Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement

Abstract

A silicon-on-insulator substrate comprises a first silicon substrate having a first crystal orientation, said first substrate having a first polished surface and a first wafer notch; a second silicon substrate having a second crystal orientation different from the first crystal orientation of the first silicon substrate, said second substrate having a second polished surface and a second wafer notch; and the first polished surface of the first silicon substrate being bonded to the second polished surface of the second silicon substrates.

What is claimed is:  
     
         1 . A silicon-on-insulator substrate, comprising: 
 a first silicon substrate having a first crystal orientation, said first substrate having a first polished surface and a first wafer notch;    a second silicon substrate having a second crystal orientation different from the first crystal orientation of the first silicon substrate, said second substrate having a second polished surface and a second wafer notch; and    the first polished surface of the first silicon substrate being bonded to the second polished surface of the second silicon substrates.    
     
     
         2 . The silicon-on-insulator substrate of  claim 1 , wherein the first silicon substrate is bonded to the second silicon substrate such that the first wafer notch is in substantial alignment with the second wafer notch of the second silicon substrate.  
     
     
         3 . The silicon-on-insulator substrate of  claim 1 , wherein the first silicon substrate is bonded to the second silicon substrate such that the first wafer notch is displaced at a predetermined non-zero angle with the second wafer notch of the second silicon substrate.  
     
     
         4 . The silicon-on-insulator substrate of  claim 1 , wherein the first crystal orientation of the first silicon substrate is <100> and the second crystal orientation of the second silicon substrate is <110>.  
     
     
         5 . The silicon-on-insulator substrate of  claim 1 , further comprising a hydrogen bond between the polished surfaces of the first and second silicon substrates.  
     
     
         6 . A semiconductor substrate, comprising: 
 a first substrate having a first crystal orientation, said first substrate having a first polished surface and a first wafer notch;    a second substrate having a second crystal orientation different from the first crystal orientation, said second substrate having a second polished surface and a second wafer notch;    the first polished surface of the first substrate being bonded to the second polished surface of the second substrate after the second polished surface of the second substrate was made hydrophilic, the first and second wafer notches being in substantial alignment with one another.    
     
     
         7 . The substrate of  claim 6 , further comprising a hydrogen-based material between the bonded polished surfaces of the first and second substrates.  
     
     
         8 . The substrate of  claim 6 , wherein the first crystal orientation of the first silicon substrate is <100> and the second crystal orientation of the second silicon substrate is <110>.  
     
     
         9 . A semiconductor device, comprising: 
 a substrate having a first silicon substrate with a first crystal orientation bonded to a second silicon substrate with a second crystal orientation different from the first crystal orientation; and    semiconductor device features built in or on the substrate.    
     
     
         10 . The semiconductor device of  claim 9 , wherein the first silicon substrate is bonded to the second silicon substrate such that a first wafer notch is in substantial alignment with a second wafer notch of the second silicon substrate.  
     
     
         11 . The semiconductor device of  claim 9 , wherein the first silicon substrate is bonded to the second silicon substrate such that a first wafer notch is displaced at a predetermined non-zero angle with a second wafer notch of the second silicon substrate.  
     
     
         12 . The semiconductor device of  claim 9 , wherein the first crystal orientation of the first silicon substrate is <100> and the second crystal orientation of the second silicon substrate is <110>.  
     
     
         13 . The semiconductor device of  claim 9 , further comprising a hydrogen bond between the polished surfaces of the first and second silicon substrates.