Inventor · disambiguated record
Takuji Okahisa
Also filed as: OKAHISA TAKUJI
47 granted patents·16 pending applications·1,826 citations·filing 1996–2022
98Inventor score
Top patents by PatentIndex Score
63 records- 0199US7390359B2Nitride semiconductor waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jun 24, 2008·276 cites·6 claims
- 0299US7303630B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Dec 4, 2007·291 cites·42 claims
- 0398US6468882B2Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Oct 22, 2002·197 cites·21 claims
- 0497US6693021B1GaN single crystal substrate and method of making the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Feb 17, 2004·116 cites·12 claims
- 0597US6468347B1Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Oct 22, 2002·217 cites·51 claims
- 0696US8404042B2Group-III nitride crystal compositeMIZUHARA NAHO·Filed 2012·Granted Mar 26, 2013·28 cites·20 claims
- 0796US7655960B2A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing sameSUMITO ELECTRIC IND LTD·Filed 2006·Granted Feb 2, 2010·78 cites·3 claims
- 0896US7473315B2AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Jan 6, 2009·23 cites·92 claims
- 0996US7105865B2AlxInyGa1−x−yN mixture crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Sep 12, 2006·50 cites·29 claims
- 1096US6413627B1GaN single crystal substrate and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Jul 2, 2002·261 cites·14 claims
- 1195US6667184B2Single crystal GaN substrate, method of growing same and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Dec 23, 2003·74 cites·42 claims
- 1294US7589000B2Fabrication method and fabrication apparatus of group III nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Sep 15, 2009·20 cites·4 claims
- 1391US8258051B2Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystalMIZUHARA NAHO·Filed 2009·Granted Sep 4, 2012·14 cites·8 claims
- 1488US7531889B2Epitaxial substrate and semiconductor elementSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted May 12, 2009·16 cites·28 claims
- 1586US7481881B2Method of manufacturing GaN crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Jan 27, 2009·9 cites·2 claims
- 1686US7112826B2Single crystal GaN substrate semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Sep 26, 2006·29 cites·30 claims
- 1782US8872309B2Composite of III-nitride crystal on laterally stacked substratesSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 28, 2014·3 cites·3 claims
- 1882US7691732B2Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Apr 6, 2010·8 cites·8 claims
- 1981US8709923B2Method of manufacturing III-nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 29, 2014·3 cites·6 claims
- 2081US7087114B2Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Aug 8, 2006·17 cites·92 claims
- 2179US8421190B2Group III nitride semiconductor substrate and manufacturing method thereofOKAHISA TAKUJI·Filed 2010·Granted Apr 16, 2013·4 cites·7 claims
- 2279US8198177B2AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing sameNAKAHATA SEIJI·Filed 2011·Granted Jun 12, 2012·3 cites·1 claims
- 2379US7858502B2Fabrication method and fabrication apparatus of group III nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Dec 28, 2010·4 cites·6 claims
- 2477US11692264B2Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Jul 4, 2023·0 cites·2 claims
- 2577US10822693B2Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Nov 3, 2020·1 cites·12 claims
- 2676US7794543B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Sep 14, 2010·3 cites·8 claims
- 2773US7504323B2GaN single crystal substrate and method of making the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Mar 17, 2009·10 cites·16 claims
- 2871US11359275B2Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Jun 14, 2022·0 cites·2 claims
- 2971US7723142B2Growth method of GaN crystal, and GaN crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted May 25, 2010·3 cites·6 claims
- 3071US7534310B2Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted May 19, 2009·2 cites·49 claims
- 3169US7357837B2GaN single crystal substrate and method of making the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Apr 15, 2008·8 cites·8 claims
- 3269US7354477B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Apr 8, 2008·7 cites·43 claims
- 3367US8404569B2Fabrication method and fabrication apparatus of group III nitride crystal substanceKASAI HITOSHI·Filed 2010·Granted Mar 26, 2013·1 cites·8 claims
- 3467US8147612B2Method for manufacturing gallium nitride crystal and gallium nitride waferUEMURA TOMOKI·Filed 2007·Granted Apr 3, 2012·3 cites·40 claims
- 3567US7351347B2Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Apr 1, 2008·10 cites·6 claims
- 3666US9064706B2Composite of III-nitride crystal on laterally stacked substratesSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 23, 2015·1 cites·4 claims
- 3766US8574364B2GaN-crystal free-standing substrate and method for producing the sameFUJIWARA SHINSUKE·Filed 2011·Granted Nov 5, 2013·1 cites·4 claims
- 3864US8067300B2AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing sameNAKAHATA SEIJI·Filed 2009·Granted Nov 29, 2011·1 cites·39 claims
- 3960US8698282B2Group III nitride semiconductor crystal substrate and semiconductor deviceOKAHISA TAKUJI·Filed 2008·Granted Apr 15, 2014·0 cites·12 claims
- 4059US5970314AProcess for vapor phase epitaxy of compound semiconductorSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Oct 19, 1999·23 cites·6 claims
- 4159US2009263955A1GaN single crystal substrate and method of making the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 4257US2009071394A1AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATESUMITOMO ELECTRONIC IND LTD·Filed 2008·Application pending·0 cites
- 4356US7521339B2GaN single crystal substrate and method of making the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Apr 21, 2009·0 cites·4 claims
- 4456US2010164070A1Group III Nitride Semiconductor Crystal Substrate and Semiconductor DeviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 4555US9153742B2GaN-crystal free-standing substrate and method for producing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Oct 6, 2015·0 cites·4 claims
- 4655US2013244406A1Fabrication method and fabrication apparatus of group iii nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 4755US2009101063A1Method of Manufacturing GaN Crystal SubstrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 4854US10487395B2Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Nov 26, 2019·0 cites·6 claims
- 4950US8845992B2III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrateOKAHISA TAKUJI·Filed 2008·Granted Sep 30, 2014·0 cites·5 claims
- 5049US7943964B2AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted May 17, 2011·0 cites·8 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →