Manufacturing method of semiconductor device

Abstract

A semiconductor device in the form of a resin sealed semiconductor package is disclosed, wherein a gate terminal connected to a gate pad electrode formed on a surface of a semiconductor chip and a source terminal connected to a source pad electrode formed on the chip surface exposed to a back surface of a sealing resin portion, a first portion of a drain terminal connected to a back-surface drain electrode of the semiconductor chip is exposed to an upper surface of the sealing resin portion, and a second portion of the drain terminal formed integrally with the first portion of the drain terminal is exposed to the back surface of the sealing resin portion. When forming the sealing resin portion in such a semiconductor device, first the sealing resin portion is formed so as to also cover an upper surface of the first portion of the drain terminal and thereafter the upper surface side of the sealing resin portion is polished by liquid honing, thereby allowing the upper surface of the first portion of the drain terminal to be exposed on the upper surface of the sealing resin portion. Both heat dissipating property and production yield of the semiconductor device are improved.

1 . A method of manufacturing a semiconductor device comprising the steps of:
 (a) providing a semiconductor chip having a first main surface, a second main surface opposite to the first main surface, a first electrode disposed on the first main surface and a second electrode disposed on the second main surface;   (b) connecting a first conductor portion to the first electrode;   (c) connecting a second conductor portion to the second electrode;   (d) after the steps (b) and (c), forming a resin portion to cover the semiconductor chip, the first conductor portion and the second conductor portion; and   (e) after the step (d), spraying a liquid with an abrasive to an upper surface of the resin portion formed over the first conductor portion to polish a part of the resin portion,   wherein, after the step (e), an upper surface of the first conductor portion is exposed from the resin portion.   
     
     
         2 . A method of manufacturing a semiconductor device according to  claim 1 , wherein the semiconductor chip includes a MISFET;
 the first electrode is electrically connected to a drain of the MISFET; and   the second electrode is electrically connected to a source of the MISFET.   
     
     
         3 . A method of manufacturing a semiconductor device according to  claim 1 , wherein a lower surface of the second conductor portion is exposed from the resin portion. 
     
     
         4 . A method of manufacturing a semiconductor device according to  claim 1 , wherein, in the step (d), the semiconductor chip with the first and second conductor portions is set in a cavity of a mold; and
 resin is introduced into the cavity to form the resin portion.   
     
     
         5 . A method of manufacturing a semiconductor device according to  claim 1 , wherein the first and second conductor portions are comprised of copper. 
     
     
         6 . A method of manufacturing a semiconductor device according to  claim 1 , wherein, in the step (e), a water-alumina mixture is sprayed. 
     
     
         7 . A method of manufacturing a semiconductor device according to  claim 1 , wherein, in the step (e), the liquid with the abrasive is sprayed at a high pressure.