Supercritical fluid-assisted deposition of materials on semiconductor substrates

Abstract

Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.

1 - 108 . (canceled)  
     
     
         109 . A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid and a precursor of the material to be deposited on the substrate, wherein said precursor includes a metal atom, and wherein said material to be deposited comprises a material selected from the group consisting of high-k material, copper diffusion barrier material, nitride material, metal nitride material, barrier layer material, oxynitride barrier layer material, nitride barrier layer material, silicide barrier layer material, and copper seed layer material, with the proviso that when the material to be deposited comprises the copper seed layer material, the precursor comprises at least one copper precursor selected from the group consisting of copper (II) carboxylates, copper (I) cyclopentadienes, copper (I) phenyls, copper (I) amides, and Lewis base adducts of the aforementioned copper (I) species.  
     
     
         110 . The deposition composition of  claim 109 , wherein the supercritical fluid comprises carbon dioxide.  
     
     
         111 . The deposition composition of  claim 109 , wherein the precursor of the material to be deposited on the substrate is present at concentration in a range from about 0.1 wt. % to about 98 wt. %.  
     
     
         112 . The deposition composition of  claim 109 , wherein the material to be deposited comprises a metal nitride material and the deposition composition further comprises nitrogen gas.  
     
     
         113 . The deposition composition of  claim 112 , wherein said metal nitride comprises at least one metal selected from the group consisting of tantalum, titanium, silicon, tungsten and molybdenum.  
     
     
         114 . A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid, a silicon precursor of the material to be deposited on the substrate, and cube monomers, wherein the silicon precursor comprises a siloxane.  
     
     
         115 . The deposition composition of  claim 114 , wherein the cube monomers have epoxy and hexyl groups attached to a same cluster of the monomer.  
     
     
         116 . The deposition composition of  claim 114 , wherein the supercritical fluid comprises carbon dioxide.  
     
     
         117 . The deposition composition of  claim 114 , wherein the silicon precursor is present at concentration in a range from about 0.1 wt. % to about 98 wt. %.  
     
     
         118 . A deposition composition for depositing a low-k material on a substrate, said deposition composition comprising a supercritical fluid, at least one siloxane and a porogen effective in combination with the siloxane to form a porous low k film on the substrate.  
     
     
         119 . The deposition composition of  claim 118 , wherein the supercritical fluid comprises carbon dioxide.  
     
     
         120 . A method of forming a material on a substrate, comprising depositing the material on the substrate from the deposition composition of  claim 109 .  
     
     
         121 . The method of  claim 120 , wherein the precursor of the material to be deposited on the substrate is present at concentration in a range from about 0.1 wt. % to about 98 wt. %.  
     
     
         122 . The method of  claim 120 , wherein the material to be deposited comprises a metal nitride material and the deposition composition further comprises nitrogen gas.  
     
     
         123 . The method of  claim 122 , wherein said metal nitride comprises at least one metal selected from the group consisting of tantalum, titanium, silicon, tungsten and molybdenum.  
     
     
         124 . A method of forming a material on a substrate, comprising depositing the material on the substrate from the deposition composition of  claim 114 .  
     
     
         125 . The method of  claim 124 , wherein the cube monomers have epoxy and hexyl groups attached to a same cluster of the monomer.  
     
     
         126 . The method of  claim 124 , wherein the supercritical fluid comprises carbon dioxide.  
     
     
         127 . A method of forming a material on a substrate, comprising depositing the material on the substrate from the deposition composition of  claim 118 .  
     
     
         128 . The method of  claim 127 , wherein the supercritical fluid comprises carbon dioxide.  
     
     
         129 . The method of  claim 120 , wherein the deposition composition is delivered to a heated substrate for contacting therewith to deposit said material to be deposited on the substrate.  
     
     
         130 . The method of  claim 129 , wherein the deposition composition is continuously delivered to the heated substrate.  
     
     
         131 . The method of  claim 120 , wherein the deposition composition is delivered to the substrate for contacting therewith and at least one deposition process condition is altemed to effect the deposition of the material on the substrate.  
     
     
         132 . The method of  claim 131 , wherein the at least one deposition process condition includes temperature and/or pressure.  
     
     
         133 . The method of  claim 132 , wherein the pressure is decreased to effect rapid expansion of the deposition composition.  
     
     
         134 . A method of manufacturing a semiconductor comprising depositing a material on a substrate using the deposition composition of  claim 114 , wherein said semiconductor comprises said substrate.  
     
     
         135 . A method of manufacturing a semiconductor comprising depositing a material on a substrate using the deposition composition of  claim 118 , wherein said semiconductor comprises said substrate.