Electroplating additive for improved reliability

Abstract

Described are methods of and compositions for electrodepositing copper or other metals onto interconnects of a semiconductor substrate from an electroplating composition containing at least one nitrogen-containing additive. The nitrogen-containing additive has a molecular weight of between 10 and 1000, a concentration of between 5.0 and 10.0 milligrams per liter of the electroplating composition. The methods and compositions result in electroplated copper interconnects that have smooth surfaces that are relatively free of pits and humps.

1 . A method for electrodepositing a metal onto at least some conductors of a semiconductor device, the method comprising: 
 (a) providing an electroplating composition containing the metal and at least one nitrogen-containing additive, the nitrogen-containing additive having a concentration of between about 5.0 and 10.0 milligrams per liter of the electroplating composition;    (b) immersing the semiconductor device, including the at least some conductors, in the electroplating composition or in a solution comprising the electroplating composition; and    (c) electroplating the at least some conductors of the semiconductor device.    
   
   
       2 . A method according to  claim 1 , wherein the at least one nitrogen-containing additive is an amine compound.  
   
   
       3 . A method according to  claim 2 , wherein the amine compound is selected from the group consisting of primary amines, secondary amines, tertiary amines, aliphatic amines, cyclo-aliphatic amines, aromatic amines, heterocyclic amines, and combinations thereof.  
   
   
       4 . A method according to  claim 1 , wherein the at least one nitrogen-containing additive is a quaternary ammonium compound.  
   
   
       5 . A method according to  claim 1 , wherein the at least one nitrogen-containing additive comprises C 3 H 4 N 2  or C 5 H 5 N.  
   
   
       6 . A method according to  claim 1 , wherein the at least one nitrogen-containing additive comprises a material that is selected from the group consisting of imidazole, pyridine, and their derivatives.  
   
   
       7 . A method for electrodepositing a metal onto at least some conductors of a semiconductor device, the method comprising providing an electroplating composition containing at least one nitrogen-containing additive having a molecular weight of between about 31 and about 500, wherein the nitrogen-containing additive comprises cyclic molecular chemical structure.  
   
   
       8 . A method according to  claim 7 , wherein the at least one nitrogen-containing additive is an amine compound.  
   
   
       9 . A method according to  claim 8 , wherein the amine compound is selected from the group consisting of cyclo-aliphatic amines, aromatic amines, and heterocyclic amines.  
   
   
       10 . A method according to  claim 7 , wherein the at least one nitrogen-containing additive is a quaternary ammonium compound.  
   
   
       11 . A method according to  claim 7 , wherein the at least one nitrogen-containing additive comprises C 3 H 4 N 2  or C 5 H 5 N.  
   
   
       12 . A method according to  claim 7 , wherein the at least one nitrogen-containing additive is selected from the group consisting of imidazole, pyridine, and their derivatives.  
   
   
       13 . An electroplating material for electrodepositing a conductive layer on a semiconductor substrate, the electroplating material containing at least one nitrogen-containing additive having a concentration of between about 5.0 and 10.0 milligrams per liter of the electroplating material, wherein the at least one nitrogen-containing additive comprises cyclic molecular chemical structure.  
   
   
       14 . An electroplating material according to  claim 13 , wherein the at least one nitrogen-containing additive is an amine compound.  
   
   
       15 . An electroplating material according to  claim 14 , wherein the amine compound is selected from the group consisting of cyclo-aliphatic amines, aromatic amines, and heterocyclic amines.  
   
   
       16 . An electroplating material according to  claim 13 , wherein the at least one nitrogen-containing additive is a quaternary ammonium compound.  
   
   
       17 . An electroplating material according to  claim 13 , wherein the at least one nitrogen-containing additive contains a protonated charge to inhibit organic impurity adsorption or incorporation.  
   
   
       18 . An electroplating material according to  claim 13 , wherein the at least one nitrogen-containing additive comprises C 3 H 4 N 2  or C 5 H 5 N.  
   
   
       19 . An electroplating material according to  claim 13 , wherein the at least one nitrogen-containing additive is selected from a group consisting of imidazole, pyridine, and their derivatives.  
   
   
       20 . An electroplating material according to  claim 13 , wherein the conductive layer is selected from the group consisting of copper, aluminum, silver, and gold.