Supercritical fluid-assisted deposition of materials on semiconductor substrates

Abstract

Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.

1 .- 165 . (canceled)  
   
   
       166 . A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid (SCF) and a siloxane in combination with one of an alkyl silane or a porogen.  
   
   
       167 . The deposition composition of  claim 166 , wherein the SCF comprises a fluid selected from the group consisting of carbon dioxide, oxygen, argon, krypton, xenon, ammonia, methane, ethane, methanol, ethanol, isopropanol, dimethyl ketone, sulfur hexafluoride, carbon monoxide, dinitrogen oxide, forming gas, hydrogen, and mixtures thereof.  
   
   
       168 . The deposition composition of  claim 166 , wherein the supercritical fluid comprises carbon dioxide.  
   
   
       169 . The deposition composition of  claim 166 , wherein the composition further comprises an additional component selected from the group consisting of co-solvents, surfactants, co-reactants, diluents, deposition-enhancing agents, and combinations thereof.  
   
   
       170 . The deposition composition of  claim 166 , wherein the alkylsilane comprises a species selected from the group consisting of trimethylsilane and tetramethylsilane.  
   
   
       171 . The deposition composition of  claim 166 , wherein the siloxane comprises a sub-species selected from the group consisting of alkylsiloxanes and cyclosiloxanes.  
   
   
       172 . The deposition composition of  claim 171 , wherein the siloxane comprises a species selected from the group consisting of tetramethylcyclotetrasiloxane (TMCTS) and octamethyltetracyclosiloxane (OMCTS).  
   
   
       173 . The deposition composition of  claim 166 , further comprising at least one co-solvent, wherein said co-solvent comprises a solvent selected from the group consisting of: methanol, ethanol, isopropyl alcohol, N-methylpyrrolidone, N-octylpyrrolidone, N-phenylpyrrolidone, dimethylsulfoxide, sulfolane, catechol, ethyl lactate, acetone, butyl carbitol, monoethanolamine, butyrol lactone, diglycol amine, γ-butyrolactone, butylene carbonate, ethylene carbonate, and propylene carbonate.  
   
   
       174 . The deposition composition of  claim 166 , further comprising at least one surfactant, wherein said at least one surfactant comprises a species selected from the group consisting of an anionic surfactant, a neutral surfactant, a cationic surfactant, and a zwitterionic surfactant.  
   
   
       175 . The deposition composition of  claim 174 , wherein said at least one surfactant comprises a surfactant selected from the group consisting of acetylenic alcohols, acetylenic diols, long alkyl chain secondary and tertiary amines, and fluorinated derivatives of the foregoing.  
   
   
       176 . A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid (SCF) and a metal precursor selected from the group consisting of Mo(CO) 6 , W(CO) 6 , Cr(CO) 6 , W(PF 3 ) 6 , CO 2 (CO) 8 , and CO 2 (PF 3 ) 8 .  
   
   
       177 . A method of forming a material on a substrate, comprising depositing the material on the substrate from a deposition composition comprising a supercritical fluid (SCF) and a siloxane in combination with one of an alkyl silane or a porogen.  
   
   
       178 . The method of  claim 177 , wherein the SCF is selected from the group consisting of carbon dioxide, oxygen, argon, krypton, xenon, ammonia, methane, ethane, methanol, ethanol, isopropanol, dimethyl ketone, sulfur hexafluoride, carbon monoxide, dinitrogen oxide, forming gas, hydrogen, and mixtures thereof.  
   
   
       179 . The method of  claim 177 , wherein the composition further comprises an additional component selected from the group consisting of co-solvents, surfactants, co-reactants, diluents, deposition-enhancing agents, and combinations thereof.  
   
   
       180 . The method of  claim 177 , wherein the alkylsilane comprises a species selected from the group consisting of trimethylsilane and tetramethylsilane.  
   
   
       181 . The method of  claim 177 , wherein the siloxane comprises a sub-species selected from the group consisting of alkylsiloxanes and cyclosiloxanes.