Plasma processing apparatus and processing method

Abstract

A plasma processing apparatus includes a vacuum processing vessel constituting a vacuum processing chamber, a processing gas supply unit supplying a processing gas to the vacuum vessel, a plasma generator generating plasma by supplying electromagnetic energy to the vacuum vessel and dissociating the processing gas supplied thereto so as to process a wafer, and a processing chamber surface temperature control unit for controlling the inner surface temperature of the vacuum processing chamber. The control unit controls the inner surface temperature of the vacuum processing chamber based on more than one of (a) an idle time from the termination of an immediately previous lot processing, (b) a processing power of the immediately previous lot processing, (c) a process pressure of the immediately previous lot processing, and (d) a number of wafers being processed of the immediately previous lot processing prior to performing the present wafer processing.

1 . A plasma processing apparatus for providing a plasma processing to a wafer transferred into a vacuum processing vessel, the apparatus comprising: 
 a vacuum processing vessel constituting a vacuum processing chamber;    a processing gas supply unit for supplying a processing gas to the vacuum vessel;    a plasma generating means for generating plasma by supplying electromagnetic energy to the vacuum processing vessel and dissociating the processing gas supplied to the processing chamber so as to process the wafer; and    a processing chamber surface temperature control unit for controlling the inner surface temperature of the vacuum processing chamber, wherein the control unit controls the inner surface temperature of the vacuum processing chamber based on more than one of (a) an idle time from the termination of an immediately previous lot processing, (b) a processing power of the immediately previous lot processing, (c) a process pressure of the immediately previous lot processing, and (d) a number of wafers being processed of the immediately previous lot processing prior to performing the present wafer processing.    
   
   
       2 . A plasma processing apparatus for providing a plasma processing to a wafer transferred into a vacuum processing vessel, the apparatus comprising: 
 a vacuum processing vessel constituting a vacuum processing chamber;    a processing gas supply unit for supplying a processing gas to the vacuum processing vessel;    a plasma generating means for generating plasma by supplying electromagnetic energy to the vacuum processing vessel and dissociating the processing gas supplied to the processing chamber so as to process the wafer; and    a processing chamber surface temperature control unit for controlling the inner surface temperature of the vacuum processing chamber, wherein the control unit controls the inner surface temperature of the vacuum processing chamber based on more than one of (a) an idle time from the termination of an immediately previous lot processing, (b) a processing power of the immediately previous lot processing, (c) a process pressure of the immediately previous lot processing, and (d) a number of wafers being processed of the immediately previous lot processing prior to a pre-lot cleaning process, and further controls the inner surface temperature of the vacuum processing chamber based on the condition of the pre-lot cleaning.