Process gas introducing mechanism and plasma processing device

Abstract

A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.

1 . A processing gas introducing mechanism, provided between a plasma generation unit and a chamber accommodating therein a substrate to be processed of a plasma processing apparatus, for introducing a processing gas into a processing space formed by the plasma generation unit and the chamber, comprising: 
 a gas introducing base disposed on the chamber to support the plasma generation unit, the gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and, in a central portion thereof, a hole part forming one portion of the processing space; and    a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom, the gas introducing plate having plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.    
   
   
       2 . The processing gas introducing mechanism of  claim 1 , wherein the plural gas discharge holes are formed in a line along an inner periphery of the gas introducing plate.  
   
   
       3 . The processing gas introducing mechanism of  claim 1 , wherein the gas introducing path formed in the gas introducing base has a first gas flow path into which a processing gas is introduced; an annular or a semicircular second gas flow path communicating with the first gas flow path; a number of third gas flow paths extending towards the processing space from the second gas flow path; and a fourth gas flow path communicating with the third gas flow paths and the gas discharge holes formed in the gas introducing plate.  
   
   
       4 . The processing gas introducing mechanism of  claim 3 , wherein the fourth gas flow path is formed between the gas introducing base and the gas introducing plate.  
   
   
       5 . The processing gas introducing mechanism of  claim 1 , wherein a step portion is formed in an inner peripheral portion of the gas introducing base; another step portion is formed in an outer peripheral portion of the gas introducing plate; and the gas introducing plate is attached to the gas introducing base by matching said two step portions together.  
   
   
       6 . The processing gas introducing mechanism of  claim 1 , wherein the processing gas introducing mechanism is installed such that it can be detached from the chamber together with the plasma generation unit.  
   
   
       7 . A plasma processing apparatus, comprising: 
 a plasma generation unit for producing a plasma;    a chamber accommodating therein a substrate to be processed; and    a processing gas introducing mechanism, provided between the plasma generation unit and the chamber, for introducing a processing gas for producing a plasma into a processing space formed by the plasma generation unit and the chamber,    wherein the processing gas introducing mechanism includes:    a gas introducing base disposed on the chamber to support the plasma generation unit, the gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and, in a central portion thereof, a hole part forming one portion of the processing space; and    a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom, the gas introducing plate having plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.    
   
   
       8 . The plasma processing apparatus of  claim 7 , wherein the plural gas discharge holes are formed equi-spacedly along an inner periphery of the gas introducing plate.  
   
   
       9 . The plasma processing apparatus of  claim 7 , wherein the gas introducing path formed in the gas introducing base of the processing gas introducing mechanism has a first gas flow path into which a processing gas is introduced; an annular or a semicircular second gas flow path communicating with the first gas flow path; a number of third gas flow paths extending towards the processing space from the second gas flow path; and a fourth gas flow path communicating with the third gas flow paths and the gas discharge holes formed in the gas introducing plate.  
   
   
       10 . The plasma processing apparatus of  claim 9 , wherein the fourth gas flow path is formed between the gas introducing base and the gas introducing plate.  
   
   
       11 . The plasma processing apparatus of  claim 7 , wherein a step portion is formed in an inner peripheral portion of the gas introducing base; another step portion is formed in an outer peripheral portion of the gas introducing plate; and the gas introducing plate is attached to the gas introducing base by matching said two step portions together.  
   
   
       12 . The plasma processing apparatus of  claim 7 , further comprising an attaching and detaching mechanism for attaching the processing gas introducing mechanism and the plasma generation unit to the chamber and detaching them therefrom.  
   
   
       13 . The plasma processing apparatus of  claim 7 , wherein the plasma generation unit has: 
 a dielectric wall;    an antenna provided at an outer side of the dielectric wall; and    a high frequency power supply for supplying a high frequency power to the antenna,    wherein a high frequency power is supplied to the antenna to generate an inductively coupled plasma in the processing space through the dielectric wall.    
   
   
       14 . The plasma processing apparatus of  claim 13 , wherein the dielectric wall is a bell jar, and the antenna is a coil wound in an outer periphery of the bell jar.  
   
   
       15 . A plasma processing apparatus, comprising: 
 a plasma generation unit for producing a plasma;    a chamber accommodating therein a substrate to be processed;    a processing gas introducing mechanism, provided between the plasma generation unit and the chamber and disposed in the chamber to support the plasma generation unit, for introducing a processing gas for producing a plasma into a processing space formed by the plasma generation unit and the chamber; and    an attaching and detaching mechanism for attaching the processing gas introducing mechanism and the plasma generation unit to the chamber and detaching them therefrom.    
   
