Low cost and low dishing slurry for polysilicon cmp

Abstract

Methods and compositions are provided for planarizing substrate surfaces with low dishing. Aspects of the invention provide methods of using compositions comprising an abrasive selected from the group consisting of alumina and ceria and a surfactant for chemical mechanical planarization of substrates to remove polysilicon.

1 . A composition for polysilicon chemical mechanical polishing, comprising a polymeric surfactant, an oxidizing agent, and an abrasive selected from the group consisting of alumina and ceria.  
   
   
       2 . The composition of  claim 1 , wherein the polymeric surfactant is a polycarboxylate surfactant.  
   
   
       3 . The composition of  claim 1 , wherein the polishing composition comprises from about 0.5 to about 5.0% ceria and from about 1 to about 2.5% polymeric surfactant.  
   
   
       4 . The composition of  claim 3 , wherein the polishing composition comprises about 1% ceria and about 1.6% polymeric surfactant.  
   
   
       5 . The composition of  claim 1 , wherein the polishing composition comprises Hitachi HS-8005, Hitachi HS-8103GPE, and deionized water.  
   
   
       6 . The composition of  claim 5 , wherein the Hitachi HS-8005, Hitachi HS-8103GPE, and deionized water are present in a ratio of from about 1:2.2:0 to about 1:7:2.  
   
   
       7 . The composition of  claim 1 , wherein the polishing composition comprises Hitachi HS-8005, Hitachi HS-8102GP, and deionized water.  
   
   
       8 . The composition of  claim 7 , wherein the Hitachi HS-8005, Hitachi HS-8102GP, and deionized water are present in a ratio of from about 1:2.2:0 to about 1:7:2.  
   
   
       9 . The composition of  claim 1 , wherein the oxidizing agent is hydrogen peroxide.  
   
   
       10 . The composition of  claim 1 , wherein the polishing composition comprises from about 1.5% to about 5% alumina, from about 1% to about 2.5% surfactant, and from about 0.3% to about 1% oxidizing agent.  
   
   
       11 . The composition of  claim 10 , wherein the polishing composition comprises about 1.56% alumina, about 1.38% surfactant, and about 1% oxidizing agent.  
   
   
       12 . The composition of  claim 1 , wherein the polishing composition comprises Hitachi HS-8103GPE, alumina, and hydrogen peroxide.  
   
   
       13 . The composition of  claim 12 , wherein the Hitachi HS-8103GPE, alumina, and hydrogen peroxide are present in a ratio of from about 4.4:2:1 to about 14:2:1.  
   
   
       14 . The composition of  claim 1 , wherein the polishing composition comprises Hitachi HS-8102GP, alumina, and hydrogen peroxide.  
   
   
       15 . The composition of  claim 14 , wherein the Hitachi HS-8102GP, alumina, and hydrogen peroxide are present in a ratio of from about 4.4:2:1 to about 14:2:1.