US2006225918A1PendingUtilityA1

Electronic device substrate and its fabrication method, and electronic device and its fabrication method

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Assignee: NEC ELECTRONICS CORPPriority: Mar 17, 2005Filed: Mar 16, 2006Published: Oct 12, 2006
Est. expiryMar 17, 2025(expired)· nominal 20-yr term from priority
Y10T29/49139Y10T29/4913Y10T29/49124Y10T29/49155A47L 15/4217Y10T29/49126Y10T29/49165A47L 2501/01Y10T29/49146H10W 72/552H10W 72/5522H10W 74/00H10W 70/655H10W 90/756H10W 90/754H10W 72/5449H10W 72/932H10W 72/07504H10P 72/7424H10P 72/74H10W 74/114H10W 74/019H10W 70/635H10W 70/095
47
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Claims

Abstract

An electronic device substrate is provided with a thin-plate core substrate; a metal electrode provided on the core substrate and electrically connected to an electrode of an electronic component to be packaged thereon; and an electrical insulation layer on which is mounted the electronic component, and which is provided to surround the metal electrode.

Claims

exact text as granted — not AI-modified
1 . An electronic device substrate, comprising: 
 a thin-plate core substrate;    a metal electrode provided on the core substrate and electrically connected to an electrode of an electronic component to be packaged thereon; and    an electrical insulation layer provided to surround the metal electrode.    
     
     
         2 . The electronic device substrate according to  claim 1 , wherein: 
 the core substrate comprises any of copper foil, stainless foil, aluminum or aluminum alloy foil, nickel or nickel alloy foil, or tin or tin alloy foil.    
     
     
         3 . The electronic device substrate according to  claim 1 , wherein: 
 the core substrate comprises a carrier layer formed of a metal as raw material, a release layer formed over the carrier layer, and a metal layer formed over the release layer, and the metal layer is arranged on the electrical insulation layer side.    
     
     
         4 . The electronic device substrate according to  claim 3 , wherein: 
 the metal layer has the smaller bond strength between the metal layer and the carrier layer via the release layer than the bond strength between the metal layer and the electrical insulation layer.    
     
     
         5 . The electronic device substrate according to  claim 3 , wherein: 
 the release layer comprises an organic-based or inorganic-based release layer.    
     
     
         6 . The electronic device substrate according to  claim 3 , wherein: 
 the metal layer comprises copper foil, copper alloy foil, stainless foil, aluminum or aluminum alloy foil, nickel or nickel alloy foil, tin or tin alloy foil.    
     
     
         7 . The electronic device substrate according to  claim 1 , wherein: 
 the core substrate is laminated with a support substrate.    
     
     
         8 . The electronic device substrate according to  claim 7 , wherein: 
 the support substrate comprises an insulation film with an adhesive.    
     
     
         9 . The electronic device substrate according to  claim 1 , wherein: 
 the electrical insulation layer comprises a solder resist or a photo solder resist.    
     
     
         10 . The electronic device substrate according to  claim 1 , wherein: 
 the metal electrode comprises a single layer of an elemental substance of gold, silver, copper, nickel, palladium, tin, rhodium, cobalt, or their alloy, or a stacked layer thereof.    
     
     
         11 . The electronic device substrate according to  claim 1 , wherein: 
 the metal electrode comprises at least 5 μm or more copper or copper alloy plating, or 3 μm or more nickel or nickel alloy plating.    
     
     
         12 . A method for fabricating an electronic device substrate, comprising the steps of: 
 forming an electrical insulation layer on one side of a metallic core substrate;    forming an opening in the electrical insulation layer; and    forming a metal electrode in the opening.    
     
     
         13 . The method for fabricating an electronic device substrate according to  claim 12 , wherein: 
 the core substrate comprises a composite base material with a carrier layer, a release layer, and a metal layer stacked therein.    
     
     
         14 . The method for fabricating an electronic device substrate according to  claim 12 , wherein: 
 the core substrate comprises a composite base material with a carrier layer, a release layer, and a metal layer stacked therein, the composite base material being integral with a support substrate.    
     
     
         15 . The method for fabricating an electronic device substrate according to  claim 14 , wherein: 
 the support substrate comprises an insulation film with an adhesive.    
     
     
         16 . The method for fabricating an electronic device substrate according to  claim 12 , wherein: 
 the electrical insulation layer is bonded to the core substrate by coating or pressure-welding.    
     
     
         17 . The method for fabricating an electronic device substrate according to  claim 12 , wherein: 
 the electrical insulation layer comprises a solder resist or a photo solder resist.    
     
     
         18 . The method for fabricating an electronic device substrate according to  claim 12 , wherein: 
 the core substrate comprises any of copper foil, stainless foil, aluminum or aluminum alloy foil, nickel or nickel alloy foil, or tin or tin alloy foil.    
     
     
         19 . An electronic device, comprising: 
 an electronic component in which is included one or more electrodes for external connection;    one or more metal electrodes to which is mounted the electronic component for being electrically connected to the electrode, and which are formed to pass through the thickness of an electrical insulation layer around the electronic component; and    an insulative covering material that covers the surface of the electronic component and the metal electrode.    
     
     
         20 . The electronic device according to  claim 19 , wherein: 
 the metal electrode is connected to a solder ball.    
     
     
         21 . The electronic device according to  claim 19 , wherein: 
 the metal electrode is electrically connected to the electrode of the electronic component with a metallic thin wire.    
     
     
         22 . The electronic device according to  claim 19 , wherein: 
 the metal electrode is electrically connected to the electrode of the electronic component with a bump.    
     
     
         23 . An electronic device, comprising: 
 an electronic component;    a metal electrode provided in a region that is electrically connected to an electrode of the electronic component; and    an insulative covering material that covers the electronic component and having the metal electrode in a portion on its surface, wherein:    an electrical insulation layer is provided around the metal electrode in the surface of the insulative covering material.    
     
     
         24 . The electronic device according to  claim 23 , wherein: 
 the metal electrode is connected to a solder ball.    
     
     
         25 . The electronic device according to  claim 23 , wherein: 
 the metal electrode is electrically connected to the electrode of the electronic component with a metallic thin wire.    
     
     
         26 . The electronic device according to  claim 23 , wherein: 
 the metal electrode is electrically connected to the electrode of the electronic component with a bump.    
     
     
         27 . A method for fabricating an electronic device, comprising the steps of: 
 mounting an electronic component to an electronic device substrate comprising, on a core substrate, an electrical insulation layer and one or more metal electrodes formed in the electrical insulation layer to pass through the thickness of the electrical insulation layer;    electrically connecting a particular electrode of the electronic component and the metal electrode;    covering, with an insulative covering material, at least an electrical connection portion of the electronic component and the metal electrode; and    removing the core substrate from the electronic device substrate.    
     
     
         28 . The method for fabricating an electronic device substrate according to  claim 27 , wherein: 
 the step of removing the core substrate from the electronic device substrate is performed by chemical dissolution, electrochemical dissolution, mechanical grinding, or a combination thereof.    
     
     
         29 . The method for fabricating an electronic device substrate according to  claim 27 , wherein: 
 when the core substrate comprises plural layers with a release layer inserted therein, the step of removing the core substrate from the electronic device substrate comprises releasing the front side of the core substrate from the surface of the release layer, thereafter removing the metal layer of the core substrate that remains in the electrical insulation layer, by chemical dissolution, electrochemical dissolution, mechanical grinding, or a combination thereof.

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