Inventor · disambiguated record
Kuan-Yang Liao
Also filed as: LIAO KUAN Y · LIAO KUAN-YANG
44 granted patents·4 pending applications·911 citations·filing 1985–2007
98Inventor score
Files withUNITED SILICON INC19UNITED MICROELECTRONICS CORP14HUGHES AIRCRAFT CO9CHANG CHEN CHI P1LEE CHUNG-JU1
Top patents by PatentIndex Score
48 records- 0193US4847111APlasma-nitridated self-aligned tungsten system for VLSI interconnectionsHUGHES AIRCRAFT CO·Filed 1988·Granted Jul 11, 1989·88 cites·13 claims
- 0292US4645562ADouble layer photoresist technique for side-wall profile control in plasma etching processesHUGHES AIRCRAFT CO·Filed 1985·Granted Feb 24, 1987·125 cites·25 claims
- 0385US6114238ASelf-aligned metal nitride for copper passivationUNITED SILICON INC·Filed 1998·Granted Sep 5, 2000·82 cites·16 claims
- 0481US7214988B2Metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2005·Granted May 8, 2007·8 cites·9 claims
- 0578US6020606AStructure of a memory cellUNITED SILICON INC·Filed 1998·Granted Feb 1, 2000·39 cites·16 claims
- 0678US6001716AFabricating method of a metal gateUNITED SILICON INC·Filed 1998·Granted Dec 14, 1999·40 cites·3 claims
- 0778US5389575ASelf-aligned contact diffusion barrier methodHUGHES AIRCRAFT CO·Filed 1993·Granted Feb 14, 1995·62 cites·5 claims
- 0875US7462542B2Method of fabricating semiconductor devices and method of adjusting lattice distance in device channelUNITED MICROELECTRONICS CORP·Filed 2007·Granted Dec 9, 2008·12 cites·12 claims
- 0975US7326622B2Method of manufacturing semiconductor MOS transistor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Feb 5, 2008·4 cites·8 claims
- 1075US6069037AMethod of manufacturing embedded DRAMUNITED SILICON INC·Filed 1998·Granted May 30, 2000·37 cites·22 claims
- 1174US5994197AMethod for manufacturing dynamic random access memory capable of increasing the storage capacity of the capacitorUNITED SILICON INC·Filed 1999·Granted Nov 30, 1999·34 cites·20 claims
- 1274US5028564AEdge doping processes for mesa structures in SOS and SOI devicesCHANG CHEN CHI P·Filed 1989·Granted Jul 2, 1991·43 cites·26 claims
- 1372US7135365B2Method of manufacturing MOS transistorsUNITED MICROELECTRONICS CORP·Filed 2005·Granted Nov 14, 2006·5 cites·13 claims
- 1469US5407841ACBiCMOS fabrication method using sacrificial gate polyHUGHES AIRCRAFT CO·Filed 1992·Granted Apr 18, 1995·33 cites·11 claims
- 1566US4920403ASelective tungsten interconnection for yield enhancementHUGHES AIRCRAFT CO·Filed 1989·Granted Apr 24, 1990·31 cites·16 claims
- 1665US4961822AFully recessed interconnection scheme with titanium-tungsten and selective CVD tungstenLIAO KUAN Y·Filed 1989·Granted Oct 9, 1990·27 cites·20 claims
- 1763US7319063B2Fin field effect transistor and method for manufacturing fin field effect transistorUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jan 15, 2008·2 cites·16 claims
- 1862US5260227AMethod of making a self aligned static induction transistorHUGHES AIRCRAFT CO·Filed 1992·Granted Nov 9, 1993·22 cites·7 claims
- 1960US6350682B1Method of fabricating dual damascene structure using a hard maskUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 26, 2002·25 cites·20 claims
- 2059US6180477B1Method of fabricating field effect transistor with silicide sidewall spacersUNITED SILICON INC·Filed 1999·Granted Jan 30, 2001·18 cites·10 claims
- 2157US6010943AMethod of fabricating a cylindrical capacitorUNITED SILICON INC·Filed 1998·Granted Jan 4, 2000·17 cites·18 claims
- 2256US4767721ADouble layer photoresist process for well self-align and ion implantation maskingHUGHES AIRCRAFT CO·Filed 1986·Granted Aug 30, 1988·22 cites·25 claims
