Substrate plating method and apparatus

Abstract

A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

1 - 11 . (canceled)  
     
     
         12 . A method of plating a substrate to fill a wiring recess formed in the substrate with copper, said method comprising: 
 performing an electrolytic plating process to fill the wiring recess with copper while using an electrolytic plating liquid including:    i) copper sulfate (CuSO 4 .5H 2 O) having a concentration of 100 to 250 g/l,    ii) sulfuric acid (H 2 SO 4 ) having a concentration of 10 to 100 g/l,    iii) chlorine ions having a concentration of 0 to 100 mg/l,    iv) a sulfur compound having a concentration of at least 0.14 to 70 μmol/l,    v) a macromolecular compound having a concentration of 10 to 5000 mg/l, and    vi) a nitrogen compound having a concentration of 0.01 to 100 mg/l.    
     
     
         13 . The method as recited in  claim 12 , wherein the sulfur compound is expressed by a formula  
         X-L-(S) n -L-X  where L is an alkyl group having a carbon number of 1 to 6 which is substituted by a lower alkyl group, a lower alkoxyl group, a hydroxyl group, or a halogen atom; n is an integer; and X is a hydrogen atom, a —SO 3 M group, or a —PO 3 M group; and M indicates a hydrogen atom, an alkali metal atom, or an amino group.    
     
     
         14 . The method as recited in  claim 12 , wherein the macromolecular compound is expressed by a formula  
       
         
           
           
               
               
           
         
         where R 1  indicates a residue of a higher alcohol group having a carbon number of 8 to 25, a residue of an alkyl phenol with an alkyl group having a carbon number of 1 to 25, a residue of an alkyl naphthol with an alkyl group having a carbon number of 1 to 25, a residue of a fatty acid amide having a carbon number of 3 to 22, a residue of an alkylamine having a carbon number of 2 to 4, or a hydroxyl group; R 2  and R 3  indicate a hydrogen atom or a methyl group; and m and k indicate an integer from 1 to 100.