Inventor · disambiguated record
Wei-Tsun Shiau
Also filed as: SHIAU WEI-TSUN
20 granted patents·19 pending applications·414 citations·filing 2001–2008
95Inventor score
Files withUNITED MICROELECTRONICS CORP23WU CHIH-NING3HWANG JENG-HUEY2LIAO WEN-SHIANG2TEXAS INSTRUMENTS INC2
Top patents by PatentIndex Score
39 records- 0196US7491615B2Method of fabricating strained-silicon transistors and strained-silicon CMOS transistorsUNITED MICROELECTRONICS CORP·Filed 2005·Granted Feb 17, 2009·54 cites·25 claims
- 0295US6888181B1Triple gate device having strained-silicon channelUNITED MICROELECTRONICS CORP·Filed 2004·Granted May 3, 2005·117 cites·10 claims
- 0394US6855588B1Method of fabricating a double gate MOSFET deviceUNITED MICROELECTRONICS CORP·Filed 2003·Granted Feb 15, 2005·92 cites·16 claims
- 0487US6853031B2Structure of a trapezoid-triple-gate FETUNITED MICROELECTRONICS CORP·Filed 2003·Granted Feb 8, 2005·41 cites·13 claims
- 0583US6563175B2NMOS ESD protection device with thin silicide and methods for making sameTEXAS INSTRUMENTS INC·Filed 2001·Granted May 13, 2003·30 cites·15 claims
- 0682US7288828B2Metal oxide semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Oct 30, 2007·11 cites·19 claims
- 0782US7186657B2Method for patterning HfO2-containing dielectricUNITED MICROELECTRONICS CORP·Filed 2005·Granted Mar 6, 2007·6 cites·9 claims
- 0879US7256464B2Metal oxide semiconductor transistor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2005·Granted Aug 14, 2007·7 cites·8 claims
- 0978US7338910B2Method of fabricating semiconductor devices and method of removing a spacerUNITED MICROELECTRONICS CORP·Filed 2005·Granted Mar 4, 2008·6 cites·18 claims
- 1075US7462542B2Method of fabricating semiconductor devices and method of adjusting lattice distance in device channelUNITED MICROELECTRONICS CORP·Filed 2007·Granted Dec 9, 2008·12 cites·12 claims
- 1175US7326622B2Method of manufacturing semiconductor MOS transistor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Feb 5, 2008·4 cites·8 claims
- 1273US7544621B2Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching methodUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jun 9, 2009·5 cites·14 claims
- 1372US7135365B2Method of manufacturing MOS transistorsUNITED MICROELECTRONICS CORP·Filed 2005·Granted Nov 14, 2006·5 cites·13 claims
- 1469US7326617B2Method of fabricating a three-dimensional multi-gate deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Feb 5, 2008·3 cites·11 claims
- 1565US7589385B2Semiconductor CMOS transistors and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2005·Granted Sep 15, 2009·4 cites·19 claims
- 1665US6835623B2NMOS ESD protection device with thin silicide and methods for making sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 28, 2004·10 cites·9 claims
- 1763US7319063B2Fin field effect transistor and method for manufacturing fin field effect transistorUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jan 15, 2008·2 cites·16 claims
- 1855US7338898B2MOS transistor and fabrication thereofUNITED MICROELECTRONICS CORP·Filed 2005·Granted Mar 4, 2008·1 cites·12 claims
- 1953US2007117304A1Method for patterning hfo2-containing dielectricHWANG JENG-HUEY·Filed 2007·Application pending·0 cites
- 2047US2007259503A1Method of fabricating a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 2147US2007164325A1Three-dimensional multi-gate device and fabricating method thereofLIAO WEN-SHIANG·Filed 2007·Application pending·0 cites
- 2247US2007170500A1Semiconductor structure and method for forming thereofUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 2347US2007072378A1Method of manufacturing metal-oxide-semiconductor transistor devicesWU CHIH-NING·Filed 2006·Application pending·0 cites
- 2447US2007122924A1Method of fabricating metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 2547US2007126032A1Fin field effect transistor and method for manufacturing fin field effect transistorLIAO WEN-SHIANG·Filed 2007·Application pending·0 cites
- 2647US2008286976A1Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching methodCHEN CHENG-KUEN·Filed 2008·Application pending·0 cites
- 2747US2007075379A1Metal-oxide-semiconductor transistor deviceWU CHIH-NING·Filed 2006·Application pending·0 cites
- 2846US7423321B2Double gate MOSFET deviceUNITED MICROELECTRONICS CORP·Filed 2004·Granted Sep 9, 2008·2 cites·4 claims
- 2946US2007072358A1Method of manufacturing metal-oxide-semiconductor transistor devicesWU CHIH-NING·Filed 2005·Application pending·0 cites
- 3044US2006019451A1Method for patterning hfo2-containing dielectricHWANG JENG-HUEY·Filed 2004·Application pending·0 cites
- 3144US2007090491A1Semiconductor structure with silicon on insulatorUNITED MICROELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 3244US2006286730A1Semiconductor structure and method for forming thereofLIU ALEX LIU YI-CHENG·Filed 2005·Application pending·0 cites
- 3343US7145208B2MOS transistor having a work-function-dominating layerUNITED MICROELECTRONICS CORP·Filed 2004·Granted Dec 5, 2006·2 cites·5 claims
- 3443US2006099763A1Method of manufacturing semiconductor mos transistor deviceLIU YI-CHENG·Filed 2004·Application pending·0 cites
- 3541US2007082445A1Metal-gate cmos device and fabrication method of making sameYANG CHIH-WEI·Filed 2006·Application pending·0 cites
- 3639US2006011949A1Metal-gate cmos device and fabrication method of making sameYANG CHIH-WEI·Filed 2005·Application pending·0 cites
- 3739US2007224745A1Semiconductor device and fabricating method thereofCHANG HUI-CHEN·Filed 2006·Application pending·0 cites
- 3837US2004195622A1Semiconductor structure with silicon on insulatorUNITED MICROELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 3928US2006228843A1Method of fabricating semiconductor devices and method of adjusting lattice distance in device channelLIU ALEX·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →