Semiconductor device and method for manufacturing same

Abstract

A semiconductor device comprises a semiconductor element having an electrode forming surface on which an electrode terminal is formed, an insulating layer made of phenol resin covering the electrode forming surface, and a rewiring pattern connected at one thereof to the electrode terminal and at the other end thereof to an external connecting terminal. During a process for manufacturing the phenol resin is cured at a temperature of 180° C. to 200° C. to form the insulating layer.

1 . A semiconductor device comprising: 
 a semiconductor element having an electrode forming surface on which an electrode terminal is formed;    an insulating layer covering the electrode forming surface of the semiconductor element, the insulating layer being made of phenol resin; and    a rewiring pattern connected at one thereof to the electrode terminal and at the other end thereof to an external connecting terminal.    
     
     
         2 . A semiconductor device as set forth in  claim 1 , further comprising: 
 an overcoat layer for covering said rewiring pattern and said insulating layer, said overcoat layer being made of phenol resin.    
     
     
         3 . A semiconductor device as set forth in  claim 1 , further comprising: 
 a passivation film for covering said electrode forming surface, said passivation film being made of phenol resin.    
     
     
         4 . A semiconductor device as set forth in  claim 1 , wherein said rewiring pattern is provided at the other end thereof with a land and said external connecting terminal is a wire, bent in L-shape, which is connected to said land of the rewiring pattern by wire-bonding.  
     
     
         5 . A process for manufacturing a semiconductor device comprising the following steps of: 
 preparing a semiconductor element having an electrode forming surface on which an electrode terminal is formed;    covering said electrode forming surface of the semiconductor element with a phenol resin so that said electrode is exposed therefrom;    curing said phenol resin at a temperature of 180° C. to 200° C. to form an insulating layer; and    forming a rewiring pattern on said insulating layer in such a manner that at least a part of said rewiring pattern is connected to said electrode terminal.    
     
     
         6 . A process as set forth in  claim 5 , further comprising the following steps of: 
 after said rewiring pattern is formed, covering again said insulating layer including said rewiring pattern with a phenol resin, so that a land part of said rewiring pattern on said insulating layer is exposed from said the formed at the other end of the formed on the said electrode is exposed phenol resin; and    curing again said phenol resin at a temperature of 180° C. to 200° C. to form an overcoat layer for covering said insulating layer including said rewiring pattern.    
     
     
         7 . A process as set forth in  claim 6 , further comprising the following step of: 
 wire-bonding a wire so as to connect one end thereof to said land part of said rewiring pattern and then to bend said wire to form an L-shaped external terminal of said wire.    
     
     
         8 . A process as set forth in  claim 5 , further comprising the following steps of: 
 before said insulating layer is formed, covering said electrode forming surface with a phenol resin to be a passivation film; and    curing said phenol resin at a temperature of 180° C. to 200° C. to form said passivation film so that said electrode terminal is exposed from said passivation film.