high-purity water processing device 1. Hydrogen is dissolved into the high-purity water in the hydrogen dissolving device 2 to produce hydrogen-dissolved water. The hydrogen-dissolved water is conveyed via a transport line 7 to a wash apparatus 5 or to an immersion apparatus 6. The hydrogen-dissolved water exiting from the transport line 7 inhibits oxidation of semiconductor devices during wash or immersion process.

What is claimed is:  
     
         1 . An apparatus for producing wash water or immersion water for semiconductor devices, said apparatus comprising: 
 a deionized water producing device for producing deionized water;    a hydrogen-dissolved water preparation device for preparing hydrogen-dissolved water by adding, in an air-tight system hydrogen to the deionized water produced by said deionized water producing device; and    a transport line for conveying the hydrogen-dissolved water prepared by the hydrogen-dissolved water preparation device to a wash apparatus or an immersion apparatus used in manufacturing of a semiconductor device, wherein    the hydrogen-dissolved water discharged out of the transport line is made in contact with a semiconductor device in said wash apparatus or said immersion apparatus so that oxidation of said semiconductor device is inhibited.    
     
     
         2 . An apparatus according to  claim 1 , further comprising: 
 a palladium catalyst section upstream of or downstream of said hydrogen-dissolved water preparation device, wherein    said deionized water or said hydrogen-dissolved water is conveyed to said transport line via said palladium catalyst section.    
     
     
         3 . An apparatus according to  claim 1 , further comprising; 
 an alkali solution adding section for adding an alkali solution to said hydrogen-dissolved water, wherein    the oxidation-reduction potential of the hydrogen-dissolved water is lowered through the addition of an alkali solution by said alkali solution adding section.    
     
     
         4 . An apparatus according to  claim 1 , further comprising: 
 a ultraviolet oxidation section for irradiating ultraviolet rays onto said deionized water;    a bypass line for conveying said deionized water while bypassing said ultraviolet oxidation section; and    a switching device for selecting, for supplying to said hydrogen-dissolved water crating device, the deionized water which has passed through said ultraviolet oxidation section or the deionized water supplied through said bypass line.    
     
     
         5 . An apparatus according to  claim 1 , further comprising: 
 a temperature controlling section for lowering the temperature of said deionized water supplied to said hydrogen-dissolved water preparation device.    
     
     
         6 . An apparatus according to  claim 1 , wherein the concentration of dissolved hydrogen of said hydrogen-dissolved water is in a range from 50 μg/L to the saturation solubility.  
     
     
         7 . An apparatus according to  claim 3 , wherein the pH of the hydrogen-dissolved water to which said alkali solution is added is in a range from 7.4 to 9.5.  
     
     
         8 . An apparatus according to  claim 1 , wherein said semiconductor device is a semiconductor device in a formation process of a gate insulated film of a MOS transistor.  
     
     
         9 . An apparatus according to  claim 1 , wherein said semiconductor device is a semiconductor device in a formation process of a contact hole for exposing a silicon surface.  
     
     
         10 . An apparatus according to  claim 1 , wherein said semiconductor device is a semiconductor device in a formation process of a wiring layer made of a metal including copper or in an etching process of an insulated film formed on a wiring made of a metal including copper.  
     
     
         11 . A method for washing or immersing a semiconductor device comprising the steps of: 
 producing deionized water;    preparing hydrogen-dissolved water by adding hydrogen to the produced deionized water in an air-tight system;    conveying the prepared hydrogen-dissolved water to a wash apparatus or an immersion apparatus used in manufacturing of a semiconductor device and washing or immersing the semiconductor device using said hydrogen-dissolved water; and    inhibiting oxidation of said semiconductor device during wash in said wash apparatus or during immersion in said immersion apparatus.    
     
     
         12 . A method according to  claim 11 , wherein 
 a palladium catalyst section is provided upstream of or downstream of said hydrogen-dissolved water preparation device; and    said deionized water or said hydrogen-dissolved water is conveyed to said wash apparatus or to said immersion apparatus via the palladium catalyst section.    
     
     
         13 . A method according to  claim 12 , further comprising the step of adding an alkali solution to said hydrogen-dissolved water to lower the oxidation-reduction potential of said hydrogen-dissolved water.  
     
     
         14 . A method according to  claim 11 , wherein 
 a ultraviolet oxidation section for irradiating ultraviolet rays onto said deionized water and a bypass line for conveying said deionized water while bypassing said ultraviolet oxidation section are provided; and    either the deionized water which has passed through the ultraviolet oxidation section or the deionized water supplied through said bypass line is selected and supplied to said hydrogen-dissolved water preparation section.    
     
     
         15 . A method according to  claim 11 , further comprising the step of lowering the temperature of said deionized water supplied to said hydrogen-dissolved water preaparation section.  
     
     
         16 . A method according to  claim 11 , wherein the concentration of dissolved hydrogen in said hydrogen-dissolved water is adjusted in a range from 50 μg/L to the saturation solubility.  
     
     
         17 . A method according to  claim 13 , wherein the pH of said hydrogen-dissolved water to which said alkali solution is added is in a range from 7.4 to 9.5.  
     
     
         18 . A method according to  claim 11 , wherein said semiconductor device which is washed or immersed is a semiconductor device in a formation process of a gate insulated film of a MOS transistor.  
     
     
         19 . A method according to  claim 11 , wherein said semiconductor device which is washed or immersed is a semiconductor device in a formation process of a contact hole for exposing a silicon surface.  
     
     
         20 . A method according to  claim 11 , wherein said semiconductor device which is washed or immersed is a semiconductor device in a formation process of a wiring layer which is made of a metal including copper or a semiconductor device in an etching process of an insulated film formed over a wiring which is made of a metal including copper.