Method and composition for polishing a substrate

Abstract

Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. Polishing compositions are provided for removing at least a barrier material from a substrate surface by a chemical mechanical polishing process or by an electrochemical mechanical polishing process. The polishing compositions used in barrier removal may further be used after a process for electrochemical mechanical planarization process of a conductive material. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization type defects.

1 . A composition for removing at least a barrier material from a substrate surface, comprising:
 between about 1 wt. % and about 10 wt. % of an oxidizer;   between about 0.5 wt. % and about 5 wt. % of a chelating agent;   between about 0.0001 wt % and about 1 wt % of a polymeric stabilizer;   between about 0.3 wt % and about 10 wt % of abrasive particles;   a pH between about 1 and about 6; and   a solvent.   
   
   
       2 . The composition of  claim 1 , wherein:
 the oxidizer comprises a peroxide compound the chelating agent comprises a compound having a functional group selected from having one or more functional groups selected from the group consisting of carboxylic acid groups, amine groups, amide groups, and combinations thereof;   the polymeric stabilizer comprises a polyethylene derivative, a polyacrylic derivative, and combinations thereof;   the abrasive particles are selected from the group of alumina, silica, ceria, and combinations thereof; and   the solvent comprises water.   
   
   
       3 . The composition of  claim 2 , wherein the composition comprises:
 between about 1 wt. % and about 5 wt. % of hydrogen peroxide;   between about 0.5 wt. % and about 2 wt. % of a salt having one or more functional groups selected from the group consisting of carboxylic acid groups, amine groups, amide groups, and combinations thereof;   between about 0.01 wt % and about 1 wt % of a polyacrylic acid;   between about 0.3 wt % and about 5 wt % of alumina particles;   a pH between about 3 and about 6; and   water.   
   
   
       4 . The composition of  claim 3 , wherein the composition comprises:
 about 3 wt. % of hydrogen peroxide;   about 1 wt. % of ammonium citrate;   about 0.1 wt. % of polyacrylic acid;   about 4 wt % of alumina particles;   a pH between about 4 and about 5; and   a solvent.   
   
   
       5 . A composition for removing at least a barrier material from a substrate surface, comprising:
 an acid based electrolyte system;   one or more etching agents;   one or more etching inhibitors;   one or more activating agents;   one or more pH adjusting agents to provide a pH between about 2 and about 7; and   a solvent.   
   
   
       6 . The composition of  claim 5 , wherein the one or more etchant agents include a compound having one or more functional groups selected from the group consisting of amine groups, amide groups, carboxylate groups, dicarboxylate groups, tri-carboxylate groups, and combinations thereof. 
   
   
       7 . The composition of  claim 5 , wherein the one or more etching inhibitors are selected from the group consisting of polymethylacrylic acids, polycarboxylic acid, polyphosphate, and combinations thereof. 
   
   
       8 . The composition of  claim 5 , wherein the activating agents are selected from the group of iron compounds, aluminum compounds, hexafluorotitanium ([TiF 6 ] 2− ) salts, hexafluorosilicon ([SiF 6 ] 2− ), and combinations thereof.