Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition

Abstract

Silicon nitride film is formed on substrate ( 112 ) by feeding trisilylamine and ammonia into a CVD reaction chamber ( 11 ) that contains a substrate ( 112 ). The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber ( 11 ). This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.

1 . A method for producing silicon oxynitride films by thermal chemical vapor deposition comprising: 
 a) feeding a trisilylamine gas, an ammonia gas, and an oxygen-containing gas into a chemical vapor deposition reaction chamber that contains at least one substrate; and    b) forming a silicon oxynitride film on said at least one substrate by reacting said gases under predetermined temperature and pressure conditions, wherein the predetermined temperature is equal to or lower than 600° C.    
     
     
         2 . The method of  claim 1 , wherein said oxygen-containing gas is at least one component selected from the group consisting of: O 2 , O 3 , H 2 O, H 2 O 2 , NO, NO 2 , and N 2 O.  
     
     
         3 . A method for producing silicon oxynitride films by thermal chemical vapor deposition, comprising: 
 a) feeding a trisilylamine gas and at least one additional gas containing both oxygen and nitrogen into a chemical vapor deposition reaction chamber that contains at least one substrate; and    b) forming a silicon oxynitride film on said at least one substrate by reacting said gases under predetermined temperature and pressure conditions, wherein the predetermined temperature is equal to or lower than 600° C.    
     
     
         4 . The method of  claim 3 , wherein said oxygen and nitrogen gas is at least one component selected from the group consisting of NO, NO 2 , and N 2 O.  
     
     
         5 . A method for producing silicon oxynitride films by thermal chemical vapor deposition comprising: 
 a) feeding at least one trisilylamine gas, at least one ammonia gas, and at least one oxygen-containing gas into a chemical vapor deposition reaction chamber that contains at least one substrate; and    b) forming at least one silicon oxynitride film on said at least one substrate by reacting said gases under predetermined temperature and pressure conditions, wherein the predetermined temperature is equal to or lower than 600° C.    
     
     
         6 . The method of  claim 5 , wherein said oxygen-containing gas is at least one component selected from the group consisting of: O 2 , O 3 , H 2 O, H 2 O 2 , NO, NO 2 , and N 2 O.  
     
     
         7 . A method for producing silicon oxynitride films by thermal chemical vapor deposition, comprising: 
 a) feeding at least one trisilylamine gas and at least one additional gas containing both oxygen and nitrogen into a chemical vapor deposition reaction chamber that contains at least one substrate; and    b) forming at least one silicon oxynitride film on said at least one substrate by reacting said gases under predetermined temperature and pressure conditions, wherein the predetermined temperature is equal to or lower than 600° C.    
     
     
         8 . The method of  claim 7 , wherein said oxygen and nitrogen gas is at least one component selected from the group consisting of NO, NO 2 , and N 2 O.  
     
     
         9 . A method for producing silicon oxynitride-containing film by thermal chemical vapor deposition comprising: 
 a) feeding a trisilylamine-containing gas, an ammonia-containing gas, and an oxygen-containing gas into a chemical vapor deposition reaction chamber that contains at least one substrate; and    b) forming a silicon oxynitride-containing film on said at least one substrate by reacting said gases under predetermined temperature and pressure conditions, wherein the predetermined temperature is equal to or lower than 600° C.    
     
     
         10 . The method of  claim 9 , wherein said oxygen-containing gas is at least one component selected from the group consisting of; O 2 , O 3 , H 2 O, H 2 O 2 , NO, NO 2 , and N 2 O.  
     
     
         11 . A method for producing silicon oxynitride-containing films by thermal chemical vapor deposition, comprising: 
 a) feeding a trisilylamine-containing gas and at least one additional gas containing both oxygen and nitrogen into a chemical vapor deposition reaction chamber that contains at least one substrate; and    b) forming a silicon oxynitride-containing film on said at least one substrate by reacting said gases under predetermined temperature and pressure conditions, wherein the predetermined temperature is equal to or lower than 600° C.    
     
     
         12 . The method of  claim 11 , wherein said oxygen-containing and nitrogen-containing gas is at least one component selected from the group consisting of NO, NO 2 , and N 2 O.  
     
     
         13 . A method for producing silicon oxynitride-containing films by thermal chemical vapor deposition comprising: 
 a) feeding at least one trisilylamine-containing gas, at least one ammonia-containing gas, and at least one oxygen-containing gas into a chemical vapor deposition reaction chamber that contains at least one substrate; and    b) forming at least one silicon oxynitride-containing film on said at least one substrate by reacting said gases under predetermined temperature and pressure conditions.    
     
     
         14 . The method of  claim 13 , wherein said oxygen-containing gas is at least one component selected from the group consisting of: O 2 , O 3 , H 2 O, H 2 O 2 , NO, NO 2 , and N 2 O.  
     
     
         15 . A method for producing silicon oxynitride-containing films by thermal chemical vapor deposition, comprising: 
 a) feeding at least one trisilylamine-containing gas and at least one additional gas containing both oxygen and nitrogen into a chemical vapor deposition reaction chamber that contains at least one substrate; and    b) forming at least one silicon oxynitride-containing film on said at least one substrate by reacting said gases under predetermined temperature and pressure conditions, wherein the predetermined temperature is equal to or lower than 600° C.    
     
     
         16 . The method of  claim 15 , wherein said oxygen-containing and nitrogen-containing gas is at least one component selected from the group consisting of NO, NO 2 , and N 2 O.