- 2354US6235596B1Method for manufacturing a MOS device with multiple threshold voltagesUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 22, 2001·14 cites·5 claims
- 2450US6111293ASilicon-on-insulator MOS structureUNITED SILICON INC·Filed 1998·Granted Aug 29, 2000·12 cites·16 claims
- 2549US7196019B2Method of removing spacers and fabricating MOS transistorUNITED MICROELECTRONICS CORP·Filed 2004·Granted Mar 27, 2007·2 cites·8 claims
- 2647US7595234B2Fabricating method for a metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Sep 29, 2009·0 cites·22 claims
- 2747US6100142AMethod of fabricating sub-quarter-micron salicide polysiliconUNITED SILICON INC·Filed 1999·Granted Aug 8, 2000·10 cites·21 claims
- 2847US2007126032A1Fin field effect transistor and method for manufacturing fin field effect transistorLIAO WEN-SHIANG·Filed 2007·Application pending·0 cites
- 2946US6294314B2Method of fabricating an opening with deep ultra-violet photoresistUNITED SILICON INC·Filed 1998·Granted Sep 25, 2001·12 cites·18 claims
- 3044US6175135B1Trench contact structure of silicon on insulatorUNITED SILICON INC·Filed 1998·Granted Jan 16, 2001·8 cites·4 claims
- 3143US7220647B2Method of cleaning wafer and method of manufacturing gate structureUNITED MICROELECTRONICS CORP·Filed 2005·Granted May 22, 2007·0 cites·23 claims
- 3243US6225642B1Buried channel vertical double diffusion MOS deviceUNITED SILICON INC·Filed 1998·Granted May 1, 2001·8 cites·13 claims
- 3343US5491365ASelf-aligned ion implanted transition metal contact diffusion barrier apparatusHUGHES AIRCRAFT CO·Filed 1994·Granted Feb 13, 1996·12 cites·6 claims
- 3443US2006099763A1Method of manufacturing semiconductor mos transistor deviceLIU YI-CHENG·Filed 2004·Application pending·0 cites
- 3542US5989976AFabrication method for a field emission display emitterUNITED SILICON INC·Filed 1998·Granted Nov 23, 1999·5 cites·19 claims
- 3641US6130011AMethod of fabricating implantation maskUNITED SILICON INC·Filed 1998·Granted Oct 10, 2000·6 cites·11 claims
- 3741US5479047ASelf-aligned bipolar transistor with very thin dielectric layer interfacing between poly and active areaHUGHES AIRCRAFT CO·Filed 1993·Granted Dec 26, 1995·12 cites·5 claims
- 3840US6110795AMethod of fabricating shallow trench isolationUNITED SILICON INC·Filed 1998·Granted Aug 29, 2000·8 cites·7 claims
- 3939US6391708B1Method of manufacturing DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 21, 2002·7 cites·27 claims
- 4039US6077771AMethod for forming a barrier layerUNITED SILICON INC·Filed 1998·Granted Jun 20, 2000·7 cites·19 claims
- 4138US6191041B1Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 1999·Granted Feb 20, 2001·6 cites·20 claims
- 4238US2006110688A1Etching process compatible with DUV lithographyLEE CHUNG-JU·Filed 2004·Application pending·0 cites
- 4337US6329243B2Method to form crown capacitor for high density DRAMUNITED MICROELECTRONICS CORP·Filed 2000·Granted Dec 11, 2001·0 cites·6 claims
- 4433US6051153AEtching methodUNITED SILICON INC·Filed 1998·Granted Apr 18, 2000·3 cites·13 claims
- 4532US6214659B1Method to crown capacitor for high density DRAMUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 10, 2001·1 cites·23 claims
- 4632US6179919B1Apparatus for performing chemical vapor depositionUNITED SILICON INC·Filed 1998·Granted Jan 30, 2001·2 cites·2 claims
- 4730US6162731AMethod of defining a conductive layerUNITED SILICON INC·Filed 1999·Granted Dec 19, 2000·0 cites·17 claims
- 4828US2006228843A1Method of fabricating semiconductor devices and method of adjusting lattice distance in device channelLIU ALEX·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →