Mounting stage and plasma processing apparatus

Abstract

A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: δ/ z ≧85 where δ=(ρ v /(μπf)) 1/2 where z is the thickness of the electrode film, δ is the skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is the frequency of the radio-frequency electrical power, π is the ratio of a circumference of a circle to its diameter, μ is the magnetic permeability of the electrode film, and ρ v is the specific resistance of the electrode film.

1 . A mounting stage for a plasma processing apparatus on which a substrate is mounted, comprising:
 a conductor member connected to a radio-frequency power source for producing plasma;   a dielectric layer buried in a central portion of an upper surface of said conductor member; and   an electrostatic chuck mounted on said dielectric layer,   wherein said electrostatic chuck is connected to a high-voltage direct current power source and comprises an electrode film that satisfies the following condition:
   δ/ z≧ 85 
   where δ=(ρ v /(μπf)) 1/2      where z is a thickness of the electrode film, δ is a skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is a frequency of the radio-frequency electrical power supplied from the radio-frequency power source, π is a ratio of a circumference of a circle to its diameter, μ is a magnetic permeability of the electrode film, and ρ v  is a specific resistance of the electrode film.   
   
   
       2 . A mounting stage for a plasma processing apparatus on which a substrate is mounted, comprising:
 a conductor member connected to a radio-frequency power source for attracting ions;   a dielectric layer buried in a central portion of an upper surface of said conductor member; and   an electrostatic chuck mounted on said dielectric layer,   wherein said electrostatic chuck is connected to a high-voltage direct current power source and comprises an electrode film that satisfies the following condition:
   ρ s ≦2.67×10 5 Ω/□ 
   
     where ρ s  is a surface resistivity of the electrode film. 
   
   
       3 . A mounting stage for a plasma processing apparatus on which a substrate is mounted, comprising:
 a conductor member connected to a radio-frequency power source for producing plasma and a radio-frequency power source for attracting ions;   a dielectric layer buried in a central portion of an upper surface of said conductor member; and   an electrostatic chuck mounted on said dielectric layer,   wherein said electrostatic chuck is connected to a high-voltage direct current power source and comprises an electrode film that satisfies the following conditions:
   δ/ z≧ 85 and ρ 5 ≦2.67×10 5 Ω/□ 
   where δ=(ρ v /μπf)) 1/2      where z is a thickness of the electrode film, δ is a skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source for producing plasma, f is a frequency of the radio-frequency electrical power supplied from the radio-frequency power source for producing plasma, π is a ratio of a circumference of a circle to its diameter, μ is a magnetic permeability of the electrode film, ρ v  is a specific resistance of the electrode film, and ρ s  is a surface resistivity of the electrode film.   
   
   
       4 . A mounting stage for a plasma processing apparatus on which a substrate is mounted, comprising:
 a conductor member connected to a radio-frequency power source for producing plasma and a radio-frequency power source for attracting ions;   a dielectric layer buried in a central portion of an upper surface of said conductor member; and   an electrostatic chuck mounted on said dielectric layer,   wherein said electrostatic chuck is connected to a high-voltage direct current power source and comprises an electrode film that satisfies the following conditions:
   115 Ω/□≦ρ s ≦2.67×10 5 Ω/□ 
   
     where ρ s  is a surface resistivity of the electrode film. 
   
   
       5 . A mounting stage for a plasma processing apparatus as claimed in  claim 2 , wherein the surface resistivity ρ s  is not more than 304Ω/□. 
   
   
       6 . A mounting stage for a plasma processing apparatus as claimed in  claim 1 , wherein the electrode film is formed by one of thermal spraying, sintering and coating, and the specific resistance of the electrode film is 1.0×10 −2  Ω·cm to 1.0×10 3  Ω·cm. 
   
   
       7 . A mounting stage for a plasma processing apparatus as claimed in  claim 1 , wherein the electrode film is formed by one of CVD, PVD, and liquid deposition, a thickness of the electrode film is not more than 10 μm, and the specific resistance of the electrode film is not more than 1.0×10 2  Ω·cm. 
   
   
       8 . A mounting stage for a plasma processing apparatus as claimed in  claim 1 , wherein a frequency of radio-frequency electrical power supplied from the radio-frequency power source for producing plasma is not less than 27 MHz. 
   
   
       9 . A mounting stage for a plasma processing apparatus as claimed in  claim 2 , wherein a frequency of radio-frequency electrical power supplied from the radio-frequency power source for attracting ions is not more than 27 MHz. 
   
   
       10 . A plasma processing apparatus comprising:
 a mounting stage on which a substrate is mounted,   wherein said mounting stage comprises a conductor member connected to a radio-frequency power source for producing plasma, a dielectric layer buried in a central portion of an upper surface of the conductor member, and an electrostatic chuck mounted on the dielectric layer,   the electrostatic chuck has an electrode film connected to a high-voltage direct current power source, and   the substrate satisfies the following condition:
   δ w   /z   w ≧13 
   where δ w =(ρ vw /(μ w πf)) 1/2      where z w  is a thickness of the substrate, δ w  is a skin depth of the substrate with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is a frequency of the radio-frequency electrical power supplied from the radio-frequency power source, π is a ratio of a circumference of a circle to its diameter, μ w  is a magnetic permeability of the substrate, and ρ vw  is a specific resistance of the substrate.   
   
   
       11 . A plasma processing apparatus comprising:
 a mounting stage on which a substrate is mounted,   wherein said mounting stage comprises a conductor member connected to a radio-frequency power source for producing plasma, a dielectric layer buried in a central portion of an upper surface of the conductor member, and an electrostatic chuck mounted on the dielectric layer,   the electrostatic chuck has an electrode film connected to a high-voltage direct current power source, and   the substrate satisfies the following condition:
   ρ sw ≧52Ω/□ 
   
     where ρ sw  is a surface resistivity of the substrate. 
   
   
       12 . A plasma processing apparatus comprising:
 a mounting stage on which a substrate is mounted,   wherein said mounting stage comprises a conductor member connected to a radio-frequency power source for producing plasma, a dielectric layer buried in a central portion of an upper surface of the conductor member, and an electrostatic chuck mounted on the dielectric layer,   the electrostatic chuck has an electrode film connected to a high-voltage direct current power source, and   the substrate satisfies the following condition:
   ρ vw ≧4 Ω·cm 
   
     where ρ vw  is a specific resistance of the substrate. 
   
   
       13 . A plasma processing apparatus comprising:
 a mounting stage on which a substrate is mounted,   wherein said mounting stage comprises a conductor member connected to a radio-frequency power source for producing plasma, a dielectric layer buried in a central portion of an upper surface of the conductor member, and an electrostatic chuck mounted on the dielectric layer,   the electrostatic chuck has an electrode film connected to a high-voltage direct current power source, and   a wiring film on the substrate satisfies the following condition:
   δ 1   /z   1 ≧13 
   where δ 1 =(ρ v1 /(μ 1 πf)) 1/2      where z 1  is a thickness of the wiring film, δ 1  is a skin depth of the wiring film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is a frequency of the radio-frequency electrical power supplied from the radio-frequency power source, π is a ratio of a circumference of a circle to its diameter, μ 1  is a magnetic permeability of the wiring film, and ρ v1  is a specific resistance of the wiring film.   
   
   
       14 . A plasma processing apparatus comprising:
 a mounting stage on which a substrate is mounted,   wherein said mounting stage comprises a conductor member connected to a radio-frequency power source for producing plasma, a dielectric layer buried in a central portion of an upper surface of the conductor member, and an electrostatic chuck mounted on the dielectric layer,   the electrostatic chuck has an electrode film connected to a high-voltage direct current power source, and   a wiring film on the substrate satisfies the following condition:
   ρ s1 ≧52 Ω/□ 
   
     where ρ s1  is a surface resistivity of the wiring film. 
   
   
       15 . A plasma processing apparatus comprising:
 a mounting stage on which a substrate is mounted,   wherein said mounting stage comprises a conductor member connected to a radio-frequency power source for producing plasma, a dielectric layer buried in a central portion of an upper surface of the conductor member, and an electrostatic chuck mounted on the dielectric layer,   the electrostatic chuck is connected to a high-voltage direct current power source and has an electrode film that satisfies the following condition:
   δ/ z≧ 85 
   where δ=(ρ v /(μπf)) 1/2      where z is a thickness of the electrode film, δ is a skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is a frequency of the radio-frequency electrical power supplied from the radio-frequency power source, π is a ratio of a circumference of a circle to its diameter, μ is a magnetic permeability of the electrode film, and ρ v  is a specific resistance of the electrode film.   
   
   
       16 . A plasma processing apparatus comprising:
 a mounting stage on which a substrate is mounted,   wherein said mounting stage comprises a conductor member connected to a radio-frequency power source for attracting ions, a dielectric layer buried in a central portion of an upper surface of the conductor member, and an electrostatic chuck mounted on the dielectric layer,   the electrostatic chuck is connected to a high-voltage direct current power source and has an electrode film that satisfies the following condition:
   ρ s ≦2.67×10 5 Ω/□ 
   
     where ρ s  is a surface resistivity of the electrode film. 
   
   
       17 . A plasma processing apparatus comprising:
 a mounting stage on which a substrate is mounted,   wherein said mounting stage comprises a conductor member connected to a radio-frequency power source for producing plasma and a radio-frequency power source for attracting ions, a dielectric layer buried In a central portion of an upper surface of the conductor member, and an electrostatic chuck mounted on the dielectric layer,   the electrostatic chuck is connected to a high-voltage direct current power source and has an electrode film that satisfies the following conditions:
   δ/ z≧ 85 and ρ s ≦2.67×10 5 Ω/□ 
   where δ=(ρ v /(μπf)) 1/2      where z is a thickness of the electrode film, δ is a skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source for producing plasma, f is a frequency of the radio-frequency electrical power supplied from the radio-frequency power source for producing plasma, π is a ratio of a circumference of a circle to its diameter, μ is a magnetic permeability of the electrode film, ρ v  is a specific resistance of the electrode film, and ρ s  is a surface resistivity of the electrode film.   
   
   
       18 . A plasma processing apparatus comprising:
 a mounting stage on which a substrate is mounted,   wherein said mounting stage comprises a conductor member connected to a radio-frequency power source for producing plasma and a radio-frequency power source for attracting ions, a dielectric layer buried in a central portion of an upper surface of the conductor member, and an electrostatic chuck mounted on the dielectric layer,   the electrostatic chuck is connected to a high-voltage direct current power source and has an electrode film that satisfies the following condition:
   115Ω/□≦ρ s ≦2.67×10 5 Ω/□ 
   
     where ρ s  is a surface resistivity of the electrode film. 
   
   
       19 . A mounting stage for a plasma processing apparatus on which a substrate is mounted, comprising:
 a conductor member connected to a radio-frequency power source;   a dielectric layer buried in a central portion of an upper surface of said conductor member; and   an electrostatic chuck mounted on said dielectric layer,   wherein said electrostatic chuck is connected to a high-voltage direct current power source and includes an electrode film for which at least one of an upper limit value and a lower limit value of a surface resistivity is set, and   the electrode film is formed on an upper surface or a lower surface of a plate-shaped base material comprising a dielectric member prepared/formed in advance, and coated with an insulating material after the electrode film is formed.   
   
   
       20 . A mounting stage for a plasma processing apparatus as claimed in  claim 19 , wherein the electrode film is formed by thermal spraying, coating, thin-film formation, and attachment of a conductive film. 
   
   
       21 . A mounting stage for a plasma processing apparatus as claimed in  claim 20 , wherein the thin-film formation is one of CVD, PVD, and liquid deposition. 
   
   
       22 . A mounting stage for a plasma processing apparatus as claimed in  claim 19 , wherein the insulating material is formed by one of sintering, thermal spraying, and attachment of an insulating film. 
   
