Sensor semiconductor device

Abstract

A sensor semiconductor device is proposed. A plurality of metal bumps and a sensor chip are mounted on a substrate. A dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically connected to the metal bumps and the sensor chip. Thus, the sensor chip is electrically connected to the substrate via the circuit layer and the metal bumps. The dielectric layer is formed with an opening for exposing a sensor region of the sensor chip. A light-penetrable lid covers the opening of the dielectric layer, such that light is able to penetrate the light-penetrable lid to reach the sensor region and activate the sensor chip. A plurality of solder balls are mounted on a surface of the substrate free of mounting the sensor chip, for electrically connecting the sensor chip to an external device.

1 . A sensor semiconductor device, comprising: 
 at least one substrate having a first surface and a corresponding second surface;    a plurality of metal bumps mounted on the first surface of the substrate;    a sensor chip having an active surface and a corresponding non-active surface, wherein the active surface of the sensor chip is formed with a sensor region and a plurality of electrode pads, and the non-active surface of the sensor chip is mounted on the first surface of the substrate;    a dielectric layer applied on the substrate, the metal bumps and the sensor chip, wherein the dielectric layer is formed with a plurality of first openings corresponding in position to the metal bumps and the electrode pads of the sensor chip and a second opening corresponding in position to the sensor region of the sensor chip;    a circuit layer formed on the dielectric layer, and electrically connected to the metal bumps and the electrode pads of the sensor chip; and    a light-penetrable lid for covering the second opening of the dielectric layer corresponding to the sensor region of the sensor chip.    
   
   
       2 . The sensor semiconductor device of  claim 1 , further comprising a plurality of solder balls implanted on the second surface of the substrate.  
   
   
       3 . The sensor semiconductor device of  claim 1 , further comprising a circuit build-up structure formed on the circuit layer that is electrically connected to the metal bumps and the electrode pads of the sensor chip.  
   
   
       4 . The sensor semiconductor device of  claim 1 , wherein at least one substrate comprises at least one single substrate, a matrix of substrates, or a strip of substrates.  
   
   
       5 . The sensor semiconductor device of  claim 1 , wherein the light-penetrable lid is mounted on the circuit layer to cover the second opening of the dielectric layer.  
   
   
       6 . The sensor semiconductor device of  claim 1 , which is a chip-scale packaged sensor semiconductor device.  
   
   
       7 . The sensor semiconductor device of  claim 1 , wherein the metal bumps are gold bumps or solder bumps.  
   
   
       8 . The sensor semiconductor device of  claim 1 , wherein the light-penetrable lid is made of glass or transparent paste.