Methods for patterning indium tin oxide films

Abstract

A method of patterning an indium tin oxide film includes the steps of forming a cap layer over the indium tin oxide film and subjecting exposed areas of the indium tin oxide film to a water plasma.

1 . A method of patterning an indium tin oxide film, the method comprising the steps of:
 forming a cap layer over the indium tin oxide film;   forming a photoresist layer over the cap layer;   patterning the photoresist layer to expose selected areas of the cap layer;   removing the exposed selected areas of the cap layer to expose selected areas of the indium tin oxide film;and   subjecting the exposed selected areas of the indium tin oxide film to a plasma phase etchant comprising water.   
     
     
         2 . The method of  claim 1 , wherein the cap layer comprises an oxide. 
     
     
         3 . The method of  claim 1 , wherein the subjecting step is performed at a pressure between about 0.5 Torr and about 5.0 Torr. 
     
     
         4 . The method of  claim 1 , wherein the subjecting step is performed at a temperature between about 200° C. and about 300° C. 
     
     
         5 . The method of  claim 1 , wherein the water is provided in a process gas at a flow rate of between about 200 sccm and about 1500 sccm. 
     
     
         6 - 12 . (canceled) 
     
     
         13 . The method of  claim 1 , wherein the plasma phase etchant comprises water plasma.