Rf grounding of cathode in process chamber
Abstract
An apparatus for providing a short return current path for RF current between a process chamber wall and a substrate support is provided. The RF grounding apparatus, which is RF grounded and is place above the substrate transfer port, establishes electrical contact with the substrate support only during substrate processing, such as deposition, to provide return current path for the RF current. One embodiment of the RF grounding apparatus comprises one or more low impedance flexible curtains, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Another embodiment of the RF grounding apparatus comprises a plurality of low impedance flexible straps, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Yet another embodiment of the RF grounding apparatus comprises a plurality of probes, which either are electrically connected to the grounded chamber wall or are grounded by other means, and actuators accompanying the probes. The actuators move the probes to make electrical contact with the substrate support during substrate processing.
Claims
exact text as granted — not AI-modified1 . An apparatus, comprising:
a chamber body having a substrate transport port through a chamber wall; an RF grounding assembly coupled to the chamber wall above the substrate transport port; and a substrate support disposed in the chamber body and movable between a first position spaced from the RF grounding assembly and a second position in contact with the RF grounding assembly.
2 . The apparatus of claim 1 , wherein the substrate support comprises one or more pick-up ledges.
3 . The apparatus of claim 2 , further comprising:
one or more RF ground paths coupled to the bottom of the substrate support and to the bottom of the chamber body.
4 . The apparatus of claim 3 , wherein the apparatus is a plasma enhanced chemical vapor deposition apparatus.
5 . The apparatus of claim 4 , further comprising a shadow frame.
6 . The apparatus of claim 5 , wherein the shadow frame is movable from a third position spaced from the substrate support when the substrate support is in the first position and a fourth position in contact with the substrate support when the substrate support is in the second position.
7 . The apparatus of claim 6 , wherein the shadow frame is coupled to the RF grounding assembly when the shadow frame is in the third position.
8 . The apparatus of claim 1 , further comprising:
one or more RF ground paths coupled to the bottom of the substrate support and to the bottom of the chamber body.
9 . The apparatus of claim 8 , wherein the apparatus is a plasma enhanced chemical vapor deposition apparatus.
10 . The apparatus of claim 9 , further comprising a shadow frame.
11 . The apparatus of claim 10 , wherein the shadow frame is movable from a third position spaced from the substrate support when the substrate support is in the first position and a fourth position in contact with the substrate support when the substrate support is in the second position.
12 . The apparatus of claim 11 , wherein the shadow frame is coupled to the RF grounding assembly when the shadow frame is in the third position.
13 . The apparatus of claim 1 , wherein the apparatus is a plasma enhanced chemical vapor deposition apparatus.
14 . The apparatus of claim 13 , further comprising a shadow frame.
15 . The apparatus of claim 14 , wherein the shadow frame is movable from a third position spaced from the substrate support when the substrate support is in the first position and a fourth position in contact with the substrate support when the substrate support is in the second position.
16 . The apparatus of claim 15 , wherein the shadow frame is coupled to the RF grounding assembly when the shadow frame is in the third position.
17 . The apparatus of claim 1 , further comprising a shadow frame.
18 . The apparatus of claim 17 , wherein the shadow frame is movable from a third position spaced from the substrate support when the substrate support is in the first position and a fourth position in contact with the substrate support when the substrate support is in the second position.
19 . The apparatus of claim 18 , wherein the shadow frame is coupled to the RF grounding assembly when the shadow frame is in the third position.
20 . The apparatus of claim 19 , wherein the substrate support has a plurality of holes therethrough that accept a plurality of lift pins.Join the waitlist — get patent alerts
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