Fabrication method and fabrication apparatus of group iii nitride crystal substance

Abstract

A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

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         6 . A fabrication method of a group III nitride crystal substance, comprising the step of cleaning an interior of a reaction chamber by introducing HCl gas into said reaction chamber, and the step of vapor deposition of a group III nitride crystal substance with trapping ammonium chloride powder generated as a by-product in a trap device attached on said cleaned reaction chamber.