   
       23 . A mounting stage for a plasma processing apparatus on which a substrate is mounted, comprising:
 a conductor member connected to a radio-frequency power source;   a dielectric layer buried in a central portion of an upper surface of said conductor member; and   an electrostatic chuck mounted on said dielectric layer,   wherein said electrostatic chuck is connected to a high-voltage direct current power source, includes an electrode film for which at least one of an upper limit value and a lower limit value of a surface resistivity is set, and further has at least two conductive members having one end thereof being in contact with the electrode film and the other end thereof being exposed from a surface of said electrostatic chuck.   
   
   
       24 . A mounting stage for a plasma processing apparatus as claimed in  claim 23 , wherein at least one of the two conductive members is disposed in a central portion of said electrostatic chuck. 
   
   
       25 . A plasma processing apparatus comprising:
 a mounting stage on which a substrate is mounted,   wherein said mounting stage comprises a conductor member connected to a radio-frequency power source, a dielectric layer buried in a central portion of an upper surface of the conductor member, and an electrostatic chuck mounted on the dielectric layer,   the electrostatic chuck is connected to a high-voltage direct current power source and includes an electrode film for which at least one of an upper limit value and a lower limit value of a surface resistivity is set, and   the electrode film is formed on an upper surface or a lower surface of a plate-shaped base material comprising a dielectric member prepared/formed in advance, and coated with an insulating material after the electrode film is formed.   
   
   
       26 . A plasma processing apparatus comprising:
 a mounting stage on which a substrate is mounted,   wherein said mounting stage comprises a conductor member connected to a radio-frequency power source, a dielectric layer buried in a control portion of an upper surface of the conductor member, and an electrostatic chuck mounted on the dielectric layer,   the electrostatic chuck is connected to a high-power direct current power source and includes an electrode film for which at least one of an upper limit value and a lower limit value of a surface resistivity is set, and further has at least two conductive members having one end thereof being in contact with the electrode film and the other end thereof exposed from a surface of the electrostatic chuck.   
   
   
       27 . A plasma processing apparatus comprising:
 a mounting stage for the plasma processing apparatus as claimed in  claim 1 ,   wherein the substrate mounted on said mounting stage satisfies the following condition:
   δ w   /z   w ≧13 
   where δ w =(ρ vw /(μ w πf)) 1/2      where z w  is a thickness of the substrate, δ w  is a skin depth of the substrate with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is a frequency of the radio-frequency electrical power supplied from the radio-frequency power source, π is a ratio of a circumference of a circle to its diameter, μ w  is a magnetic permeability of the substrate, and ρ vw  is a specific resistance of the substrate.   
   
   
       28 . A plasma processing apparatus comprising:
 a mounting stage for the plasma processing apparatus as claimed in  claim 1 ,   wherein the substrate mounted on said mounting stage satisfies the following condition:
   ρ sw ≧52 Ω/□ 
   
     where ρ sw  is a surface resistivity of the substrate. 
   
   
       29 . A plasma processing apparatus comprising:
 a mounting stage for the plasma processing apparatus as claimed in  claim 1 ,   wherein the substrate mounted on said mounting stage satisfies the following condition:
   ρ vw ≧4 Ω·cm 
   
     where ρ vw  is a specific resistance of the substrate. 
   
   
       30 . A plasma processing apparatus comprising:
 a mounting stage for the plasma processing apparatus as claimed in  claim 1 ,   wherein a wiring film on the substrate mounted on said mounting stage satisfies the following condition:
   δ 1   /z   1 ≧13 
   where δ 1 =(ρ v1 /(μ 1 πf)) 1/2      where z 1  is a thickness of the wiring film, δ 1  is a skin depth of the wiring film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is a frequency of the radio-frequency electrical power supplied from the radio-frequency power source, π is a ratio of a circumference of a circle to its diameter, μ 1  is a magnetic permeability of the wiring film, and ρ v1  is a specific resistance of the wiring film.   
   
   
       31 . A plasma processing apparatus comprising:
 a mounting stage for the plasma processing apparatus as claimed in  claim 1 ,   wherein a wiring film on the substrate mounted on said mounting stage satisfies the following condition:
   ρ s1 ≧52 Ω/□ 
   
     where ρ s1  is a surface resistivity of the wiring film.