Inventor · disambiguated record
Ryu Hirota
Also filed as: HIROTA RYU
37 granted patents·10 pending applications·759 citations·filing 1997–2019
98Inventor score
Top patents by PatentIndex Score
47 records- 0199US7303630B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Dec 4, 2007·291 cites·42 claims
- 0296US7655960B2A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing sameSUMITO ELECTRIC IND LTD·Filed 2006·Granted Feb 2, 2010·78 cites·3 claims
- 0396US7473315B2AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Jan 6, 2009·23 cites·92 claims
- 0496US7105865B2AlxInyGa1−x−yN mixture crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Sep 12, 2006·50 cites·29 claims
- 0595US7772585B2Nitride semiconductor substrate and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Aug 10, 2010·24 cites·23 claims
- 0695US6667184B2Single crystal GaN substrate, method of growing same and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Dec 23, 2003·74 cites·42 claims
- 0794US7589000B2Fabrication method and fabrication apparatus of group III nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Sep 15, 2009·20 cites·4 claims
- 0891US7771532B2Nitride semiconductor substrate and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Aug 10, 2010·14 cites·28 claims
- 0989US10458043B2Gallium nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Oct 29, 2019·2 cites·6 claims
- 1087US6475277B1Group III-V nitride semiconductor growth method and vapor phase growth apparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Nov 5, 2002·38 cites·13 claims
- 1186US7998847B2III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Aug 16, 2011·9 cites·9 claims
- 1286US7112826B2Single crystal GaN substrate semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Sep 26, 2006·29 cites·30 claims
- 1385US7905958B2Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Mar 15, 2011·10 cites·8 claims
- 1481US7129525B2Semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Oct 31, 2006·7 cites·25 claims
- 1581US7087114B2Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Aug 8, 2006·17 cites·92 claims
- 1679US8198177B2AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing sameNAKAHATA SEIJI·Filed 2011·Granted Jun 12, 2012·3 cites·1 claims
- 1779US7858502B2Fabrication method and fabrication apparatus of group III nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Dec 28, 2010·4 cites·6 claims
- 1879US7485484B2Group III-V crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Feb 3, 2009·4 cites·6 claims
- 1978US8002892B2Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Aug 23, 2011·6 cites·2 claims
- 2076US8310030B2III-nitride crystal substrate and III-nitride semiconductor deviceHIROTA RYU·Filed 2011·Granted Nov 13, 2012·4 cites·10 claims
- 2176US7892513B2Group III nitride crystal and method of its growthSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Feb 22, 2011·2 cites·14 claims
- 2276US7794543B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Sep 14, 2010·3 cites·8 claims
- 2375US10837124B2Gallium nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Nov 17, 2020·0 cites·5 claims
- 2474US8134223B2III-V compound crystal and semiconductor electronic circuit elementNAKAHATA SEIJI·Filed 2009·Granted Mar 13, 2012·3 cites·4 claims
- 2572US8304334B2III-V compound crystal and semiconductor electronic circuit elementNAKAHATA SEIJI·Filed 2012·Granted Nov 6, 2012·2 cites·5 claims
- 2672US7297625B2Group III-V crystal and manufacturing method thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Nov 20, 2007·10 cites·14 claims
- 2771US7534310B2Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted May 19, 2009·2 cites·49 claims
- 2869US7354477B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Apr 8, 2008·7 cites·43 claims
- 2967US8404569B2Fabrication method and fabrication apparatus of group III nitride crystal substanceKASAI HITOSHI·Filed 2010·Granted Mar 26, 2013·1 cites·8 claims
- 3064US8067300B2AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing sameNAKAHATA SEIJI·Filed 2009·Granted Nov 29, 2011·1 cites·39 claims
- 3158US10443151B2Gallium nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Oct 15, 2019·0 cites·9 claims
- 3257US2009071394A1AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATESUMITOMO ELECTRONIC IND LTD·Filed 2008·Application pending·0 cites
- 3357US2008299748A1Group III-V CrystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 3456US7288151B2Method of manufacturing group-III nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Oct 30, 2007·2 cites·9 claims
- 3555US2013244406A1Fabrication method and fabrication apparatus of group iii nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 3652US10006147B2Gallium nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jun 26, 2018·0 cites·9 claims
- 3750US2010229786A1Method for Growing Group III Nitride CrystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 3849US5933751AMethod for the heat treatment of II-VI semiconductorsSUMITOMO ELECTRIC INDUSTRIES·Filed 1998·Granted Aug 3, 1999·14 cites·14 claims
- 3949US2008006201A1Method of growing gallium nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 4045US2007280872A1Method of growing gallium nitride crystal and gallium nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 4143US8038794B2Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Oct 18, 2011·0 cites·6 claims
- 4243US2005098090A1Group III Nitride Crystal, Method of Its Manufacture, and Equipment for Manufacturing Group III Nitride CrystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Application pending·0 cites
- 4341US2007296061A1Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor DeviceSASAKI TAKATOMO·Filed 2005·Application pending·0 cites
- 4441US2009032907A1Method for Producing GaxIn1-xN(0<x>) Crystal Gaxin1-xn(0<x<1) Crystalline Substrate, Method for Producing GaN Crystal, GaN Crystalline Substrate, and ProductUEMURA TOMOKI·Filed 2006·Application pending·0 cites
- 4539US2006012011A1Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such methodNAKAHATA SEIJI·Filed 2004·Application pending·0 cites
- 4638US6132506AMethod for the heat treatment of ZnSe crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Oct 17, 2000·3 cites·5 claims
- 4735US5944891AMethod for the heat treatment of ZnSe crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Aug 31, 1999·2 cites·5 claims
Join the waitlist — get patent alerts
Get an alert when Ryu Hirota files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →