Apparatus and Method for Thermally Controlled Processing of Microelectronic Workpieces

Abstract

Apparatus and method for thermally controlled processing of microelectronic workpieces with liquids. An apparatus in accordance with and embodiment of the invention includes a process vessel configured to carry a processing liquid, such as an electroless processing liquid. The vessel has a thermally transmissive wall for transferring heat to and/or from the processing liquid within. A heat transfer device, such as a reservoir that receives processing liquid spilling over from the process vessel, transfers heat to or from the processing liquid within the process vessel. The heat transfer device can also transfer heat to or from an internal or external heat source, such as a conduit carrying a heat transfer fluid, or an electrical resistance heater. The interaction between the microelectronic workpiece and the processing liquid can be further controlled by controlling the rate at which the microelectronic workpiece rotates and/or the manner in which the microelectronic workpiece is introduced to and/or withdrawn from the processing liquid.

1 - 10 . (canceled)  
   
   
       11 . A method for processing a microelectronic workpiece, comprising: 
 supporting a microelectronic workpiece in contact with a processing liquid in a vessel;    passing at least a portion of the processing liquid from the vessel; and    transferring heat to or from the processing liquid in the vessel through a heat transmissive wall of the vessel.    
   
   
       12 . The method of  claim 11  wherein the vessel is a first vessel and wherein transferring heat to or from the processing liquid in the first vessel includes receiving at least some of the processing liquid from the first vessel in a second vessel disposed outwardly from the first vessel, and transferring heat to or from the processing liquid in the second vessel through the heat transmissive wall of the first vessel.  
   
   
       13 . The method of  claim 11  wherein transferring heat to the processing liquid in the vessel includes transferring heat from a coil disposed at least proximate to the vessel, the coil being coupleable to a source of a heat transfer fluid.  
   
   
       14 . The method of  claim 11  wherein transferring heat to the processing liquid in the vessel includes transferring heat from an electrical resistance heater positioned at least proximate to the vessel.  
   
   
       15 . The method of  claim 11 , further comprising selecting the processing liquid to include an electroless processing liquid.  
   
   
       16 - 27 . (canceled)  
   
   
       28 . A method for processing a microelectronic workpiece, comprising: 
 supporting a microelectronic workpiece in contact with a processing liquid in a first vessel;    passing at least a portion of the processing liquid from the first vessel;    receiving at least part of the processing liquid from the first vessel in a second vessel disposed outwardly from the first vessel; and    transferring heat between at least some of the processing liquid in the second vessel and at least some of the processing liquid in the first vessel wherein the processing liquid in the second vessel is in thermal communication with the first vessel.    
   
   
       29 . The method of  claim 28 , further comprising transferring at least a portion of the processing liquid from the second vessel to the first vessel.  
   
   
       30 . The method of  claim 28  wherein transferring heat includes transferring heat to a wall of the first vessel, then from the wall to the processing liquid in the first vessel.  
   
   
       31 . The method of  claim 28  wherein supporting a microelectronic workpiece in contact with a processing liquid in a first vessel includes supporting the microelectronic workpiece in contact with an electroless processing liquid.  
   
   
       32 . The method of  claim 28  wherein supporting a microelectronic workpiece in contact with a processing liquid in a first vessel includes supporting the microelectronic workpiece in contact with an electroless processing liquid, and wherein the method further comprises electrolessly depositing material on the microelectronic workpiece.  
   
   
       33 . The method of  claim 28 , further comprising transferring heat to or from the processing liquid with a heat exchanger positioned in thermal communication with at least one of the first and second vessels.  
   
   
       34 . The method of  claim 28 , further comprising transferring heat to or from the processing liquid with a heat exchanger positioned in thermal communication with at least one of the first and second vessels, and wherein the heat exchanger includes a resistive electrical heater disposed in the second vessel.  
   
   
       35 . The method of  claim 28 , further comprising transferring heat to or from the processing liquid with a heat exchanger positioned in thermal communication with at least one of the first and second vessels by passing a heat transfer fluid through a fluid conduit disposed in the second vessel.  
   
