Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer

Abstract

Embodiments of a silicon-on-insulator (SOI) wafer having an etch stop layer overlying the buried oxide layer, as well as embodiments of a method of making the same, are disclosed. The etch stop layer may comprise silicon nitride, nitrogen-doped silicon dioxide, or silicon oxynitride, as well as some combination of these materials. Other embodiments are described and claimed.

1 - 26 . (canceled) 
   
   
       27 . A semiconductor wafer comprising:
 a base layer comprised of a semiconductor material;   a layer of an insulating material overlying the base layer;   an etch stop layer overlying the insulating layer; and   an upper layer comprised of the semiconductor material overlying the etch stop layer.   
   
   
       28 . The wafer of  claim 27 , wherein the semiconductor material comprises silicon and the insulating material comprises silicon dioxide. 
   
   
       29 . The wafer of  claim 27 , wherein the etch stop layer comprises a material selected from a group consisting of silicon nitride, nitrogen-doped silicon dioxide, and silicon oxynitride. 
   
   
       30 . The wafer of  claim 27 , wherein the etch stop layer comprises at least two materials selected from a group consisting of silicon nitride, nitrogen-doped silicon dioxide, and silicon oxynitride. 
   
   
       31 - 40 . (canceled)