AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE

Abstract

A low dislocation density Al x In y Ga 1-x-y N single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an Al x In y Ga 1-x-y N crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).

1 - 92 . (canceled) 
   
   
       93 . A method of growing an Al x Ga 1-x N (0≦x≦1) mixture crystal comprising the steps of:
 preparing an undersubstrate;   supplying the undersubstrate with GaCl prepared by blowing HCl gas to a Ga-melt as a Ga material, AlCl 3  gas as an Al material, and NH 3  gas as a nitrogen material;   growing a set (HZH) of a linear low dislocation single crystal region (Z) and two linear voluminous defect accumulating regions (H) including plenty of dislocations and being in contact with the low dislocation single crystal region (Z) on the undersubstrate;   attracting dislocations existing in the low dislocation single crystal region (Z) to the voluminous defect accumulating regions (H);   making use of a core (S) or an interface (K) of the voluminous defect accumulating regions (H) as an annihilation/accumulation place of dislocations; and   reducing dislocations in the low dislocation single crystal region (Z).   
   
   
       94 . A method of growing an Al x Ga 1-x N (0≦x≦1) mixture crystal comprising the steps of:
 preparing an undersubstrate;   supplying the undersubstrate with trimethylgallium (TMG) as a Ga material, trimethylaluminum (TMA) as an Al material and NH 3  gas as nitrogen material;   growing a set (HZH) of a linear low dislocation single crystal region (Z) and two linear voluminous defect accumulating regions (H) including plenty of dislocations and being in contact with the low dislocation single crystal region (Z) on the undersubstrate;   attracting dislocations existing in the low dislocation single crystal regions (Z) to the voluminous defect accumulating regions (H);   making use of a core (S) or an interface (K) of the voluminous defect accumulating regions (H) as an annihilation/accumulation place of dislocations; and   reducing dislocations in the low dislocation single crystal regions (Z).   
   
   
       95 . A method of growing an In y Ga 1-y N (0≦y≦1) mixture crystal comprising the steps of:
 preparing an undersubstrate;   supplying the undersubstrate with InCl 3  prepared by blowing HCl gas to an In-melt as an In material, GaCl prepared by blowing HCl to a Ga-melt as a Ga material, and NH 3  gas as a nitrogen material;   growing a set (HZH) of a linear low dislocation single crystal region (Z) and two linear voluminous defect accumulating regions (H) including plenty of dislocations and being in contact with the low dislocation single crystal region (Z) on the undersubstrate;   attracting dislocations existing in the low dislocation single crystal regions (Z) to the voluminous defect accumulating regions (H);   making use of a core (S) or an interface (K) of the voluminous defect accumulating regions (H) as an annihilation/accumulation place of dislocations; and   reducing dislocations in the low dislocation single crystal regions (Z).   
   
   
       96 . A method of growing an In y Ga 1-y N (0≦y≦1) mixture crystal comprising the steps of:
 preparing an undersubstrate;   supplying the undersubstrate with trimethylindium (TMI) as an indium material, trimethylgallium (TMG) as a gallium material and NH 3  gas as nitrogen material;   growing a set (HZH) of a linear low dislocation single crystal region (Z) and two linear voluminous defect accumulating regions (H) including plenty of dislocations and being in contact with the low dislocation single crystal region (Z) on the undersubstrate;   attracting dislocations existing in the low dislocation single crystal regions (Z) to the voluminous defect accumulating regions (H);   making use of a core (S) or an interface (K) of the voluminous defect accumulating regions (H) as an annihilation/accumulation place of dislocations; and   reducing dislocations in the low dislocation single crystal regions (Z).