Clamshell and small volume chamber with fixed substrate support

Abstract

Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.

1 . A processing chamber adapted for cyclical layer deposition, comprising: 
 a first assembly having a substrate support, the substrate support having a substrate receiving surface;    a gas distribution assembly disposed over the substrate support, the gas distribution assembly having a lid plate and an expanding channel; and    a hinge assembly coupling the first assembly to the gas distribution assembly.    
   
   
       2 . The processing chamber of  claim 1 , wherein the expanding channel has an upper portion extending to a lower portion with an increasing diameter.  
   
   
       3 . The processing chamber of  claim 1 , wherein the lid plate has a lower surface coupled to the expanding channel, at least a portion of the lower surface tapering from the expanding channel to a peripheral portion of the lid plate.  
   
   
       4 . The processing chamber of  claim 1 , wherein the expanding channel has at least one gas inlet positioned substantially horizontally to a longitudinal axis of the lid plate.  
   
   
       5 . The processing chamber of  claim 1 , wherein the gas distribution assembly further comprises a fluid injection assembly.  
   
   
       6 . The processing chamber of  claim 1 , the first assembly further comprising: 
 a pumping ring disposed around a perimeter of the substrate receiving surface, the pumping ring forming at least a portion of a pumping channel and having one or more apertures formed therethrough, wherein the one or more apertures provide fluid communication between the pumping channel and a processing zone between the substrate support and the gas distribution assembly.    
   
   
       7 . The processing chamber of  claim 6 , wherein the pumping ring is shaped and sized so that the one or more apertures are positioned below a plane defined by the substrate receiving surface.  
   
   
       8 . The processing chamber of  claim 6 , wherein the apertures are distributed evenly around the pumping ring.  
   
   
       9 . The processing chamber of  claim 1 , further comprising a gas port below the substrate support, the gas port adapted to provide a bottom purge gas through the gap between the substrate support and the pumping channel.  
   
   
       10 . The processing chamber of  claim 1 , further comprising a resistive heating element disposed in the substrate support.  
   
   
       11 . A processing chamber adapted for cyclical layer deposition, comprising: 
 a first assembly having a substrate support, the substrate support having a substrate receiving surface; and    a pumping ring disposed around a perimeter of the substrate receiving surface, the pumping ring forming at least a portion of a pumping channel and having one or more apertures formed therethrough;    a gas distribution assembly disposed over the substrate support, the gas distribution assembly having a lid plate and an expanding channel, wherein the expanding channel has an upper portion extending to a lower portion with an increasing diameter; and    a hinge assembly coupling the first assembly to the gas distribution assembly.    
   
   
       12 . The processing chamber of  claim 11 , wherein the lid plate has a lower surface coupled to the expanding channel, at least a portion of the lower surface tapering from the expanding channel to a peripheral portion of the lid plate.  
   
   
       13 . The processing chamber of  claim 11 , wherein the expanding channel has at least one gas inlet positioned substantially horizontally to a longitudinal axis of the lid plate.  
   
   
       14 . The processing chamber of  claim 11 , wherein the gas distribution assembly further comprises a fluid injection assembly.  
   
   
       15 . The processing chamber of  claim 11 , wherein the one or more apertures provide fluid communication between the pumping channel and a processing zone between the substrate support and the gas distribution assembly.  
   
   
       16 . The processing chamber of  claim 11 , wherein the pumping ring is shaped and sized so that the one or more apertures are positioned below a plane defined by the substrate receiving surface.  
   
   
       18 . The processing chamber of  claim 11 , wherein the apertures are distributed evenly around the pumping ring.  
   
   
       19 . The processing chamber of  claim 11 , further comprising a resistive heating element disposed in the substrate support.  
   
   
       20 . A processing chamber adapted for cyclical layer deposition, comprising: 
 a first assembly having a substrate support, the substrate support having a substrate receiving surface;    a pumping ring disposed around a perimeter of the substrate receiving surface, the pumping ring forming at least a portion of a pumping channel and having one or more apertures formed therethrough;    a gas distribution assembly disposed over the substrate support, the gas distribution assembly having a lid plate with a lower surface coupled to an expanding channel, at least a portion of the lower surface tapering from the expanding channel to a peripheral portion of the lid plate; and    a hinge assembly coupling the first assembly to the gas distribution assembly.    
   
   
       21 . The processing chamber of  claim 20 , wherein the expanding channel has at least one gas inlet positioned substantially horizontally to a longitudinal axis of the lid plate.  
   
   
       22 . The processing chamber of  claim 20 , wherein the gas distribution assembly further comprises a fluid injection assembly.  
   
   
       23 . The processing chamber of  claim 20 , further comprising a resistive heating element disposed in the substrate support.