   
       16 . The plasma processing apparatus of  claim 15 , wherein the attaching and detaching mechanism includes a hinge mechanism for rotating as a unit the processing gas introducing mechanism and the plasma generation unit.  
   
   
       17 . The plasma processing apparatus of  claim 16 , wherein the attaching and detaching mechanism includes a damper mechanism for applying a lifting force to the processing gas introducing mechanism and the plasma generation unit in a rotation direction thereof when the processing gas introducing mechanism and the plasma generation unit are rotated as a unit to be detached.  
   
   
       18 . The plasma processing apparatus of  claim 15 , wherein the attaching and detaching mechanism includes a handle unit for performing attaching and detaching operations on the processing gas introducing mechanism and the plasma generation unit.  
   
   
       19 . The plasma processing apparatus of  claim 15 , wherein the plasma generation unit has: 
 a dielectric wall;    an antenna provided at an outer side of the dielectric wall; and    a high frequency power supply for supplying a high frequency power to the antenna,    wherein a high frequency power is supplied to the antenna to generate an inductively coupled plasma in the processing space through the dielectric wall.    
   
   
       20 . The plasma processing apparatus of  claim 19 , wherein the dielectric wall is a bell jar, and the antenna is a coil wound in an outer periphery of the bell jar.  
   
   
       21 . The plasma processing apparatus of  claim 15 , wherein the processing gas introducing mechanism includes: 
 a gas introducing base disposed on the chamber to support the plasma generation unit, the gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and, in a central portion thereof, a hole part forming one portion of the processing space; and    a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom, the gas introducing plate having plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.    
   
   
       22 . A plasma processing apparatus for performing a plasma processing on a substrate to be processed, the apparatus comprising: 
 a chamber accommodating therein the substrate to be processed;    a plasma generation unit, having a bell jar and an antenna, for producing a plasma inside the bell jar, wherein the bell jar made of a dielectric material is provided at an upper part of the chamber to communicate therewith and the antenna is coiled around an outer side of the bell jar to generate an induced electric field in the bell jar;    a processing gas introducing mechanism, provided between the plasma generation unit and the chamber, for introducing a processing gas for producing a plasma into a processing space formed by the plasma generation unit and the chamber; and    a mounting table for mounting thereon the substrate to be processed provided in the chamber,    wherein, given that an inner diameter of the bell jar is D and an inside measurement of height in a central portion of the bell jar is H, a flatness K defined by a ratio D/H is in the range of 1.60˜9.25.    
   
   
       23 . The plasma processing apparatus of  claim 22 , wherein the bell jar has a cylindrical sidewall portion and a ceiling wall portion provided thereon, and the antenna is wound in the cylindrical sidewall portion.  
   
   
       24 . The plasma processing apparatus of  claim 22 , wherein the number of windings of the antenna is four times or less.  
   
   
       25 . The plasma processing apparatus of  claim 22 , further comprising a mask, made of a dielectric material, for covering the mounting table, 
 wherein the mask has a first region where the substrate to be processed is mounted and a second region around the first region, and the first and the second region are configured to have a same height.    
   
   
       26 . The plasma processing apparatus of  claim 25 , wherein, in the second region, there are provided plural projections for positioning the substrate to be processed at a position of the first region.  
   
   
       27 . The plasma processing apparatus of  claim 25 , wherein, in the first region, there are installed a number of pin holes through which elevating pins for elevating the substrate to be processed from the mounting table penetrate; and groove patterns communicating with the pin holes.  
   
   
       28 . The plasma processing apparatus of  claim 22 , wherein the processing-gas introducing mechanism includes: 
 a gas introducing base disposed on the chamber to support the bell jar, the gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and, in a central portion thereof, a hole part forming one portion of the processing space; and    a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom, the gas introducing plate having plural gas discharge holes communicated with the processing space to discharge thereinto the processing gas from the gas introducing path.    
   
   
       29 . The plasma processing apparatus of  claim 22 , further comprising an attaching and detaching mechanism for attaching the processing gas introducing mechanism and the plasma generation unit to the chamber and detaching them therefrom.  
   
   
       30 . The plasma processing apparatus of  claim 22 , wherein the bell jar is of a multi-radius domed shape formed of a ceiling wall portion whose radius R 1  is in the range of 1600 mm˜2200 mm; a cylindrical sidewall portion; and a corner portion, having a radius R 2  of 20 mm˜40 mm, for connecting the ceiling wall portion with the sidewall portion.  
   
   
       31 . A plasma processing apparatus for performing a plasma processing on a substrate to be processed, the apparatus comprising: 
 a chamber accommodating therein′ the substrate to be processed;    a plasma generation unit, having a bell jar and an antenna, for producing a plasma inside the bell jar, wherein the bell jar made of a dielectric material is provided at an upper part of the chamber to communicate therewith and the antenna is coiled around an outer side of the bell jar to generate an induced electric field in the bell jar;    a processing gas introducing mechanism, provided between the plasma generation unit and the chamber, for introducing a processing gas for producing a plasma into a processing space formed by the plasma generation unit and the chamber; and    a mounting table for mounting thereon the substrate to be processed provided in the chamber,    wherein, given that an inner diameter of the bell jar is D and a distance from a ceiling portion of a central portion of the bell jar to the mounting table is H 1 , a flatness K 1  defined by a ratio D/H 1  is in the range of 0.90˜3.85.    
   
   
       32 . The plasma processing apparatus of  claim 31 , wherein the bell jar has a cylindrical sidewall portion and a ceiling wall portion provided thereon, and the antenna is wound in-the cylindrical sidewall portion.  
   
   
       33 . The plasma processing apparatus of  claim 31 , wherein the number of windings of the antenna is four times or less.  
   
   
       34 . The plasma processing apparatus of  claim 31 , further comprising a mask, made of a dielectric material, for covering the mounting table, 
 wherein the mask has a first region where the substrate to be processed is mounted and a second region around the first region, and the first and the second region are configured to have a same height.    
   
   
       35 . The plasma processing apparatus of  claim 34 , wherein, in the second region, there are provided plural projections for positioning the substrate to be processed at a position of the first region.  
   
   
       36 . The plasma processing apparatus of  claim 34 , wherein, in the first region, there are installed a number of pin holes through which elevating pins for elevating the substrate to be processed from the mounting table penetrate; and groove patterns communicating with the pin holes.  
   
   
       37 . The plasma processing apparatus of  claim 31 , wherein the bell jar is of a multi-radius domed shape formed of a ceiling wall portion whose radius R 1  is in the range of 1600 mm˜2200 mm; a cylindrical sidewall portion; and a corner portion, having a radius R 2  of 20 mm˜40 mm, for connecting the ceiling wall portion with the sidewall portion.  
   
   
       38 . A plasma processing apparatus for performing a plasma processing on a substrate to be processed, the apparatus comprising: 
 a chamber accommodating therein the substrate to be processed;    a plasma generation unit, having a bell jar and an antenna, for producing a plasma inside the bell jar, wherein the bell jar made of a dielectric material is provided at an upper part of the chamber to communicate therewith and the antenna is coiled around an outer side of the bell jar to generate an induced electric field in the bell jar;    a processing gas introducing mechanism, provided between the plasma generation unit and the chamber, for introducing a processing gas for producing a plasma into a processing space formed by the plasma generation unit and the chamber;    a mounting table for mounting thereon the substrate to be processed provided in the chamber; and    a mask, made of a dielectric material, for covering the mounting table and mounting thereon the substrate to be processed, and    wherein the mask has a first region where the substrate to be processed is mounted and a second region around the first region, and the first and the second region are configured to have a same height.    
   
   
       39 . The plasma processing apparatus of  claim 38 , wherein, in the second region, there are provided plural projections for positioning the substrate to be processed at a position of the first region.  
   
   
       40 . The plasma processing apparatus of  claim 38 , wherein, in the first region, there are installed a number of pin holes through which elevating pins for elevating the substrate to be processed from the mounting table penetrate; and groove patterns communicating with the pin holes.  
   
   
       41 . The plasma processing apparatus of  claim 38 , wherein, given that an inner diameter of the bell jar is D and an inside measurement of height in a central portion of the bell jar is H, a flatness K defined by a ratio D/H is in the range of 1.60˜9.25.  
   
   
       42 . The plasma processing apparatus of  claim 38 , wherein, given that an inner diameter of the bell jar is D and a distance from a ceiling portion of a central portion of the bell jar to the mounting table is H 1 , a flatness K 1  defined by a ratio D/H 1  is in the range of 0.90˜3.85.  
   
   
       43 . The plasma processing apparatus of  claim 38 , wherein the bell jar is of a multi-radius domed shape formed of a ceiling wall portion whose radius R 1  is in the range of 1600 mm˜2200 mm; a cylindrical sidewall portion; and a corner portion, having a radius R 2  of 20 mm˜40 mm, for connecting the ceiling wall portion with the sidewall portion.