   
       36 . The method of  claim 28 , further comprising: 
 removing a quantity of the processing liquid in the second vessel from the second vessel;    directing a first part of the quantity of the processing liquid removed from the second vessel back to the second vessel; and    directing a second part of the quantity of the processing liquid removed from the second vessel to the first vessel.    
   
   
       37 . The method of  claim 28 , further comprising: 
 directing a portion of the processing liquid into the first vessel through a convoluted flow passage passing through the second vessel; and    transferring heat from or to the processing liquid in the second vessel to or from the portion of the processing liquid passing through the convoluted flow passage.    
   
   
       38 . The method of  claim 28 , further comprising: 
 directing the processing liquid through at least one entrance port of a diffuser;    directing the processing liquid from the at least one entrance port to a plenum region of the diffuser;    directing a first portion of the processing liquid from the plenum region, through at least one primary flow passage, through a primary exit port disposed annularly inwardly from the plenum region and toward the microelectronic workpiece; and    directing a second portion of the processing liquid from the plenum region, through at least one secondary flow passage through at least one secondary exit port disposed annularly outwardly from the primary exit port, and toward the microelectronic workpiece, the at least one secondary exit port being smaller than the primary exit port.    
   
   
       39 . The method of  claim 28 , further comprising: 
 carrying the microelectronic workpiece with a support member movably positioned proximate to the first vessel; and    moving the support member relative to the first vessel to contact the microelectronic workpiece with the processing liquid in the first vessel.    
   
   
       40 - 44 . (canceled)  
   
   
       45 . A method for processing a microelectronic workpiece, comprising: 
 supporting a microelectronic workpiece in contact with a processing liquid in a first vessel;    passing at least a portion of the processing liquid into a second vessel disposed outwardly from the first vessel;    transferring heat between the processing liquid in the second vessel and the processing liquid in the first vessel; and    transferring heat to or from at least some of the processing liquid in at least one of the first and second vessels with a heat exchanger positioned in thermal contact with the at least one vessel.    
   
   
       46 . The method of  claim 45 , further comprising transferring at least some of the processing liquid from the second vessel to the first vessel.  
   
   
       47 . The method of  claim 45  wherein transferring heat to or from at least some of the processing liquid includes heating at least some of the processing liquid in the second vessel with an electrical resistance heater disposed in the second vessel.  
   
   
       48 . The method of  claim 45  wherein transferring heat to or from at least some of the processing liquid includes passing a heat transfer fluid through a conduit disposed in the second vessel.  
   
   
       49 . The method of  claim 45  wherein transferring heat between the processing liquid in the second vessel includes transferring heat through at least one heat conductive wall of the first vessel.  
   
   
       50 . The method of  claim 45 , further comprising selecting the processing liquid to induce an electroless processing liquid.  
   
   
       51 - 55 . (canceled)  
   
   
       56 . A method for processing a microelectronic workpiece, comprising: 
 supporting a microelectronic workpiece in contact with a processing liquid in a first vessel;    passing at least a portion of the processing liquid from the first vessel to a second vessel disposed outwardly from the first vessel;    transferring heat between at least some of the processing liquid in the second vessel and the processing liquid in the first vessel; and    transferring heat between a third vessel disposed outwardly from the second vessel and the processing liquid in the second vessel.    
   
   
       57 . The method of  claim 56 , further comprising transferring at least some of the processing liquid from the second vessel to the first vessel.  
   
   
       58 . The method of  claim 56  wherein transferring heat between a third vessel and the processing liquid in the second vessel includes transferring heat from a third vessel disposed annularly around the second vessel.  
   
   
       59 . The method of  claim 56  wherein transferring heat between a third vessel and the processing liquid in the second vessel includes transferring heat from a conduit coiled around a wall of the second vessel.  
   
   
       60 . The method of  claim 56  wherein supporting a microelectronic workpiece in contact with a processing liquid in the first vessel includes supporting the microelectronic workpiece in contact with an electroless processing liquid.  
   
   
       61 - 75 . (canceled)  
   
   
       76 . A method for processing a microelectronic workpiece, comprising: 
 carrying a plurality of processing liquids in a corresponding plurality of source vessels;    transferring heat to or from the plurality of processing liquids;    sequentially directing the plurality of processing liquids into a process vessel through a valve device;    supporting a microelectronic workpiece in contact with at least one of the processing liquids in the process vessel; and    transferring heat to or from the processing liquids in the process vessel through a heat transmissive wall of the processing vessel.    
   
   
       77 . The method of  claim 76  wherein sequentially directing the plurality of processing liquids through a valve device includes directing the processing liquids through a single multi-port valve.  
   
   
       78 . The method of  claim 76  wherein sequentially directing the plurality of processing liquids through a valve device includes directing the processing liquids through a plurality of coupled valves.  
   
   
       79 . The method of  claim 76  wherein sequentially directing the plurality of processing liquids through a valve device includes directing at least one electroless processing liquid.  
   
   
       80 - 82 . (canceled)  
   
   
       83 . A method for processing microelectronic workpieces, comprising: 
 introducing at least a first quantity of a processing liquid into a vessel, the first quantity of the processing liquid having a first temperature;    supporting a first microelectronic workpiece in contact with the first quantity of the processing liquid in the vessel;    processing the first microelectronic workpiece in the vessel;    removing the first microelectronic workpiece from the vessel when the processing liquid has a second temperature lower than the first temperature;    replacing the first quantity of processing liquid with a second quantity of processing liquid, the second quantity of processing liquid having at least approximately the first temperature;    supporting a second microelectronic workpiece in contact with the second quantity of the processing liquid in the vessel; and    processing the second microelectronic workpiece in the vessel.    
   
   
       84 . The method of  claim 83 , further comprising selecting the first and second quantities of the processing liquid to include an electroless processing liquid.  
   
   
       85 . The method of  claim 83  wherein the vessel includes a first vessel, and wherein the method further comprises: 
 passing at least a portion of the processing liquid from the first vessel;    receiving at least part of the processing liquid from the first vessel in a second vessel disposed outwardly from the first vessel; and    transferring heat from at least some of the processing liquid in the second vessel to at least some of the processing liquid in the first vessel.    
   
   
       86 - 90 . (canceled)  
   
   
       91 . A method for processing microelectronic workpieces, comprising: 
 introducing a first quantity of an electroless processing liquid into a vessel;    supporting a first microelectronic workpiece in contact with the first quantity of the electroless processing liquid in the vessel;    processing the first microelectronic workpiece in the vessel;    removing the first microelectronic workpiece from the vessel;    removing the first quantity of the electroless processing liquid from the vessel after processing only the first microelectronic workpiece;    introducing a second quantity of the electroless processing liquid into the vessel;    supporting a second microelectronic workpiece in contact with the second quantity of the electroless processing liquid in the vessel;    processing the second microelectronic workpiece in the vessel;    removing the second microelectronic workpiece from the vessel; and    removing the second quantity of the electroless processing liquid from the vessel after processing only the second microelectronic workpiece.    
   
   
       92 . The method of  claim 91 , further comprising heating at least one of the first and second quantities of the electroless processing liquid with a heat transfer device positioned in thermal contact with a wall of the vessel.  
   
   
       93 . The method of  claim 91  wherein processing the first microelectronic workpiece includes electrolessly applying a conductive material to the first microelectronic workpiece.  
   
   
       94 . The method of  claim 91 , further comprising heating the first quantity of the electroless processing liquid to a first temperature and heating the second quantity of the electroless processing liquid to a second temperature approximately the same as the first temperature.  
   
   
       95 - 121 . (canceled)  
   
   
       122 . A method for directing a processing liquid toward a microelectronic workpiece, comprising: 
 receiving a processing liquid in at least one entrance port of a diffuser;    directing the processing liquid from the at least one entrance port to a plenum region of the diffuser;    directing a first portion of the processing liquid from the plenum region, through at least one primary flow passage, through a primary exit port disposed annularly inwardly from the plenum region and toward a microelectronic workpiece; and    directing a second portion of the processing liquid from the plenum region, through at least one secondary flow passage, through at least one secondary exit port disposed annularly outwardly from the primary exit port, and toward the microelectronic workpiece the at least one secondary exit port being smaller than the primary exit port.    
   
   
       123 . The method of  claim 122  wherein directing the first portion of the electroless processing liquid includes directing the first portion at a first flow rate, and wherein directing the second portion of the processing liquid includes directing the second portion at a second flow rate, the first flow rate being from about 20% to about 50% of a total flow rate for the first and second portions together.  
   
   
       124 . The method of  claim 122  wherein the at least one secondary exit port is one of a plurality of secondary exit ports, further wherein directing the first portion of the processing liquid includes directing the first portion at a first flow rate, and wherein directing the second portion of the processing liquid includes directing the second portion through the plurality of secondary exit ports at a second flow rate, the first flow rate being from about 20% to about 50% of a total flow rate for the first and second portions together.  
   
   
       125 . The method of  claim 122  wherein the diffuser includes a diffuser body and a cup disposed outwardly from the diffuser body, and wherein directing the processing liquid from the at least one entrance port to a plenum region includes directing the processing liquid into a plenum region defined at least in part by an outwardly facing surface of the diffuser body and an inwardly facing surface of the cup.  
   
   
       126 . The method of  claim 122 , further comprising selecting the processing liquid to include an electroless processing liquid.  
   
   
       127 . A method for processing a microelectronic workpiece, comprising: 
 positioning a microelectronic workpiece in thermal communication with a processing liquid while the microelectronic workpiece is spaced apart from the processing liquid;    transferring heat between the processing liquid and the microelectronic workpiece while the microelectronic workpiece is proximate to and spaced apart from the processing liquid; and    contacting the microelectronic workpiece with the processing liquid to transfer material to, from, or both to and from the microelectronic workpiece after transferring between the processing liquid and the microelectronic workpiece while the microelectronic workpiece is proximate to and spaced apart from the processing liquid.    
   
   
       128 . The method of  claim 127 , further comprising selecting the processing liquid to include an electroless processing liquid.  
   
   
       129 . The method of  claim 127 , further comprising electrolessly adding conductive material to the microelectronic workpiece while contacting the microelectronic workpiece with the processing liquid.  
   
   
       130 . The method of  claim 127 , further comprising heating the processing liquid to a temperature of from about 60° C. to about 80° C.  
   
   
       131 . The method of  claim 127 , wherein positioning the microelectronic workpiece in thermal communication with the processing liquid includes supporting the microelectronic workpiece in a stationary position over a free surface of the processing liquid.  
   
   
       132 . The method of  claim 127 , wherein positioning the microelectronic workpiece in thermal communication with the processing liquid includes supporting the microelectronic workpiece in a stationary position over a free surface of the processing liquid for about 60 seconds.  
   
   
       133 . The method of  claim 127  wherein transferring heat between the processing liquid and the microelectronic workpiece includes transferring heat from the processing liquid to the microelectronic workpiece.  
   
   
       134 . A method for processing a microelectronic workpiece, comprising: 
 contacting a microelectronic workpiece with a processing liquid to transfer material to, from or both to and from the microelectronic workpiece;    withdrawing the microelectronic workpiece from contact with the processing liquid while the microelectronic workpiece remains in thermal communication with the processing liquid; and    transferring heat between the microelectronic workpiece and a region adjacent to the microelectronic workpiece while transferring heat between the processing liquid and the microelectronic workpiece, and while the microelectronic workpiece is proximate to and spaced apart from the processing liquid.    
   
   
       135 . The method of  claim 134 , further comprising selecting the processing liquid to include an electroless processing liquid.  
   
   
       136 . The method of  claim 134 , further comprising electrolessly adding conductive material to the microelectronic workpiece while contacting the microelectronic workpiece with the processing liquid.  
   
   
       137 . The method of  claim 134 , further comprising heating the processing liquid to a temperature of from about 60 degrees C. to about 80 degrees C.  
   
