Integration process of tungsten atomic layer deposition for metallization application

Abstract

In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate having an underlying tungsten layer within a process chamber and depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process. The tungsten-containing barrier layer contains a refractory metal nitride material. The method further provides depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process and depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.

1 . A method for forming a tungsten-containing material on a substrate, comprising: 
 positioning a substrate comprising an underlying tungsten layer within a process chamber;    depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process, wherein the tungsten-containing barrier layer comprises a refractory metal nitride material;    depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process; and    depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.    
   
   
       2 . The method of  claim 1 , wherein the refractory metal nitride material comprises tungsten.  
   
   
       3 . The method of  claim 1 , wherein the tungsten-containing barrier layer has a thickness of about 20 Å or less.  
   
   
       4 . The method of  claim 3 , wherein the thickness is about 10 Å or less.  
   
   
       5 . The method of  claim 1 , wherein the bulk tungsten layer is deposited during the chemical vapor deposition process by exposing the substrate to a gas mixture comprising tungsten hexafluoride and a reducing gas.  
   
   
       6 . The method of  claim 1 , wherein the seed is deposited by a physical vapor deposition process.  
   
   
       7 . The method of  claim 6 , wherein the seed layer comprises tungsten.  
   
   
       8 . The method of  claim 1 , wherein the underlying tungsten layer is part of an interconnect feature.  
   
   
       9 . The method of  claim 8 , wherein the interconnect feature comprises a member selected from the group consisting of plug, via, contact, line, and wire.  
   
   
       10 . A method for forming a tungsten-containing material on a substrate, comprising: 
 positioning a substrate comprising interconnect features within a process chamber, wherein the interconnect features comprise vertical walls, a floor, and an underlying tungsten layer on the floor;    depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process;    depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process; and    filling the interconnect features by depositing a bulk tungsten layer on the substrate during a chemical vapor deposition process.    
   
   
       11 . The method of  claim 10 , wherein the tungsten-containing barrier layer comprises a nitride material.  
   
   
       12 . The method of  claim 10 , wherein the tungsten-containing barrier layer has a thickness of about 20 Å or less.  
   
   
       13 . The method of  claim 12 , wherein the thickness is about 10 Å or less.  
   
   
       14 . The method of  claim 10 , wherein the bulk tungsten layer is deposited during the chemical vapor deposition process by exposing the substrate to a gas mixture comprising tungsten hexafluoride and a reducing gas.  
   
   
       15 . The method of  claim 10 , wherein the seed is deposited by a physical vapor deposition process.  
   
   
       16 . The method of  claim 15 , wherein the seed layer comprises tungsten.  
   
   
       17 . The method of  claim 10 , wherein the interconnect features are a member selected from the group consisting of plug, via, contact, line, and wire.  
   
   
       18 . A method for forming a tungsten-containing material on a substrate, comprising: 
 positioning a substrate comprising interconnect features within a process chamber, wherein each of the interconnect features comprises vertical walls and a floor;    depositing a tungsten-containing barrier layer on the substrate during a cyclical layer deposition process, wherein the tungsten-containing barrier layer comprises a refractory metal material and a refractory metal nitride material;    depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process; and    filling the interconnect features by depositing a bulk tungsten layer on the substrate during a chemical vapor deposition process.    
   
   
       19 . The method of  claim 18 , wherein the refractory metal nitride material comprises tungsten.  
   
   
       20 . The method of  claim 19 , wherein the refractory metal material comprises tungsten.  
   
   
       21 . The method of  claim 20 , wherein the tungsten-containing barrier layer has a thickness of about 20 Å or less.  
   
   
       22 . The method of  claim 21 , wherein the thickness is about 10 Å or less.  
   
   
       23 . The method of  claim 18 , wherein the bulk tungsten layer is deposited during the chemical vapor deposition process by exposing the substrate to a gas mixture comprising tungsten hexafluoride and a reducing gas.  
   
   
       24 . The method of  claim 18 , wherein the seed is deposited by a physical vapor deposition process.  
   
   
       25 . The method of  claim 23 , wherein the seed layer comprises tungsten.  
   
   
       26 . The method of  claim 18 , wherein the interconnect features are a member selected from the group consisting of plug, via, contact, line, and wire.  
   
   
       27 . A method for forming a tungsten-containing material on a substrate, comprising: 
 positioning a substrate comprising interconnect features within a process chamber, wherein the interconnect features comprise vertical walls and a floor;    depositing a tantalum-containing barrier material on the substrate and within the interconnect features, wherein the tantalum-containing barrier material comprises a metallic tantalum layer deposited by a physical vapor deposition process and a tantalum nitride layer deposited by an atomic layer deposition process;    exposing the tantalum-containing barrier material to a silicon-containing compound during chemical treatment process;    depositing a seed layer on the tantalum-containing barrier material during a vapor deposition process; and    filling the interconnect feature by depositing a bulk tungsten layer on the substrate during a chemical vapor deposition process.    
   
   
       28 . The method of  claim 27 , wherein the silicon-containing compound is silane or disilane.