Integrated system for processing semiconductor wafers

Abstract

An integrated process tool for chemical mechanical processing, cleaning and drying a semiconductor workpiece is provided. The integrated process tool includes a CMP module and a cleaning and drying module. After being processed, the workpiece is transported from the CMP module to the cleaning and drying module using a movable housing. In the cleaning and drying module, a cleaning mechanism is used to clean the workpiece while the workpiece is rotated and held by a support stucture of the movable housing. A drying mechanism of the cleaning and drying module picks up the workpiece from the moveable housing and spin dries it. Throughout the CMP process, cleaning and drying, the processed surface of the wafer faces down.

1 . An integrated wafer processing system for processing a plurality of wafers comprising: 
 at least one electrochemical mechanical polishing (ECMP) station to remove material from a front surface of each of the plurality of wafers;    at least one chemical mechanical polishing station that contains separate wafer entry and wafer exit points; and    a wafer-handling subsystem for transporting each of the plurality of wafers into and out of the at least one electrochemical mechanical polishing station and the at least one chemical mechanical polishing station.    
     
     
         2 . The system of  claim 1 , wherein each of the stations is disposed in a cluster arrangement adjacent the wafer-handling subsystem.  
     
     
         3 . The system of  claim 1 , wherein the wafer-handling subsystem includes at least one wafer-handling robot.  
     
     
         4 . The system of  claim 1 , wherein the wafer-handling subsystem comprises: 
 a first wafer handling robot for removing each of the plurality of wafers from a cassette and placing the wafer in a buffer, and removing each of the plurality of wafers from the buffer and replacing the wafer in the cassette; and    a second wafer handling robot for removing each of the plurality of wafers from the buffer and placing the wafer in one of the stations, and removing each of the plurality of wafers from the station and replacing the wafer in the buffer.    
     
     
         5 . An integrated wafer processing system for processing a plurality of wafers comprising: 
 at least one electrochemical deposition station to deposit metal onto surfaces of the plurality of wafers in sequence;    at least one electrochemical mechanical polishing (ECMP) station for removing metal from surfaces of the plurality of wafers;    an annealing station;    at least one chemical mechanical polishing station that contains separate wafer entry and wafer exit points; and    a wafer-handling subsystem for transporting the plurality wafers into and out of the at least one electrochemical deposition station, the at least one electrochemical mechanical polishing station, the annealing station, and the at least one chemical mechanical polishing station.    
     
     
         6 . The system according to  claim 5 , wherein the annealing station includes an annealing area and a chilling area.  
     
     
         7 . The system of  claim 5 , wherein each of the stations is disposed in a cluster arrangement adjacent the wafer-handling subsystem.