   
       138 . The method of  claim 134 , wherein withdrawing the microelectronic workpiece includes supporting the microelectronic workpiece in a stationary position over a free surface of the processing liquid.  
   
   
       139 . The method of  claim 134  wherein transferring heat between the microelectronic workpiece and the region adjacent to the microelectronic workpiece includes cooling the microelectronic workpiece.  
   
   
       140 . A method for controlling an interaction between a microelectronic workpiece and an adjacent processing liquid during processing, comprising: 
 contacting a microelectronic workpiece with a processing liquid; and    controlling a distribution of material added to the microelectronic workpiece during processing by controlling a rate at which the microelectronic workpiece rotates while the microelectronic workpiece contacts the processing liquid.    
   
   
       141 . The method of  claim 140 , further comprising selecting the processing liquid to include an electroless processing liquid.  
   
   
       142 . The method of  140  claim wherein controlling a rate at which the microelectronic workpiece rotates includes controlling the rate to be about 50 rpm to obtain an at least approximately uniform distribution.  
   
   
       143 . The method of  claim 140  wherein controlling a distribution of material added to the microelectronic workpiece includes adding material to a peripheral region of the microelectronic workpiece at a first rate and adding material to a central region of the microelectronic workpiece at a second rate, with the second rate being less than the first rate.  
   
   
       144 . The method of  claim 140  wherein controlling a distribution of material added to the microelectronic workpiece includes adding material to a peripheral region of the microelectronic workpiece at a first rate and adding material to a central region of the microelectronic workpiece at a second rate by controlling a spin rate of the microelectronic workpiece to be about 100 rpm, wherein the second rate is less than the first rate.  
   
   
       145 . The method of  claim 140  wherein controlling a distribution of material added to the microelectronic workpiece includes selecting the rate at which the microelectronic workpiece rotates from a first rate and a second rate, wherein at the first rate, material is uniformly added to both a central region of the microelectronic workpiece and a peripheral region of the workpiece, and at the second rate, material is added more rapidly to the peripheral region than to the central region.  
   
   
       146 . The method of  claim 140  wherein adding material to the microelectronic workpiece includes adding cobalt and/or a cobalt alloy to the microelectronic workpiece.  
   
   
       147 . The method of  claim 140  wherein adding material to the microelectronic workpiece includes adding a barrier layer material to an electrically conductive portion of the microelectronic workpiece.  
   
   
       148 . A method for controlling an interaction between a microelectronic workpiece and an adjacent processing liquid during processing, comprising: 
 contacting a microelectronic workpiece with a processing liquid; and    controlling a temperature distribution at a face of the microelectronic workpiece during processing by controlling a rate at which the microelectronic workpiece rotates while the microelectronic workpiece contacts the processing liquid.    
   
   
       149 . The method of  claim 148 , further comprising selecting the processing liquid to include an electroless processing liquid.  
   
   
       150 . The method of  claim 148 , further comprising: 
 rotating the microelectronic workpiece in a vessel;    exiting at least a portion of the processing liquid from the vessel as circumferential forces generated by the rotating microelectronic workpiece direct the portion of the processing liquid outwardly; and    introducing additional processing liquid to the vessel to make up for the portion of processing quid exited from the vessel.    
   
   
       151 . The method of  claim 148 , further comprising selecting the rate at which the microelectronic substrate rotates to be about 20 rpm.  
   
   
       152 . The method of  claim 148  wherein controlling a temperature distribution at a face of the microelectronic workpiece includes selecting the rate at which the microelectronic workpiece rotates from a first rate and a second rate, wherein at the first rate, the face of the microelectronic workpiece has a first temperature distribution after a selected elapsed time, and at the second rate, the face of the microelectronic workpiece has a second temperature distribution more uniform than the first temperature distribution after the selected elapsed time.  
   
   
       153 . The method of  claim 148 , further comprising adding material to the microelectronic workpiece by contacting the microelectronic workpiece with the processing liquid.  
   
   
       154 . The method of  claim 148 , further comprising adding a barrier layer material to an electrically conductive portion of the microelectronic workpiece by contacting the microelectronic workpiece with the processing liquid.