Fin field effect transistor and method for manufacturing fin field effect transistor

Abstract

The invention is directed to a method for manufacturing a fin field effect transistor including a fully silicidated gate electrode. The method is suitable for a substrate including a fin structure, a straddle gate, a source/drain region and a dielectric layer formed thereon, wherein the straddle gate straddles over the fin structure, the source/drain region is located in a portion of the fin structure exposed by the straddle gate and the dielectric layer covers the substrate. The method includes steps of performing a planarization process to remove a portion of the dielectric layer and the first salicide layer until the surface of the straddle gate is exposed and performing a salicide process to convert the straddle gate into a fully silicidated gate electrode.

1 - 10 . (canceled)  
   
   
       11 . A fin field effect transistor comprising a fully silicidated gate electrode suitable for a substrate comprising a fin structure formed thereon, and the fin field effect transistors comprising: 
 a fully silicidated gate electrode straddling over a portion of the fin structure;    a source/drain region, wherein the source/drain region is located in the fin structure exposed by the fully silicidated gate electrode and adjacent to the fully silicidated gate electrode; and    a salicide layer located on the source/drain region.    
   
   
       12 . The fin field effect transistor of  claim 11 , wherein the fully silicidated gate electrode comprises a Cobalt fully silicide gate electrode.  
   
   
       13 . The fin field effect transistor of  claim 11 , wherein the fully silicidated gate electrode comprises a Nickel fully silicide gate electrode.  
   
   
       14 . The fin field effect transistor of  claim 11  further comprising: 
 a cap layer located on the fully silicidated gate electrode.