Substrate processing apparatus and method

Abstract

A substrate processing apparatus can perform an electrolytic processing, which is different from a common, conventional etching, to remove (clean off) a conductive material (film) formed on or adhering to a bevel portion, etc. of a substrate, or process a peripheral portion of a substrate through an electrochemical action. The substrate processing apparatus includes: an electrode section having a plurality of electrodes which are laminated with insulators being interposed, and having a holding portion which is to be opposed to a peripheral portion of a substrate; an ion exchanger disposed in the holding portion of the electrode section; a liquid supply section for supplying a liquid to the holding position of the electrode section; and a power source for applying a voltage to the electrodes of the electrode section so that the electrodes alternately have different polarities.

1 - 13 . (canceled)  
   
   
       14 . A substrate processing apparatus for processing a substrate, comprising: 
 a processing tool facing across a first film and a second film for removing the first film and the second film simultaneously from an entire surface of a substrate,    wherein the first film is formed on the surface of the substrate, and the second film is formed on the first film so as to form a step between a peripheral portion and an effective device portion of the substrate by the first film and the second film.    
   
   
       15 . The substrate processing apparatus according to  claim 14 , wherein said substrate processing apparatus comprises an electrolytic processing apparatus.  
   
   
       16 . The substrate processing apparatus according to  claim 15 , wherein said electrolytic processing apparatus comprises: 
 a processing electrode brought into contact with or close to the substrate;    a feeding electrode for feeding electricity to the substrate;    a fluid supply section for supplying a fluid between the substrate and one of the processing electrode and feeding electrode; and    a power source for applying a voltage between the processing electrode and the feeding electrode.    
   
   
       17 . The substrate processing apparatus according to  claim 16 , further comprises an ion exchanger disposed in at least one of the space between the substrate and the processing electrode, and the space between the substrate and the feeding electrode.  
   
   
       18 . The substrate processing apparatus according to  claim 16 , wherein said fluid is pure water, a liquid having an electric conductivity of not more than 500 μS/cm, or an electrolysis solution.  
   
   
       19 . The substrate processing apparatus according to  claim 18 , wherein said pure water is ultrapure water.  
   
   
       20 . The substrate processing apparatus according to  claim 14 , wherein said substrate processing apparatus comprises a chemical etching apparatus.  
   
   
       21 . A substrate processing method comprising: 
 preparing a substrate on which a first film is formed and a second film is formed on the first film so as to form a step between a peripheral portion and an effective device portion of the substrate by the first film and the second film;    facing a processing tool across the first film and the second film; and    removing the first film and the second film simultaneously from the entire surface of the substrate.    
   
   
       22 . The substrate processing method according to  claim 21 , wherein the removal of the first film and the second film is carried out by electrolytic processing.  
   
   
       23 . The substrate processing method according to  claim 22 , wherein said electrolytic processing comprises: 
 bringing a processing electrode close to a substrate while feeding electricity from a feeding electrode to the substrate;    supplying a fluid between the substrate and one of the processing electrode and feeding electrode; and    applying a voltage between the processing electrode and the feeding electrode so as to remove the first film and the second film simultaneously from the entire surface of the substrate by a predetermined thickness.    
   
   
       24 . The substrate processing method according to  23 , further comprises: 
 disposing an ion exchanger in at least one of the space between the substrate and the processing electrode, and the space between the substrate and the feeding electrode.    
   
   
       25 . The substrate processing method according to  claim 23 , wherein said fluid is pure water, a liquid having an electric conductivity of not more than 500 μS/cm, or an electrolysis solution.  
   
   
       26 . The substrate processing method according to  claim 23 , wherein said pure water is ultrapure water.  
   
   
       27 . The substrate processing method according to  claim 21 , wherein the removal of the first film and the second film is carried out by chemical etching.