Substrate processing apparatus and reaction container

Abstract

A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

What is claimed is:  
     
         1 . A substrate processing apparatus, comprising; 
 a reaction chamber which is to accommodate stacked substrates,    a gas introducing portion, and    a buffer chamber, wherein 
 said gas introducing portion is provided along a stacking direction of said substrates, and introduces substrate processing gas into said buffer chamber,  
 said buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of said substrates, and said processing gas introduced from said gas introducing portion is supplied from said gas-supply openings to said reaction chamber.  
   
     
     
         2 . A substrate processing apparatus as recited in  claim 1 , wherein 
 opening areas of said gas-supply openings provided in said buffer chamber are substantially equal to each other.    
     
     
         3 . A substrate processing apparatus as recited in  claim 1 , wherein 
 said gas introducing portion is provided with a plurality of gas introducing openings along the stacking directions of said substrates.    
     
     
         4 . A substrate processing apparatus as recited in  claim 1 , wherein 
 said gas introducing portion includes a gas-supply tube provided in said buffer chamber, and said gas-supply tube is provided with a plurality of gas introducing openings along the stacking direction of said substrates.    
     
     
         5 . A substrate processing apparatus as recited in  claim 3 , wherein 
 opening areas of said gas introducing openings of said gas introducing portion are increased from an upstream side toward a downstream side.    
     
     
         6 . A substrate processing apparatus as recited in  claim 1 , wherein 
 said gas-supply openings of said buffer chamber are disposed with the same pitch as that of the stacked substrates.    
     
     
         7 . A substrate processing apparatus as recited in  claim 1 , further comprising another buffer chamber.  
     
     
         8 . A substrate processing apparatus as recited in claim  1 , wherein 
 said gas-supply openings of said buffer chamber are provided lower than a position where said substrates are disposed.    
     
     
         9 . A substrate processing apparatus as recited in  claim 1 , wherein 
 said buffer chamber is provided therein with a gas activating member for activating said substrate processing gas.    
     
     
         10 . A substrate processing apparatus as recited in  claim 9 , wherein 
 said gas activating member is electrodes for generating plasma.    
     
     
         11 . A substrate processing apparatus as recited in  claim 10 , wherein 
 each of said electrodes is provided with a protecting member, atmosphere in said buffer chamber and said electrodes are not in contact with each other.    
     
     
         12 . A substrate processing apparatus as recited in  claim 11 , wherein 
 inert gas is charged into said protecting member, or said protecting member is purged with inert gas.    
     
     
         13 . A substrate processing apparatus as recited in  claim 10 , wherein 
 said gas-supply openings of said buffer chamber are provided between said electrodes.    
     
     
         14 . A substrate processing apparatus as recited in  claim 1 , wherein 
 said buffer chamber is provided in said reaction chamber,    said buffer chamber includes first and second wall surfaces,    said gas-supply openings are provided in said first wall surface of said buffer chamber,    said second wall surface of said buffer chamber is a portion of a wall surface of said reaction chamber,    said buffer chamber is provided therein with electrodes for generating plasma, and    at least one of said electrode is brought closer to said first wall surface than said second wall surface.    
     
     
         15 . A substrate processing apparatus as recited in claim  1 , wherein 
 said buffer chamber is provided in said reaction chamber,    said buffer chamber includes first and second wall surfaces,    said gas-supply openings are provided in said first wall surface of said buffer chamber,    said second wall surface of said buffer chamber is a portion of a wall surface of said reaction chamber,    said buffer chamber is provided therein with electrodes for generating plasma,    each of said electrodes is provided with a protecting member, atmosphere in said buffer chamber and said electrodes are not in contact with each other, and    at least one of said electrode is brought closer to said first wall surface than said second wall surface.    
     
     
         16 . A substrate processing apparatus as recited in  claim 1 , wherein 
 said apparatus further comprising a remote plasma unit connected to said gas introducing portion,    said substrate processing gas activated by said remote plasma unit is introduced into said buffer chamber from said gas introducing portion.    
     
     
         17 . A substrate processing apparatus, comprising: 
 a reaction chamber which is to accommodate stacked substrates,    a plurality of buffer chambers, and    a plurality of gas introducing portions for respectively introducing substrate processing gases to said buffer chambers, wherein 
 said buffer chambers respectively include a plurality of gas-supply openings provided in a stacking direction of said substrates, and said substrate processing gas introduced from each of said gas introducing portions is supplied to said reaction chamber from said gas-supply openings of each of said buffer chambers.  
   
     
     
         18 . A reaction container, comprising: 
 a reaction chamber which is to accommodate stacked substrates,    a plurality of buffer chambers, and    a plurality of gas introducing portions for respectively introducing substrate processing gases to said buffer chambers, wherein 
 said buffer chambers respectively include a plurality of gas-supply openings provided in a stacking direction of said substrates, and said substrate processing gas introduced from each of said gas introducing portions is supplied to said reaction chamber from said gas-supply openings of each of said buffer chambers.  
   
     
     
         19 . A reaction container as recited in  claim 18 , wherein 
 at least one of said gas introducing portions is provided along a stacking direction of said substrates.    
     
     
         20 . A reaction container, comprising: 
 a reaction chamber which is to accommodate stacked substrates,    a gas introducing portion, and    a buffer chamber, wherein 
 said gas introducing portion is provided along a stacking direction of said substrates, and introduces substrate processing gas into said buffer chamber,  
 said buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of said substrates, and said processing gas introduced from said gas introducing portion is supplied from said gas-supply openings to said reaction chamber.